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  • 1
    Electronic Resource
    Electronic Resource
    Electrical effects of atomic hydrogen incorporation in GaAs-on-Si (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 347-353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have introduced atomic hydrogen by two methods into GaAs layers epitaxially grown on Si substrates, namely, by exposure to a hydrogen plasma or by proton implantation. In both cases, when proper account is taken of shallow dopant passivation or compensation effects, there is a significant improvement in the reverse breakdown voltage of simple TiPtAu Schottky diodes. Proton implantation into undoped (n=3×1016 cm−3) GaAs-on-Si leads to an increase in this breakdown voltage from 20 to 30 V, whereas plasma hydrogenation improves the value from 2.5 to 6.5 V in n-type (2×1017 cm−3) GaAs-on-Si. Annealing above 550 °C removes the beneficial effects of the hydrogenation, coincident with extensive redistribution of the hydrogen. This leaves an annealing temperature window of about 50 °C in the H-implanted material, in comparison to 150 °C for the plasma-hydrogenated material. The hydrogen migrates out of the GaAs to both the surface and heterointerface, where it shows no further motion even at 700 °C. Trapping in the GaAs close to the heterointerface is shown to occur at stacking faults and microtwins, in addition to extended dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342547
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  • 2
    Electronic Resource
    Electronic Resource
    Depth dependence of silicon donor passivation and reactivation in hydrogenated GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1769-1771 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The depth dependence of silicon donor passivation and reaction in hydrogenated GaAs is directly determined for the first time by using 1000 A(ring) layers of 1017 cm−3 Si-doped GaAs, buried at various depths in undoped GaAs. Low-frequency hydrogen plasma exposure for 30 min at 250 °C reduces the carrier density by only a factor of 3 in layers buried 3 μm deep, but by three orders of magnitude in layers buried 0.3 μm deep. Annealing at 400 °C for 5 min restores 100% of the original carrier density in the 3-μm-deep layer but only 73% in the 0.3-μm-deep layer. Plasma exposure and 400 °C annealing together do not improve the mobility in the molecular beam epitaxial samples at any depth. Hydrogen-related acceptors seen by photoluminescence account for these effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101286
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  • 3
    Electronic Resource
    Electronic Resource
    Highly stable W/p-In0.53Ga0.47As ohmic contacts formed by rapid thermal processing (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2220-2222 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tungsten contacts to Zn-doped In0.53Ga0.47As have been formed by rapid thermal processing. Contacts to layers with a Zn doping concentration of 5×1018 cm−3 were rectifying as sputter deposited as well as after heat treatments at temperatures lower than 450 °C. Higher processing temperatures caused a linear decrease of the contact resistivity values from 0.6 as deposited to 0.15 Ω mm after heating at 550 °C. Rapid thermal processing at these higher temperatures stimulated the Schottky-to-ohmic contact conversion with a minimum contact resistance value of 8.5×10−5 Ω cm2 and a sheet resistance value of 150 Ω/(D'Alembertian) as a result of heating at 600 °C for 30 s. By increasing the p-InGaAs doping level to 1×1019 cm−3, the specific resistance of this contact was dropped to the minimum of 7.5×10−6 Ω cm2 as a result of heating at 600 °C for 30 s. The W/p-In0.53Ga0.47As contact showed excellent thermal stability over the temperature range of 300–750 °C, with an abrupt and almost unreacted metal-semiconductor interface. Heating at temperatures of 800 °C or higher caused degradation of the contact. This was reflected by a distinct increase in the heterostructure sheet resistance as a result of the intensive interfacial reaction which took place at the contact, accompanied by outdiffusion of both In and As.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102066
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  • 4
    Electronic Resource
    Electronic Resource
    Passivation of acceptors in InP resulting from CH4/H2 reactive ion etching (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 56-58 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive ion etching of InP with CH4/H2 mixtures leads to hydrogen passivation of near-surface Zn acceptors but not S donors. Secondary-ion mass spectrometry (SIMS) measurements of CH4/D2 etched samples show deuterium diffuses to a depth of 2000 A(ring) in p-InP (1.5×1018 cm−3) when etching at a rate of 520 A(ring)/min and a temperature of about 80 °C. Acceptor passivation occurs to the same depth. For n-InP, no donor passivation is observed, even though SIMS shows deuterium diffusion to a depth of 7000 A(ring). Annealing at 350 °C for 1 min restores carrier concentrations to near pre-etched levels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101752
