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1

Digitale Medien

Hydrogen depth profiles and optical characterization of annealed, proton-implanted n-type GaAs (1985)

Zavada, J. M. ; Jenkinson, H. A. ; Sarkis, R. G. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 58 (1985), S. 3731-3734

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Depth profiles of 300-keV protons implanted in n-type GaAs at room temperature have been obtained using secondary ion mass spectrometry and correlated with optical effects determined by infrared reflectance measurements. The profiles of the implanted hydrogen (1H) have been measured as a function of annealing for temperatures up to 600 °C. These profiles display a major redistribution of the hydrogen atoms with movement beginning at 200 °C and terminating by 700 °C. The hydrogen diffusion into the substrate can be approximated by an Arrhenius process with an activation energy of 0.62 eV and a diffusion constant of 1.54×10−5 cm2/s. The reflectance spectra indicate that while an optically uniform layer is present in the as-implanted specimen, more complicated optical profiles exist in the annealed samples. Annealing at 300 °C causes the layer to nearly double in thickness but higher temperature annealing produces optical profiles similar to the as-implanted state. Qualitatively, these optical changes follow the behavior of the hydrogen depth profiles.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.335637

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2

Digitale Medien

Proton, deuteron, and helium implantation into GaAs and LiNbO3 for waveguide fabrication (1985)

Wilson, R. G. ; Betts, D. A. ; Sadana, D. K. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 57 (1985), S. 5006-5010

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Hydrogen and helium implantation into GaAs, LiNbO3, and other crystals has been shown to produce planar or channel waveguides via defects/damage and/or carrier removal or compensation. We have measured implanted depth distributions of 1H, 2H, and 4He in GaAs and LiNbO3 as functions of ion energy, ion fluence, substrate temperature, and annealing temperature using secondary ion mass spectrometry. We have studied the defect depth distribution for hydrogen-implanted GaAs by transmission electron microscopy. We have determined the lateral spread of 1H and 2H ions implanted into GaAs by varying the angle of implantation; this relates to the increase in width of closely spaced parallel channel waveguides made using patterned masks.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.335275

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3

Digitale Medien

Channeling of aluminum in silicon (1985)

Wilson, R. G. ; Hopkins, C. G.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 57 (1985), S. 4517-4519

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: A systematic study of channeling of aluminum in the silicon crystal is reported. Depth distributions measured by secondary ion mass spectrometry are reported for 40-, 75-, and 150-keV aluminum channeled in the 〈100〉 and 〈110〉 directions of silicon. The profile dependence on alignment angle is shown for 150-keV aluminum in the 〈110〉 of silicon. Aluminum has low electronic stopping in silicon and corresponding deep channeled profiles are observed for aligned implants and deep channeling tails are observed on random implants. The maximum channeling range for 150-keV Al in 〈100〉 silicon is about 2.8 μm and is about 6.4 μm in 〈110〉 silicon. Some ions will reach the maximum channeling range even for 2° misalignment. Many of the deep channeling tails and "supertails'' reported in earlier literature can be explained by the normal channeling of aluminum in silicon.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.335351

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4

Digitale Medien

Depth distributions and damage characteristics of protons implanted in n-type GaAs (1985)

Zavada, J. M. ; Jenkinson, H. A. ; Wilson, R. G. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 57 (1985), S. 2299-2301

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Depth distributions of 300-keV protons implanted in n-type GaAs and characteristics of the associated damage in the crystalline material have been obtained. Range profiles of the implanted 1H ions as a function of substrate implantation temperature have been determined using secondary ion mass spectrometry for fluences of 5×1014 and 5×1015 cm−2. The projected range for the protons was approximately 2.7 μm for the room temperature implants, but a significant rearrangement of the 1H atoms occurred during elevated temperature implantation. While cross-sectional transmission electron microscopy showed no evidence of crystal damage in as-implanted wafers, plan-view measurements revealed platelike damage structures in the surface region (〈 1μm).

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.334328

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