ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have measured, using secondary-ion mass spectrometry, the (111) random and 〈110〉 channeled profiles for about 45 ions implanted into Hg1−xCdxTe. Ion energies vary from 100 to 700 keV, and ion fluences from 1×1013 to 3×1015 cm−2. The specially preannealed device-quality Hg1−xCdxTe substrates were implanted at room temperature and not annealed after implantation. Ions implanted include 1H(C), 2H(C), He, Li(C), Be(C), B(C), C(C), N(C), O(C), F(C), Na(C), Mg(C), Al(C), Si(C), P(C), S(C), Cl(C), K(C), Ca(C), Ti(C), V, Cr(C), Mn(C), Fe(C), Co(C), Ni, Cu(C), Zn, Ga, Ge, As, Se, Br(C), Kr, Rb, Zr, Mo(C), Ag, In(C), Sn, Sb, Cs, and Ta, where (C) means that 〈110〉 channeled profiles were measured in addition to (111) random orientation profiles. Other ions were implanted but with poor profiling results. We report here implantation range data that include the peak depth Rm, the projected range Rp or first moment μ, the range straggle ΔRp or second moment σ, the third moment or skewness γ1, and the fourth moment or kurtosis β2, obtained from a Pearson IV fitting routine, and the maximum 〈110〉 channeling range. We show what densities and depths can be achieved using 〈110〉 channeled implantation in solid-state recrystallized Hg1−xCdxTe. Values of electronic stopping Se are calculated from the maximum 〈110〉channeling ranges and show the Z1-dependent nature of Se.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.340394
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