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  • 1
    Electronic Resource
    Electronic Resource
    Unintentional Hydrogenation of III-V Semiconductors during Device Processing (1992)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 83-87 (Jan. 1992), p. 617-622 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/21/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.83-87.617.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical effects of atomic hydrogen incorporation in GaAs-on-Si (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 347-353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have introduced atomic hydrogen by two methods into GaAs layers epitaxially grown on Si substrates, namely, by exposure to a hydrogen plasma or by proton implantation. In both cases, when proper account is taken of shallow dopant passivation or compensation effects, there is a significant improvement in the reverse breakdown voltage of simple TiPtAu Schottky diodes. Proton implantation into undoped (n=3×1016 cm−3) GaAs-on-Si leads to an increase in this breakdown voltage from 20 to 30 V, whereas plasma hydrogenation improves the value from 2.5 to 6.5 V in n-type (2×1017 cm−3) GaAs-on-Si. Annealing above 550 °C removes the beneficial effects of the hydrogenation, coincident with extensive redistribution of the hydrogen. This leaves an annealing temperature window of about 50 °C in the H-implanted material, in comparison to 150 °C for the plasma-hydrogenated material. The hydrogen migrates out of the GaAs to both the surface and heterointerface, where it shows no further motion even at 700 °C. Trapping in the GaAs close to the heterointerface is shown to occur at stacking faults and microtwins, in addition to extended dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342547
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  • 3
    Electronic Resource
    Electronic Resource
    Depth dependence of silicon donor passivation and reactivation in hydrogenated GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1769-1771 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The depth dependence of silicon donor passivation and reaction in hydrogenated GaAs is directly determined for the first time by using 1000 A(ring) layers of 1017 cm−3 Si-doped GaAs, buried at various depths in undoped GaAs. Low-frequency hydrogen plasma exposure for 30 min at 250 °C reduces the carrier density by only a factor of 3 in layers buried 3 μm deep, but by three orders of magnitude in layers buried 0.3 μm deep. Annealing at 400 °C for 5 min restores 100% of the original carrier density in the 3-μm-deep layer but only 73% in the 0.3-μm-deep layer. Plasma exposure and 400 °C annealing together do not improve the mobility in the molecular beam epitaxial samples at any depth. Hydrogen-related acceptors seen by photoluminescence account for these effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101286
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  • 4
    Electronic Resource
    Electronic Resource
    A surface modification study of InGaP etched with an electron cyclotron resonance source at variable microwave powers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3286-3289 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Etch-induced surface modifications, utilizing an electron cyclotron resonance source, have been studied as a function of controllable etch parameters. InGaP was etched with BCl3 at a constant substrate temperature (100 °C) and bias voltage (−145 V) using microwave powers varying between 250 and 1000 W. The surface morphology, residual etch damage, and surface stoichiometry were strongly influenced by changes in ion flux. The etch-induced lattice damage and surface smoothness increased as the ion energy was elevated. Low ion flux etching resulted in an In-enriched P-depleted surface suggesting nonuniform desorption of InClx which gave rise to the surface roughness observed at the low microwave powers. The smooth surfaces, achieved at the higher microwave power levels, were attributed to either efficient sputter-assisted desorption of the InClx etch products or to InClx desorption via plasma-induced surface heating. Results of this study demonstrate that etching at microwave powers between 500 and 750 W induce low residual damage and smooth surfaces while maintaining a reasonable etch rate for device processing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361227
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  • 5
    Electronic Resource
    Electronic Resource
    Carbon-doped impurity induced layer disorder 0.98 μm lasers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 590-592 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated high power carbon-doped InGaAs/AlGaAs lasers using an impurity-induced layer disordering process to define the active region. The advantage of carbon doping is that it exhibits significantly lower diffusivity compared to other p-type dopants, thereby avoiding displacement of the p-n junction, even at the high temperatures and long diffusion times required by the disordering process. Secondary ion mass spectrometry (SIMS) measurements before and after Si diffusion show the p-n junction position to be unchanged during processing. The carbon was introduced using CCl4 as an extrinsic precursor, giving improved control over doping levels and ternary growth conditions that is not available with intrinsic carbon doping. Thresholds of 20 mA and slope efficiencies of 0.44 mW/mA at 25 °C were obtained for lasers with cavity lengths of 500 μm and coated facets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357048
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  • 6
    Electronic Resource
