Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Electrical effects of atomic hydrogen incorporation in GaAs-on-Si (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 347-353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have introduced atomic hydrogen by two methods into GaAs layers epitaxially grown on Si substrates, namely, by exposure to a hydrogen plasma or by proton implantation. In both cases, when proper account is taken of shallow dopant passivation or compensation effects, there is a significant improvement in the reverse breakdown voltage of simple TiPtAu Schottky diodes. Proton implantation into undoped (n=3×1016 cm−3) GaAs-on-Si leads to an increase in this breakdown voltage from 20 to 30 V, whereas plasma hydrogenation improves the value from 2.5 to 6.5 V in n-type (2×1017 cm−3) GaAs-on-Si. Annealing above 550 °C removes the beneficial effects of the hydrogenation, coincident with extensive redistribution of the hydrogen. This leaves an annealing temperature window of about 50 °C in the H-implanted material, in comparison to 150 °C for the plasma-hydrogenated material. The hydrogen migrates out of the GaAs to both the surface and heterointerface, where it shows no further motion even at 700 °C. Trapping in the GaAs close to the heterointerface is shown to occur at stacking faults and microtwins, in addition to extended dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342547
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Shallow Si p+-n junctions fabricated by focused ion beam Ga+ implantation through thin Ti and TiSi2 layers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2318-2322 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Focused ion beam Ga+ implantation through Ti metal (ITM) and TiSi2 (ITS) layers, followed by rapid thermal annealing (RTA), has been investigated for application in self-aligned silicide technology. The Ga+ energy was varied from 25 to 50 keV at doses of 1×1013 and 1×1015 cm−2 followed by RTA at 600 °C for 30 s. Depth profiles of the Ga implants were obtained by performing secondary-ion mass spectrometry. It was observed that higher-energy and higher-dose implants yielded good quality p+-n junction characteristics. Diodes were fabricated to obtain the electrical properties of these silicided junctions. At higher implant energies (≥40 keV) and all doses, I-V characteristics of ITS diodes showed 100 times lower leakage currents (Ir) than ITM diodes. For low-energy (〈40 keV)/high-dose implantation the ITS diodes showed a slight improvement in Ir over the ITM diodes, whereas for low-energy/low-dose implantation the same Ir was observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354717
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Correlation of substitutional hydrogen to refractive index profiles in annealed proton-exchanged Z- and X-cut LiNbO3 (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2697-2708 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Previous disagreements concerning a linear correlation between the hydrogen (H) concentration and the extraordinary refractive index ne in proton-exchanged lithium niobate (LiNbO3) have been resolved by partitioning the total H into optically active substitutional H and optically inactive interstitial H. The H and Li spatial variations in both Z- and X-cut crystals were determined by secondary-ion-mass spectrometry (SIMS) with a quantitative evaluation in atoms/cm3. These samples were proton exchanged in neat benzoic acid at 185 °C and then were annealed at 400 °C for times t from 6 to 240 min in wet flowing oxygen. For the Z-cut crystals, fit of the SIMS measured H profiles by expressions obtained from the diffusion equation for diffusion from a finite layer gave a substitutional H diffusivity of DZs=5.0±0.3×10−12 cm2/s and an interstitial H diffusivity of DZi=1.4±0.1×10−11 cm2/s. The wet flowing oxygen acts as a constant source of interstitial H at the surface with the diffusivity DZi and gives an integrated H concentration due to the flowing wet oxygen which increases as (square root of)t. The Li diffusivity was DLiZ=4.8±0.2×10−12 cm2/s which is nearly equal to DZs. For X-cut crystals, the substitutional H diffusivity was DXs=3.4±0.2×10−12 cm2/s and the interstitial diffusivity was DXi=1.3±0.2×10−11 cm2/s. The ne profiles were evaluated by means of optical prism-coupling measurements and numerical simulations. In both cases of crystal orientation, the effective index diffusivity is nearly equal to the diffusivity of substitutional H. Furthermore, there is an excellent linear relationship between the ne profile and the corresponding substitutional H distribution. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358738
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Secondary ion mass spectrometry depth profiling of proton-exchanged LiNbO3 waveguides (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 6055-6058 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simultaneous depth profiles for H and Li have been measured in proton-exchanged lithium niobate crystals (LiNbO3) by the use of charge-compensated secondary ion mass spectrometry (SIMS). Electron flooding of the insulator during sputtering permits accurate depth profiling through the exchanged region and into the substrate. Four samples of z-cut proton-exchanged LiNbO3 were analyzed using SIMS, and were used in optical waveguiding experiments. In each sample, the H distribution is in the shape of a plateau that extends from the surface to a depth that is in good agreement with the results of the optical waveguiding measurements.The Li profiles show reduced concentrations within the regions of high H concentration, that is, within the waveguiding regions. Based on SIMS data, the proton-exchange process appears to stabilize at a value of 0.4〈x〈0.5 for the Li1−xHxNbO3 compound.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343584
