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  • 1
    Electronic Resource
    Electronic Resource
    Raman scattering study of the high-pressure oxidation of InP (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2154-2156 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Air-grown oxide films formed on InP at temperatures below 500 °C are known to contain elemental phosphorus. Recent literature reports indicated that oxidation under high-pressure conditions converted the elemental phosphorus into P2O5. We have reexamined this finding for oxygen pressures up to 300 atm using Raman scattering. Red phosphorus is detected in both low- (1 atm)and high- (300 atm) pressure oxidized films independent of the substrate doping type.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342870
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  • 2
    Electronic Resource
    Electronic Resource
    Ion implantation damage and annealing in InAs, GaSb, and GaP (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 629-636 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of ion implantation induced damage in InAs, GaSb, and GaP, and its removal by rapid thermal annealing have been investigated by Rutherford backscattering and transmission electron microscopy. There is relatively poor regrowth of these materials if they were amorphized during the implantation, leaving significant densities of dislocation loops, microtwins, and in the case of GaSb, polycrystalline material. For implant doses below the amorphization threshold, rapid annealing produces good recovery of the lattice disorder, with backscattering yields similar to unimplanted material. The redistribution of the implanted acceptor Mg is quite marked in all three semiconductors, whereas the donor Si shows no measurable motion after annealing of InAs or GaP. In GaSb, however, where it appears to predominantly occupy the group III site, it shows redistribution similar to that of Mg.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341952
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  • 3
    Electronic Resource
    Electronic Resource
    Carbon implantation in InP (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2014-2016 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon implanted into InP at doses between 5×1012 and 5×1014 cm−2, either by itself or with B, Ga, Al, or P coimplantation at room temperature or 200 °C, displays donor activity for all annealing temperatures (600–900 °C; 10 s). Phosphorus coimplantation enhances the donor activation percentage over carbon-only implantation, while coimplants of B, Ga, and Al reduce the donor activity. Peak carrier concentrations of 3×1019 cm−3 were obtained for C+P implantation at a dose of 5×1014 cm−2, followed by annealing at 700 °C for 10 s. Annealing at 〉700 °C leads to a reduction in net donor density through carbon site switching to produce self-compensation. The C diffusivity is estimated to be less than 2.5×10−14 cm−2 s−1 at 800 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102276
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  • 4
    Electronic Resource
    Electronic Resource
    Damage-induced high-resistivity regions in Al0.48In0.52As (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1786-1788 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sheet resistivity of oxygen-implanted n+-Al0.48In0.52As grown on InP was measured as a function of oxygen ion dose and post-implant annealing temperature. The sheet resistivity is 〉105 Ω/(D'Alembertian) after implantation for doses in the range 1012–8×1013 cm−2, and increases to 〉107 Ω/(D'Alembertian) after annealing at 500 °C. Temperature-dependent Hall measurements show that the resistivity of this compensated AlInAs has a thermal activation energy of 0.68 eV. Above 600 °C the damage-related compensation is removed and the material is returned to its original resistivity. We find no thermally stable, oxygen-related deep acceptors in AlInAs, in contrast to the results for AlGaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102173
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical and structural changes in the near surface of reactively ion etched InP (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1633-1635 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Near-surface (∼1000 A(ring)) modification in the net carrier concentration in n-type InP (n=6×1015–1.5×1017 cm−3) was observed after reactive ion etching (RIE) in Cl-based (CCl2F2/O2) or organic-based (C2H6/H2) discharges. The carrier loss is slightly more pronounced in the latter case, due possibly to the creation of deep level, compensating acceptors at greater depths as a result of implantation of the light hydrogen ions. Near-complete recovery of the initial carrier density occurs after annealing at 500 °C for 30 s. Structural disorder is detected by ion channeling to depths of ∼400 A(ring) after C2H6/H2 RIE with a self-bias of 380 V. This disorder shows significant recovery after 400 °C, 30 s annealing. Current-voltage measurements on Au Schottky diodes showed ohmic behavior after etching of the InP in a C2H6/H2 discharge, due to the nonstoichiometric surface remaining after RIE. Diodes fabricated on CCl2F2/O2 etched material show only a slight increase in reverse current compared to unetched control samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102221
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  • 6
    Electronic Resource
    Electronic Resource
    Carbon implantation in InGaAs and AlInAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1263-1265 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown for the first time that carbon behaves predominantly as an acceptor in InGaAs and AlInAs under co-implantation conditions. The co-implanted ion, regardless of species, acts to create vacant lattice sites for occupation by the carbon. Implantation of 40 keV carbon ions alone at doses between 5×1012 and 5×1014 cm−2 followed by annealing in the range 600–950 °C for 10 s does not produce any measurable electrical activity in either material. In InGaAs, carbon implantation at 5×1014 cm−2 produced net acceptor activations of 20, 11, or 6% for Ga, Ar, or As co-implantation, respectively, at the same doses after 700 °C, 10 s anneals. Similar results were obtained for AlInAs after annealing at 900 °C. The diffusion coefficient for carbon is estimated from secondary-ion mass spectrometry measurements to be less than 3.3×10−14 cm2 s−1 at 800 °C in both materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102531