    Electronic Resource
    (GaAs)m(AlAs)n short-period superlattice quantum-well lasers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2085-2088 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and performance characteristics of (GaAs)3/(AlAs)1 short-period superlattice (SPS) quantum-well lasers emitting at 737 nm. The SPSs consists of eight periods of 3 and 1 monolayers of GaAs and AlAs, respectively. The (GaAs)m/(AlAs)n SPSs have many advantages over their equivalent AlGaAs alloy counterparts. The broad-area threshold current density, Jth, for 500-μm-long lasers is 510 A cm−2. The 500-μm-long ridge waveguide lasers have a threshold current of 48 mA with a characteristic temperature of 68 K in the temperature range 19–60 °C. The external differential quantum efficiency near threshold is 0.58 mW/mA/facet. The devices lase in a single mode with spectral width within the resolution limit of the spectrometer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353155
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  • 7
    Electronic Resource
    Electronic Resource
    A photoluminescence study of hydrogenated GaAs grown on an InP substrate by metalorganic chemical vapor deposition (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 902-905 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of hydrogenation on the low-temperature (5 K) photoluminescence properties of GaAs grown on InP substrate by metalorganic chemical vapor deposition are investigated. An emission band at ∼1.4 eV originating from the GaAs/InP interfacial region shows a 30-fold increase in intensity relative to the GaAs band-edge emission after exposure to hydrogen plasma for 30 min at 250 °C. This improvement in intensity is attributed to hydrogen passivation of defects at the heterointerface caused by the large (≈4%) lattice mismatch between GaAs and InP. Annealing the hydrogenated sample at 350 °C nullifies the passivation effect. Further, the 1.4-eV band shifts to higher energy on annealing the sample in the temperature range 150–450 °C with the hydrogenated sample exhibiting a larger shift than the untreated sample. It is suggested that the annealing-induced peak shift arises due to modification of the interface and that it is greater in the hydrogenated sample compared to the untreated sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346757
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  • 8
    Electronic Resource
    Electronic Resource
    Hydrogen passivation of acceptors in p-InP (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1993-1996 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The problem of hydrogenation of InP without surface degradation has been surmounted by exposure of the InP surface to a hydrogen plasma through a thin SiNx(H) cap layer. This layer is H permeable at the hydrogenation temperature of 250 °C, but P or PH3 impermeable thus minimizing PH3 loss and the attendant In droplet formation. In contrast to our results for this type of plasma exposure of GaAs, we find that shallow acceptors in InP are heavily passivated, whereas shallow donors are only very weakly affected. For example, p+-InP(Zn) of 3×1018 cm−3 has its residual hole concentration reduced to ≤3×1014 cm−3 over a depth of 1.3 μm by a 250 °C, 0.5 h deuteration. The presence of acceptors impedes H (or D) indiffusion, as indicated by D diffusion under the same conditions occurring to depths of 18 and 35 μm in p-InP (Zn, 2×1016 cm−3) and n-InP (S or Sn), respectively. Annealing for 1 min at 350 °C causes the acceptor passivation to be lost and the hole concentration to be returned to its prehydrogenation level, indicating that the passivation has similar thermal stability to that of acceptors in GaAs, but lower than that of donors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344508
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  • 9
    Electronic Resource
    Electronic Resource
    High-speed modulation and nonlinear damping effect in InGaAs/GaAs lasers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2476-2478 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high-speed modulation characteristics of ridge waveguide InGaAs/GaAs strained quantum well lasers have been investigated. The lasers have bandwidth of 12 GHz at 21 mW of output power. The differential gain coefficient, the nonlinear damping factor (κ factor) and the gain suppression coefficient (ε) are found to be 6.4 × 10−16 cm2, 0.6 ns and 6.2 × 10−17 cm3, respectively. The above differential gain coefficient and κ factor for InGaAs/GaAs strained quantum-well lasers are a factor of 2 larger than that for unstrained InGaAs/InP quantum-well lasers. The ε value for these strained and unstrained quantum-well lasers are comparable.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349405
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  • 10
    Electronic Resource
    Electronic Resource
    Two-photon photocurrent imaging of vertical cavity surface emitting lasers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1510-1512 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that two-photon photocurrent imaging can be used to nondestructively study vertical cavity surface emitting lasers on a microscopic level. In particular, we study the aperture isolation created by shallow ion implantation. The combination of two-photon backside imaging and a probe station is ideal for internal and full wafer characterization. The required peak and average power levels for testing can be easily satisfied by available compact ultrafast laser sources, making the technique practical and user friendly. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126079
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