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  • 5
    Electronic Resource
    Electronic Resource
    Pt/Ti/p-In0.53Ga0.47As low-resistance nonalloyed ohmic contact formed by rapid thermal processing (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2306-2308 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very low resistance nonalloyed ohmic contacts of Pt/Ti to 1.5×1019 cm−3 Zn-doped In0.53Ga0.47As have been formed by rapid thermal processing. These contacts were ohmic as deposited with a specific contact resistance value of 3.0×10−4 Ω cm2. Cross-sectional transmission electron microscopy showed a very limited interfacial reacted layer (20 nm thick) between the Ti and the InGaAs as a result of heating at 450 °C for 30 s. The interfacial layer contained mostly InAs and a small portion of other five binary phases. Heating at 500 °C or higher temperatures resulted in an extensive interaction and degradation of the contact. The contact formed at 450 °C, 30 s exhibited tensile stress of 5.6×109 dyne cm−2 at the Ti/Pt bilayer, but the metal adhesion remained strong. Rapid thermal processing at 450 °C for 30 s decreased the specific contact resistance to a minimum with an extremely low value of 3.4×10−8 Ω cm2 (0.08 Ω mm), which is very close to the theoretical prediction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101110
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  • 6
    Electronic Resource
    Electronic Resource
    Interfacial microstructure and electrical properties of the Pt/Ti ohmic contact in p-In0.53Ga0.47As formed by rapid thermal processing (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3754-3760 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interfacial microstructure and electrical properties of the Pt/Ti ohmic contact to p-In0.53Ga0.47As (Zn: 5×1018 cm−3) formed by rapid thermal processing (RTP) were intensively studied. Significant interdiffusion of Ti, In, and As across the interface, driven by RTP, occurred at temperatures of, or above, 350 °C for a heating duration of 30 s. A minimum specific contact resistance (9.0×10−6 Ω cm2) was achieved after heating at 450 °C. Cross-sectional transmission electron microscopy of this sample revealed an interfacial reaction zone with complicated microstructure, and the dominant interfacial compound was identified to be InAs. Further increase in RTP temperature resulted in a change in the microstructure, and degradation of the contact resistance. The temperature-dependence characteristic of the specific contact resistance of as-deposited Pt/Ti contact to InGaAs revealed a thermionic-emission-dominated carrier-transport mechanism with an effective barrier height φb, of 0.13 V. RTP treatment to the sample at elevated temperatures up to 450 °C decreased the temperature dependence of the contact resistance. This phenomenon strongly suggests a partial conversion of the dominant carrier-transport mechanism across the contact area from thermionic emission to field emission. This was further verified by fitting the temperature dependence of the measured contact resistance to a phenomenological theory based on a linear combination of the two different types of carrier-transport mechanisms operating at isolated area segments distributed uniformly across the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345018
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  • 7
    Electronic Resource
    Electronic Resource
    AuBe/p-InGaAsP contact formed by rapid thermal processing (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2056-2060 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Alloyed ohmic contacts of AuBe (1% Be by weight) to 5×1018 cm−3 Zn-doped p-InGaAsP (λg=1.3 μm) were fabricated by rapid thermal processing and its performance was compared to those of the contacts formed by conventional furnace heating. The specific contact resistance decreased from a value of 4.9×10−4 Ω cm2 as-deposited to a value of 4.9×10−7 Ω cm2 as a result of rapid thermal processing at 420 °C for 30 s. This value was much lower than the value of 3.9×10−6 Ω cm2 obtained as a result of furnace heat treatment at 420 °C for 10 min. Rapid thermal processing at higher temperatures caused a sharp increase of the specific contact resistance. Auger depth profiling indicated that the degradation of the contact electrical performance at temperatures of 450 °C or higher were caused by intensive localized interactions between the AuBe and the InGaAsP and out-diffusion of all the quaternary elements toward the surface of the contact. The effective stress in the alloyed layer, normalized to the initial AuBe thickness of 80 nm, was tensile with a value of 7×109 dyn cm−2, and was less sensitive to the alloying parameters (time and temperature) than was the contact resistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344295