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  • 7
    Electronic Resource
    Electronic Resource
    Ion milling damage in InP and GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2760-2768 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Near-surface damage created by Ar+ ion milling in InP and GaAs was characterized by capacitance-voltage, current-voltage, photoluminescence, ion channeling, and transmission electron microscopy. We find no evidence of amorphous layer formation in either material even for Ar+ ion energies of 800 eV. Low ion energies (200 eV) create thin (≤100 A(ring)) damaged regions which can be removed by annealing at 500 °C. Higher ion energies (≥500 eV) create more thermally stable damaged layers which actually show higher backscattering yields after 500 °C annealing. Heating to 800 °C is required to restore the near-surface crystallinity, although a layer of extended defects forms in GaAs after such a treatment. No dislocations are observed in InP after this type of annealing. The electrical characteristics of both InP and GaAs after ion milling at ≥500 eV cannot be restored by annealing, and it is necessary to remove the damaged surface by wet chemical etching. For the same Ar+ ion energies the damaged layers are deeper for InP than for GaAs after 500 eV ion milling at 45° incidence angle. Removal of ∼485 and ∼650 A(ring) from GaAs and InP, respectively, restores the initial current-voltage characteristics of simple Schottky diodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346453
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  • 8
    Electronic Resource
    Electronic Resource
    Aluminum composition dependence of reactive ion etching of AlGaAs with CCl2F2:O2 (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2137-2147 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The etch rate and surface chemistry of AlxGa1−xAs after reactive ion etching (RIE) in CCl2F2:O2 was examined as a function of etch time (1–22 min), plasma power density (0.3–1.3 W cm−2), pressure (1–30 mTorr), gas composition (0%–80% O2), gas flow rate (10–50 sccm), sample temperature (50–350 °C), and Al composition (x=0.15–1). The etch rate is nonlinear with time, and decreases rapidly with increasing AlAs mole fraction. Essentially no temperature dependence of the etch rate is observed under our conditions, and there are no major differences in the surface chemistries of AlGaAs etched at different temperatures. The formation of a thin layer (50–90 A(ring)) of AlF3 during the RIE treatment appears to control the etch rate, and the surface morphology becomes progressively smoother for increasing Al composition. No residual lattice disorder is detected by cross-sectional transmission electron microscopy under any of our conditions, although current-voltage measurements on Schottky barrier diodes fabricated after RIE show higher ideality factors and barrier heights than unetched control samples. Annealing at 500 °C for 30 s almost restores the initial electrical properties of the material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344309
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  • 9
    Electronic Resource
    Electronic Resource
    Fabrication and performance characteristics of buried-facet optical amplifiers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3943-3947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fabrication, performance characteristics, and design rules of buried-facet optical amplifiers are described. Chip gain of 25 dB, gain ripple of 〈1 dB, and gain difference of ≤1 dB for TE- and TM-polarized light are observed. The gain ripple and polarization dependence of gain correlate well with the ripple and polarization dependence of the amplified spontaneous emission spectrum. The performance of buried-facet amplifiers is comparable to that of cleaved-facet amplifiers with very good antireflection (R〈10−4) coatings. The buried-facet design reduces the requirement on antireflection coatings and makes the fabrication process more reproducible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345003
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  • 10
    Electronic Resource
    Electronic Resource
    A photoluminescence study of hydrogenated GaAs grown on an InP substrate by metalorganic chemical vapor deposition (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 902-905 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of hydrogenation on the low-temperature (5 K) photoluminescence properties of GaAs grown on InP substrate by metalorganic chemical vapor deposition are investigated. An emission band at ∼1.4 eV originating from the GaAs/InP interfacial region shows a 30-fold increase in intensity relative to the GaAs band-edge emission after exposure to hydrogen plasma for 30 min at 250 °C. This improvement in intensity is attributed to hydrogen passivation of defects at the heterointerface caused by the large (≈4%) lattice mismatch between GaAs and InP. Annealing the hydrogenated sample at 350 °C nullifies the passivation effect. Further, the 1.4-eV band shifts to higher energy on annealing the sample in the temperature range 150–450 °C with the hydrogenated sample exhibiting a larger shift than the untreated sample. It is suggested that the annealing-induced peak shift arises due to modification of the interface and that it is greater in the hydrogenated sample compared to the untreated sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346757
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