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  • 1
    Electronic Resource
    Electronic Resource
    Redistribution of Zn in GaAs-AlGaAs heterojunction bipolar transistor structures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1251-1253 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The redistribution of Zn in the base region of GaAs-AlGaAs heterojunction bipolar transistor structures during growth by organometallic vapor phase epitaxy has been examined with respect to the presence of Si doping in the emitter-contact, emitter, and collector/subcollector layers, and as a function of Zn doping concentration and Si counterdoping level in the p+ base. For a growth temperature of 675 °C the Zn shows no significant redistribution up to concentrations of 3×1019 cm−3 without Si doping. The addition of Si to the adjacent AlGaAs emitter and collector/subcollector layers causes substantial diffusion of Zn from the base, while Si doping of the GaAs emitter contact results in even greater Zn redistribution. Under these conditions, the Zn concentration in the base attains a maximum value of ∼7×1018 cm−3. Silicon counterdoping in the base region retards the Zn diffusion, while strain introduced by an InGaAs cap layer has no effect on the Zn redistribution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102528
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  • 2
    Electronic Resource
    Electronic Resource
    Role of vanadium in organometallic vapor phase epitaxy grown GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1772-1774 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and photoluminescent properties of vanadium incorporated into GaAs epitaxial layers from a VO(OC2H5)3 source during organometallic vapor phase epitaxy were examined. The vanadium concentration in the GaAs was controllably varied from 1016 to 1018 atoms cm−3. Deep level transient spectroscopy showed the presence of an electron trap at Ec−0.15 eV which increased in concentration with vanadium content of the epitaxial layers. A maximum value of 8×1015 cm−3 for this trap was obtained. There were no midgap electron traps associated with vanadium. In intentionally Si-doped epitaxial layers, co-doping with vanadium was observed to have no effect in reducing the carrier density when the Si concentration was ≥4×1016 cm−3. The net carrier concentration profiles resulting from 29Si implantation into GaAs containing 1018 cm−3 of total V had sharper tails than for similar implantation into undoped material, indicating the presence of less than 1016 cm−3 V-related acceptors. Photoluminescent spectra exhibited the characteristic V+3 intracenter emission at 0.65–0.75 eV. No other deep level photoluminescence was detected. For a V concentration of 1016 cm−3 only 2.5×1013 cm−3 was electrically active. Over the entire V concentration investigated this impurity was predominantly (≥99%) inactive.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101287
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectors (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4429-4443 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a detailed and thorough study of a wide variety of quantum well infrared photodetectors (QWIPs), which were chosen to have large differences in their optical and transport properties. Both n- and p-doped QWIPs, as well as intersubband transitions based on photoexcitation from bound-to-bound, bound-to-quasicontinuum, and bound-to-continuum quantum well states were investigated. The measurements and theoretical analysis included optical absorption, responsivity, dark current, current noise, optical gain, hot carrier mean free path, net quantum efficiency, quantum well escape probability, quantum well escape time, as well as detectivity. These results allow a better understanding of the optical and transport physics and thus a better optimization of the QWIP performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352210
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  • 4
    Electronic Resource
    Electronic Resource
    Carbon implantation in InP (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2014-2016 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon implanted into InP at doses between 5×1012 and 5×1014 cm−2, either by itself or with B, Ga, Al, or P coimplantation at room temperature or 200 °C, displays donor activity for all annealing temperatures (600–900 °C; 10 s). Phosphorus coimplantation enhances the donor activation percentage over carbon-only implantation, while coimplants of B, Ga, and Al reduce the donor activity. Peak carrier concentrations of 3×1019 cm−3 were obtained for C+P implantation at a dose of 5×1014 cm−2, followed by annealing at 700 °C for 10 s. Annealing at 〉700 °C leads to a reduction in net donor density through carbon site switching to produce self-compensation. The C diffusivity is estimated to be less than 2.5×10−14 cm−2 s−1 at 800 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102276
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  • 5
    Electronic Resource
    Electronic Resource
    Damage-induced high-resistivity regions in Al0.48In0.52As (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1786-1788 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sheet resistivity of oxygen-implanted n+-Al0.48In0.52As grown on InP was measured as a function of oxygen ion dose and post-implant annealing temperature. The sheet resistivity is 〉105 Ω/(D'Alembertian) after implantation for doses in the range 1012–8×1013 cm−2, and increases to 〉107 Ω/(D'Alembertian) after annealing at 500 °C. Temperature-dependent Hall measurements show that the resistivity of this compensated AlInAs has a thermal activation energy of 0.68 eV. Above 600 °C the damage-related compensation is removed and the material is returned to its original resistivity. We find no thermally stable, oxygen-related deep acceptors in AlInAs, in contrast to the results for AlGaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102173
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  • 6
    Electronic Resource
    Electronic Resource