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Systematics of positive secondary ion mass spectrometry relative sensitivity factors for Si and SiO2 measured using oxygen and argon ion bombardment (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 463-465 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured normalized positive ion yields of more than 20 elements implanted into SiO2 and compare them with positive ion yields of the same elements sputtered from Si by oxygen and argon ion bombardment. All measurements were made using similar instruments and similar primary ion beam conditions; thus, we compare secondary ion emission from an unoxygenated matrix (Si using argon ion bombardment), from a partially oxygenated matrix (Si using oxygen ion bombardment), and from a fully oxygenated matrix (SiO2). Plots of the logarithm of secondary ion yield or secondary ion mass spectrometry relative sensitivity factor (RSF) versus ionization potential of the sputtered impurity elements exhibit primary linear trends for these three conditions, the slopes of which decrease with increasing oxygenation. A trend line of opposite slope for impurity elements that have ionization potential greater than about 10.5 eV is observed in each case. This latter trend moves to lower values of yield (higher RSF) with increasing oxygenation, perhaps as the result of competition from electronegative elements with oxygen in forming element–Si bonds. These observed changes are primarily the result of increasing the oxygen content in the surface of the Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347686
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Systematics of secondary-ion-mass spectrometry relative sensitivity factors versus electron affinity and ionization potential for a variety of matrices determined from implanted standards of more than 70 elements (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 466-474 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured and plotted the dependence of secondary-ion-mass spectrometry (SIMS) relative sensitivity factor (RSF) on electron affinity and ionization potential of up to 74 elements implanted into 23 materials, measured using oxygen-ion bombardment and positive SIMS, and cesium-ion bombardment and negative SIMS. Reproducibility of ±60% in RSF has been demonstrated for many of these implanted standards over a period of 8 years in several Cameca magnetic sector instruments, especially in Si, GaAs, and HgCdTe matrices. More recently, reproducibilities of ±20%–30% have been achieved using more controlled experimental techniques. Similarities among plots of logRSF versus ionization potential or electron affinity have been found for a variety of semiconductor, metal, and insulator matrices. Universal patterns and trends are observed for oxygen bombardment and positive SIMS, and for cesium bombardment and negative SIMS. Four major regions are seen in the dependence of logRSF on ionization potential, one with possibly three branches with slightly differing slopes, that are characterized by elements from various groups of the periodic table. There are two major regions in the plots of RSF versus electron affinity, one of which is a region of constant RSF versus electron affinity, which includes the more electronegative elements, and meaning that the RSF is a constant for most of the elements commonly analyzed using negative (cesium) SIMS. This constant RSF has been measured for 20 matrices. We report the values of slope of logRSF versus ionization potential for the matrices studied and discuss the possible extension to other matrices. We tabulate the values of RSF for 74 elements in Si and for 69 elements in GaAs, as examples. Tentative explanations of the features of these dependencies are consistent with existing theories and models. We give generalized patterns of RSF (ion yield) versus ionization potential or electron affinity and an equation from which RSFs can be calculated for the matrices studied, and possibly others.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347687
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Analysis of hydrogen diffusion from proton-exchanged layers in LiNbO3 (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 718-720 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen profiles for proton-exchanged layers in Z-cut LiNbO3 were obtained by secondary ion mass spectrometry measurements after annealing at 400 °C for times from 6 to 180 min. To fit the measured hydrogen profiles, it was necessary to use two separate Gaussian diffusion profiles which could be designated as a more slowly diffusing substitutional hydrogen on lithium sites and a more rapidly diffusing interstitial hydrogen. At 400 °C, analysis leads to a substitutional hydrogen diffusion coefficient Ds≈4.6×10−12 cm2/s and an interstitial hydrogen diffusion coefficient Di≈1.5×10−11 cm2/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109938
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...