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  • 1
    Electronic Resource
    Electronic Resource
    Electrical effects of atomic hydrogen incorporation in GaAs-on-Si (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 347-353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have introduced atomic hydrogen by two methods into GaAs layers epitaxially grown on Si substrates, namely, by exposure to a hydrogen plasma or by proton implantation. In both cases, when proper account is taken of shallow dopant passivation or compensation effects, there is a significant improvement in the reverse breakdown voltage of simple TiPtAu Schottky diodes. Proton implantation into undoped (n=3×1016 cm−3) GaAs-on-Si leads to an increase in this breakdown voltage from 20 to 30 V, whereas plasma hydrogenation improves the value from 2.5 to 6.5 V in n-type (2×1017 cm−3) GaAs-on-Si. Annealing above 550 °C removes the beneficial effects of the hydrogenation, coincident with extensive redistribution of the hydrogen. This leaves an annealing temperature window of about 50 °C in the H-implanted material, in comparison to 150 °C for the plasma-hydrogenated material. The hydrogen migrates out of the GaAs to both the surface and heterointerface, where it shows no further motion even at 700 °C. Trapping in the GaAs close to the heterointerface is shown to occur at stacking faults and microtwins, in addition to extended dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342547
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  • 2
    Electronic Resource
    Electronic Resource
    High-resistivity GaSb grown by molecular-beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1316-1319 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaSb undoped layers grown by molecular-beam epitaxy on GaSb or on semi-insulating GaAs substrates at temperatures between 600 and 630 °C are shown to have carrier concentrations in the low 1013 cm−3 range, corresponding to almost intrinsic conditions. The materials have been characterized using current-voltage, capacitance-voltage, Hall effect, photoluminescence, thermally stimulated current, and secondary-ion mass spectrometry. Bulk GaSb (n type) is also found to have converted to high-resistance p type after a heat treatment at 630 °C. Speculations are offered for the responsible mechanism, but a definitive explanation does not exist at this time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351739
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  • 3
    Electronic Resource
    Electronic Resource
    High-resistivity GaAs grown by high-temperature molecular-beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1320-1322 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that when grown by molecular-beam epitaxy at high temperatures around 700 °C, undoped GaAs layers display high resistivity. Preliminary results seem to imply that Ga-related inclusions that produce internal Schottky diodes might be responsible for this effect rather than the presence of deep centers. It is proposed that Ga-related inclusions that produce internal Schottky diodes might possibly be responsible for this effect rather than the presence of deep centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351740
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  • 4
    Electronic Resource
    Electronic Resource
    3-Methylcholanthrene and Phenobarbital Stimulation of Rat Liver RNA Polymerase (1967)
    [s.l.] : Nature Publishing Group
    Nature 214 (1967), S. 281-283 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Male Sprague-Dawley rats weighing 200 g were injected intraperitoneally with either 20 mg of 3-methylcholanthrene dissolved in 2.5 ml. of corn oil, 20 mg of phenobarbital dissolved in saline or with 2.5 ml. of corn oil only. The 3-methylcholanthrene was given 3 h, and the phenobarbital 20 h, before ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/214281a0
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  • 5
    Electronic Resource
    Electronic Resource
    Fifth Source of Jupiter Decametric Radiation (1968)
    [s.l.] : Nature Publishing Group
    Nature 220 (1968), S. 1215-1218 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] In 1964 Bigg1 discovered that the first Galilean satellite, lo, strongly induces decametric emission especially at frequencies above 30 MHz. Fig. 1 shows the relation essentially as determined by Bigg from data obtained by the Boulder radio spectrograph which can detect radiation up to a frequency ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/2201215a0
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  • 6
    Electronic Resource
    Electronic Resource
    Europa and the Decametric Radiation from Jupiter (1968)
    [s.l.] : Nature Publishing Group
    Nature 220 (1968), S. 1218-1222 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Fig. 1 shows the Europa effect for all frequencies of emission between 7 and 40 MHz. Careful examination shows two large irregular patches of emission at the same LCM intercepts as the lo-controlled early source, between80 and 180. The patches are approximately centred at about 100 and 280 along ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/2201218a0