    Zinc delta doping of GaAs by organometallic vapor phase epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1546-1548 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zinc delta-doped layers have been grown by atmospheric pressure organometallic vapor phase epitaxy. Secondary-ion mass spectroscopy and electrochemical capacitance-voltage profiling were used to measure the spatial distribution of the Zn for both as-grown and annealed samples. The narrowest atomic profiles had full width at half maxima of 70 A(ring) for peak Zn concentrations of ≤3×1018 cm−3. The as-grown width of these profiles is attributed to a combination of dopant memory effect and growth-related diffusion during the actual formation of the delta-doped layer. An effective diffusion coefficient D of ≤7×10−17 cm2/s is estimated for a growth temperature of 625 °C. Rapid thermal annealing at 900 °C for 5 s of several samples grown under various conditions led to calculated values of D in the range 0.5–1.0×10−12 cm2/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102240
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  • 7
    Electronic Resource
    Electronic Resource
    Carbon and zinc delta doping for Schottky barrier enhancement on n-type GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1342-1344 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of thin (50–100 A(ring)), C or Zn δ-doped layers on n-type GaAs is shown to yield large enhancements in the effective Schottky barrier height (ΦB) of TiPtAu contacts subsequently deposited on the material. The incorporation of a single C δ-doped layer (p=1.5×1020 cm−3, 50 A(ring) wide) within 100 A(ring) of the surface leads to a barrier height of 0.93 eV, a significant increase over the value for a control sample (0.76 eV). The use of two sequential δ-doped layers leads to an apparent barrier height in excess of the GaAs band gap (ΦB=1.67 eV). This appears to be consistent with the predictions of a unified defect model. Zinc δ doping (p∼3×1018 cm−3) in a similar fashion produces barrier heights of 0.81 eV for one spike and 0.95 eV for two spikes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101650
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  • 8
    Electronic Resource
    Electronic Resource
    Carbon implantation in InGaAs and AlInAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1263-1265 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown for the first time that carbon behaves predominantly as an acceptor in InGaAs and AlInAs under co-implantation conditions. The co-implanted ion, regardless of species, acts to create vacant lattice sites for occupation by the carbon. Implantation of 40 keV carbon ions alone at doses between 5×1012 and 5×1014 cm−2 followed by annealing in the range 600–950 °C for 10 s does not produce any measurable electrical activity in either material. In InGaAs, carbon implantation at 5×1014 cm−2 produced net acceptor activations of 20, 11, or 6% for Ga, Ar, or As co-implantation, respectively, at the same doses after 700 °C, 10 s anneals. Similar results were obtained for AlInAs after annealing at 900 °C. The diffusion coefficient for carbon is estimated from secondary-ion mass spectrometry measurements to be less than 3.3×10−14 cm2 s−1 at 800 °C in both materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102531
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  • 9
    Electronic Resource
    Electronic Resource
    Carbon doping of AlAs using CCl4 and CBr4 during growth by metalorganic molecular-beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2205-2207 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CBr4 and CCl4 have been investigated as carbon doing sources for deposition of AlAs:C by metalorganic molecular-beam epitaxy. Through the use of CBr4, hole concentrations up to 4.5×1019 cm−3 were achieved in as-deposited AlAs layers. Attempts to increase the hole concentration in as-grown material beyond this level resulted in a decrease in the hole concentration even though (SIMS) and (XRD) analysis show the carbon concentration to increase with increasing dopant flow. By annealing the AlAs after growth, the maximum achievable hole concentration could be increased to 1.1×1020 cm−3, which is the highest yet reported for AlAs:C. This increase in p after annealing is believed due to removal of hydrogen from the lattice which passivates the carbon acceptor. Neither carbon source increased the oxygen background beyond the level of ∼5×1017 cm−3 normally observed in AlAs grown under similar conditions. These compounds do introduce Cl and Br, and reduce the Al incorporation rate due to parasitic etching reactions with the adsorbed halogen. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112762
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  • 10
    Electronic Resource
    Electronic Resource
    A surface modification study of InGaP etched with an electron cyclotron resonance source at variable microwave powers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3286-3289 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Etch-induced surface modifications, utilizing an electron cyclotron resonance source, have been studied as a function of controllable etch parameters. InGaP was etched with BCl3 at a constant substrate temperature (100 °C) and bias voltage (−145 V) using microwave powers varying between 250 and 1000 W. The surface morphology, residual etch damage, and surface stoichiometry were strongly influenced by changes in ion flux. The etch-induced lattice damage and surface smoothness increased as the ion energy was elevated. Low ion flux etching resulted in an In-enriched P-depleted surface suggesting nonuniform desorption of InClx which gave rise to the surface roughness observed at the low microwave powers. The smooth surfaces, achieved at the higher microwave power levels, were attributed to either efficient sputter-assisted desorption of the InClx etch products or to InClx desorption via plasma-induced surface heating. Results of this study demonstrate that etching at microwave powers between 500 and 750 W induce low residual damage and smooth surfaces while maintaining a reasonable etch rate for device processing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361227
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