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  • 1
    Electronic Resource
    Electronic Resource
    Role of vanadium in organometallic vapor phase epitaxy grown GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1772-1774 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and photoluminescent properties of vanadium incorporated into GaAs epitaxial layers from a VO(OC2H5)3 source during organometallic vapor phase epitaxy were examined. The vanadium concentration in the GaAs was controllably varied from 1016 to 1018 atoms cm−3. Deep level transient spectroscopy showed the presence of an electron trap at Ec−0.15 eV which increased in concentration with vanadium content of the epitaxial layers. A maximum value of 8×1015 cm−3 for this trap was obtained. There were no midgap electron traps associated with vanadium. In intentionally Si-doped epitaxial layers, co-doping with vanadium was observed to have no effect in reducing the carrier density when the Si concentration was ≥4×1016 cm−3. The net carrier concentration profiles resulting from 29Si implantation into GaAs containing 1018 cm−3 of total V had sharper tails than for similar implantation into undoped material, indicating the presence of less than 1016 cm−3 V-related acceptors. Photoluminescent spectra exhibited the characteristic V+3 intracenter emission at 0.65–0.75 eV. No other deep level photoluminescence was detected. For a V concentration of 1016 cm−3 only 2.5×1013 cm−3 was electrically active. Over the entire V concentration investigated this impurity was predominantly (≥99%) inactive.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101287
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  • 2
    Electronic Resource
    Electronic Resource
    A comparison of rapid thermal annealing and controlled atmosphere annealing of Si-implanted GaAs (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4732-4737 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemical and electrical characteristics were measured of 100-keV Si+-implanted GaAs at doses of (6 – 10)×1012 cm−2 after rapid thermal annealing (RTA) for times of 5–40 s at temperatures between 850 and 975 °C. Optimal conditions were 5 s at 930 °C in either Ar or Ar–H2 atmospheres. Purity of the gas ambient was critical at the higher temperatures. Surface degradation was minimal for face-to-face annealing, as compared to exposed SiO2 encapsulated surfaces. Essentially identical electrical characteristics were obtained by the preferred RTA conditions as compared to 30-min conventional furnace annealing under optimum conditions at 850 °C using the controlled atmosphere technique. The markedly different RTA annealing times with comparable electrical characteristics are attributed to the differences in the host lattice damage recovery resulting from heat transfer and the actual duration to reach the desired anneal temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335336
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Growth and diffusion of abrupt beryllium-doped profiles in gallium arsenide by organometallic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2411-2413 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown abrupt beryllium-doped profiles in gallium arsenide by organometallic vapor phase epitaxy. Secondary-ion mass spectroscopy is used to study the annealing behavior of profiles with beryllium concentrations of 2×1018 cm−3. The diffusion fronts are non-Gaussian and abrupt. Estimates of the diffusion coefficient of beryllium in gallium arsenide are obtained assuming a quadratic dependence on concentration. The beryllium diffusion coefficient is approximately 10−15 cm2/s at 825 °C and is at least an order of magnitude less than that reported for zinc profiles grown by organometallic vapor phase epitaxy. In addition, we have also observed anomalous surface tailing during growth which is very similar to that reported during beryllium doping by molecular beam epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100412
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Comparison of rapid thermal annealing and controlled atmosphere annealing of ion implanted GaAs
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 24-25 (1987), S. 575-580 
    Details
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0168-583X(87)90712-9
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  • 5
    Electronic Resource
    Electronic Resource
    Origin and reduction of impurities at GaAs epitaxial layer-substrate interfaces
    Amsterdam : Elsevier
    Journal of Crystal Growth 91 (1988), S. 632-638 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(88)90132-7
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