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  • 7
    Electronic Resource
    Electronic Resource
    Low resistance ohmic contacts on nitrogen ion bombarded InP (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2165-2167 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonalloyed Ti/Pt/Au contacts deposited in situ onto nitrogen ion bombarded n-type InP show contact resistivities as low as 3.4×10−6 Ω cm2. Acceleration voltages of 100–300 V and exposure times of 3–11 min were used to remove InP native oxide and produce a shallow (≤300 A(ring)) disordered donor layer on which ohmic contacts were deposited. Electron diffraction patterns matching those of polycrystalline InN were identified in this degenerately doped surface layer, which was further characterized by secondary ion mass spectrometry and ion channeling. Similar layers produced by Ar ion bombardment under the same conditions showed much higher contact resistivities (∼10−4 Ω cm2), indicating that the InN formation is beneficial for contact properties. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112750
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  • 8
    Electronic Resource
    Electronic Resource
    Diffusion of boron, lithium, oxygen, hydrogen, and nitrogen in type IIa natural diamond (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5103-5106 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of boron, lithium, nitrogen, oxygen, and hydrogen into type IIa natural diamond was studied. The diffusion was performed in two steps. First, diffusion of Li and oxygen was performed in nitrogen atmosphere at 860 °C for one hour. The sample was then placed in a hot filament chemical vapor deposition (CVD) growth reactor and diffusion was performed for two hours in hydrogen atmosphere from a boron solid source placed on the surface of the sample. The condition of diffusion were those used routinely during CVD growth. After diffusion, the concentration of Li was of the order of 2×1016 cm−3 at the depth of 0.5 micrometer, and oxygen, nitrogen, and boron were found to be in the range (1–4)×1020 cm−3 at the same depth. The diffusion of hydrogen under conditions specific to CVD growth has also been studied for the first time and was found to be quite strong. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359320
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  • 9
    Electronic Resource
    Electronic Resource
    The influence of hydrogen plasma treatment and proton implantation of electrical properties of AlGaAsSb (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3510-3515 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of hydrogen plasma treatment and 300 keV proton implantation on the electrical properties of AlGaAsSb layers matched to GaSb are studied. It is shown that the hydrogen introduced from a plasma can form electrically neutral complexes with donors and acceptors in this material system. The results can be explained under the assumption that the hydrogen has an acceptor and a donor level in AlGaAsSb and an estimate of the depth of these levels as a function of composition is made. It is also shown that after heavy irradiation of AlGaAsSb with protons the material becomes p type with the hole concentration of about 1016 cm−3, independent of the initial doping level in the starting material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352956
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  • 10
    Electronic Resource
    Electronic Resource
    Depth profiling and secondary ion mass spectrometry relative sensitivity factors and systematics for polymers/organics (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2524-2529 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depth profiles and secondary ion mass spectrometry (SIMS) relative sensitivity factors (RSF) for quantification (inverse relative ion yields) are reported for oxygen ion bombardment and positive secondary ion mass spectrometry and for cesium bombardment and negative secondary ion mass spectrometry measured for implants of more than 40 elements in PMMA/polymethyl methacrylate/Lucite/AZ111, polypyromellitimide/polyimide/Kapton, and epoxy, using magnetic sector SIMS instruments (CAMECA IMS 3f or 4f). The RSFs are plotted versus ionization potential (positive secondary ions) and versus electron affinity (negative secondary ions), and the resulting patterns are compared among themselves and with those for semiconductors reported previously. Charge compensation using electron flooding was employed in most cases for both oxygen (oblique incidence flooding) and cesium (normal incidence flooding) primary beams. Profiles in these low atomic number materials are relatively deep. Crater depths are sometimes difficult to measure; some are distorted and some are not. More work in this area of SIMS quantification and depth profiling in organic polymers appears to be needed, but these results are promising.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353084
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