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  • 1
    Electronic Resource
    Electronic Resource
    Bulk and near-surface annealing behavior of the 0.8 eV luminescence in semi-insulating gallium arsenide (1990)
    Springer
    Applied physics 50 (1990), S. 249-253 
    Details
    ISSN: 1432-0630
    Keywords: 78.60Dg ; 71.55Fr
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An annealing study of the 0.8 eV photoluminescence band in LEC GaAs has been performed, using a combination of 10 min annealing steps over a temperature range of 800–1100° C and one hour furnace annealing steps at 500–700° C. Results show that the defect responsible for the luminescence is stable in bulk material under all annealing conditions that have been investigated. In combination with earlier results, this demonstrates a stability of the defect to temperatures in excess of 900° C and indicates a parallel with the annealing behavior of the 0.67 eV band in semi-insulating GaAs. The observed annealing behavior is very different in the near-surface region, indicating an important role of As out-diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324490
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  • 2
    Electronic Resource
    Electronic Resource
    Role of vanadium in organometallic vapor phase epitaxy grown GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1772-1774 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and photoluminescent properties of vanadium incorporated into GaAs epitaxial layers from a VO(OC2H5)3 source during organometallic vapor phase epitaxy were examined. The vanadium concentration in the GaAs was controllably varied from 1016 to 1018 atoms cm−3. Deep level transient spectroscopy showed the presence of an electron trap at Ec−0.15 eV which increased in concentration with vanadium content of the epitaxial layers. A maximum value of 8×1015 cm−3 for this trap was obtained. There were no midgap electron traps associated with vanadium. In intentionally Si-doped epitaxial layers, co-doping with vanadium was observed to have no effect in reducing the carrier density when the Si concentration was ≥4×1016 cm−3. The net carrier concentration profiles resulting from 29Si implantation into GaAs containing 1018 cm−3 of total V had sharper tails than for similar implantation into undoped material, indicating the presence of less than 1016 cm−3 V-related acceptors. Photoluminescent spectra exhibited the characteristic V+3 intracenter emission at 0.65–0.75 eV. No other deep level photoluminescence was detected. For a V concentration of 1016 cm−3 only 2.5×1013 cm−3 was electrically active. Over the entire V concentration investigated this impurity was predominantly (≥99%) inactive.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101287
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Loss of consciousness after emergence from anaesthesia. A case of suspected micturition syncope (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Anaesthesia 45 (1990), S. 0 
    Details
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: A case of postanaesthesia micturition syncope with respiratory arrest is described. If syncope occurs, the temporary myocardial ischaemia and cerebral hypoperfusion may increase anaesthetic risk in the marginally compensated patient. The loss of airway protection during the syncopal period is also a cause of concern. We recommend the use of an indwelling bladder catheter during any prolonged surgical procedure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2044.1990.tb14442.x
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    Paper (German National Licenses)
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