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  • 8
    Electronic Resource
    Electronic Resource
    Pt/Ti/n-InP nonalloyed ohmic contacts formed by rapid thermal processing (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3872-3875 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low resistance nonalloyed ohmic contacts of e-gun evaporated Pt/Ti to S doped n-InP 5×1017, 1×1018, and 5×1018 cm−3 have been fabricated by rapid thermal processing. The contacts to the lower doped substrates (5×1017 and 1×1018 cm−3) were rectifying as-deposited as well as after heat treatment at temperatures lower than 350 °C. Higher processing temperatures stimulated the Schottky to ohmic contact conversion with minimum specific contact resistance of 1.5×10−5 and 5×10−6 Ω cm2, respectively, as a result of rapid thermal processing at 450 °C for 30 s. Heating at a temperature of 550 °C again yielded a Schottky contact. The contact to the 5×1018 cm−3 InP was ohmic as deposited with a specific contact resistance value of 1.1×10−4 Ω cm2. Supplying heat treatment to the contact caused a decrease of the specific contact resistance to a minimum of 8×10−7 Ω cm2 as a result of rapid thermal processing at 450 °C for 30 s. In all cases, this heat treatment caused a limited interfacial reactions between the Ti and the InP, and resulted in an almost abrupt interface. Heating at temperatures higher than 500 °C resulted in an interfacial intermixing and a mutual migration and reaction of the Ti and the semiconductor elements. The Pt/Ti bilayer structure was highly tensile as deposited (5×109 dyn cm−2) and became stress-free as a result of the interfacial reactions which took place while heating the samples to temperature of 400 °C or higher.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344986
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  • 9
    Electronic Resource
    Electronic Resource
    Stress measurements of Pt/Ti/InP and Pt/Ti/SiO2/InP systems: In situ measurements through sintering and after rapid thermal processing (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6237-6246 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stresses induced in an evaporated Pt(75 nm)/Ti(50 nm) bilayer metallization scheme on InP and SiO2 (300 nm)/InP substrates, as well as the stress in a SiO2 layer (300 nm) on an InP substrate, were measured in situ during sintering at temperatures of 25 to 500 °C and after rapid thermal processing (RTP) at temperatures of 400, 450, and 500 °C for 30 s. The as-deposited highly tensile Pt/Ti bilayer structure on InP (5×109 dyn cm−2) was found to be stress-free when heated to 400 °C and to have relatively low tensile stress after cooling back to room temperature. The as-deposited Pt/Ti/SiO2 structure on InP was found to be only moderately tensile stressed (3×109 dyn cm−2) and became more tensile as a result of heating to 500 °C (5×109 dyn cm−2). The high tensile stress was preserved even after cooling back to room temperature. This is mostly due to the tendency of the plasma-enhanced chemical vapor deposited (PECVD) SiO2 layer to undergo densification and switch its as-deposited compressive stress (−2.5×109 dyn cm−2) to tensile (2×109 dyn cm−2) when heated to 500 °C. The measured stresses after rapid thermal processing (RTP) revealed no observable difference from the in situ measured stresses. This suggests a negligible influence of the speed of heating and cooling through the RTP on the overall stresses induced in the thin layers. The previously unknown coefficient of thermal expansion and the biaxial elastic moduli of the PECVD SiO2 and the evaporated Ti and Pt thin films were determined by in situ stress measurements of the above-mentioned structure as well as systems composed of the same thin layers deposited on Si, GaAs, GaP, and InAs substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345190
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  • 10
    Electronic Resource
    Electronic Resource
    Temperature dependence of the resistance in the Pt/Ti nonalloyed ohmic contacts to p-InAs induced by rapid thermal processing (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4141-4150 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the resistance in the Pt(60 nm)/Ti(50 nm) nonalloyed ohmic contacts to p-InAs (Zn doped 1×1018 to 1×1019 cm−3 ) induced by rapid thermal processing in the temperature range of 300–600 °C was studied. The ohmic nature of these contacts was attributed to both the low metal-semiconductor interfacial barriers and to the heavily doped semiconductor contacting layers. A phenomenological model was used to fit the measured temperature dependence contact resistance. The results indicated conversion from thermionic emission as the dominant carriers transport mechanism across the interfacial barrier for the as-deposited sample to a combination of thermionic and field emission mechanism for the heat-treated samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346256
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