Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 1786-1788
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The sheet resistivity of oxygen-implanted n+-Al0.48In0.52As grown on InP was measured as a function of oxygen ion dose and post-implant annealing temperature. The sheet resistivity is 〉105 Ω/(D'Alembertian) after implantation for doses in the range 1012–8×1013 cm−2, and increases to 〉107 Ω/(D'Alembertian) after annealing at 500 °C. Temperature-dependent Hall measurements show that the resistivity of this compensated AlInAs has a thermal activation energy of 0.68 eV. Above 600 °C the damage-related compensation is removed and the material is returned to its original resistivity. We find no thermally stable, oxygen-related deep acceptors in AlInAs, in contrast to the results for AlGaAs.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102173
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