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  • 1
    Electronic Resource
    Electronic Resource
    Pitfalls in the demonstration of epoxy resins (1987)
    Oxford, UK : Blackwell Publishing Ltd
    Contact dermatitis 16 (1987), S. 0 
    Details
    ISSN: 1600-0536
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1600-0536.1987.tb01432.x
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  • 2
    Electronic Resource
    Electronic Resource
    Optical waveguides formed by deuterium passivation of acceptors in Si doped p-type GaAs epilayers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4151-4155 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the use of plasma hydrogenation of Si doped, p-type GaAs crystalline samples to form infrared waveguides through acceptor passivation. Epilayers grown by liquid phase epitaxy were exposed to a deuterium plasma for ninety minutes at three different temperatures. Secondary-ion mass spectrometry (SIMS) analysis indicated that the deuterium concentrations in the crystals after plasma exposure were nearly equal to the acceptor level and extended to depths between 2.0 and 4.0 μm. Reflectivity measurements showed that the epilayers had passivated regions whose thicknesses corresponded to those determined by SIMS analysis. Laser coupling experiments at 1.15 μm showed optical waveguiding in each sample and lowest propagation losses were on the order of 35 dB/cm. At a wavelength of 1.523 μm, only the sample processed at the highest temperature exhibited laser guiding and losses were considerably higher.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350849
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  • 3
    Electronic Resource
    Electronic Resource
    Hydrogen depth profiles and optical characterization of annealed, proton-implanted n-type GaAs (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3731-3734 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depth profiles of 300-keV protons implanted in n-type GaAs at room temperature have been obtained using secondary ion mass spectrometry and correlated with optical effects determined by infrared reflectance measurements. The profiles of the implanted hydrogen (1H) have been measured as a function of annealing for temperatures up to 600 °C. These profiles display a major redistribution of the hydrogen atoms with movement beginning at 200 °C and terminating by 700 °C. The hydrogen diffusion into the substrate can be approximated by an Arrhenius process with an activation energy of 0.62 eV and a diffusion constant of 1.54×10−5 cm2/s. The reflectance spectra indicate that while an optically uniform layer is present in the as-implanted specimen, more complicated optical profiles exist in the annealed samples. Annealing at 300 °C causes the layer to nearly double in thickness but higher temperature annealing produces optical profiles similar to the as-implanted state. Qualitatively, these optical changes follow the behavior of the hydrogen depth profiles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335637
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  • 4
    Electronic Resource
    Electronic Resource
    Depth distributions and damage characteristics of protons implanted in n-type GaAs (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2299-2301 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depth distributions of 300-keV protons implanted in n-type GaAs and characteristics of the associated damage in the crystalline material have been obtained. Range profiles of the implanted 1H ions as a function of substrate implantation temperature have been determined using secondary ion mass spectrometry for fluences of 5×1014 and 5×1015 cm−2. The projected range for the protons was approximately 2.7 μm for the room temperature implants, but a significant rearrangement of the 1H atoms occurred during elevated temperature implantation. While cross-sectional transmission electron microscopy showed no evidence of crystal damage in as-implanted wafers, plan-view measurements revealed platelike damage structures in the surface region (〈 1μm).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334328
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  • 5
    Electronic Resource
    Electronic Resource
    Infrared study of hydrogen- and carbon-implanted heavily doped, n-type GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1936-1945 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study is given of the effect of ion implantation on the carrier density and the infrared dielectric constant of heavily doped, high-carrier density, n-type GaAs as measured by infrared reflection. Hydrogen ions were implanted at 300 keV at room temperature and carbon ions at 380 keV at near-liquid-nitrogen temperature. For H and C ions the effects of the implantation and subsequent annealing from 100 to 550 °C are examined. The 1H ion implantation and annealing results are compared with available SIMS data and with the carrier density profile obtained from capacitance-voltage measurements of a progressively etched sample. The 1H and carrier compensation profiles are clearly related and show a compensated layer ∼3 μm thick for the as-implanted samples. A deeply diffused layer is present after annealing and the depth grows with anneal temperature. After 500 °C annealing the carrier compensation in the diffused layer disappears but the original layer is still compensated. The 12C-implanted sample shows both carrier compensation and substantial damage-related changes in the dielectric constant. Annealing removes the damage-related changes and no compensated diffused layer such as that observed for hydrogen was present. An effective diffusion constant for the hydrogen related defect can be estimated but its value is dependent upon the model used. Different models give Deff=D0effe−Ea/kT with Ea about 1 eV but with D0eff values which are strongly model dependent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336422
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  • 6
    Electronic Resource
    Electronic Resource
    Temperature processing effects in proton-implantedn-type GaAs (1983)
    Springer
    Applied physics 32 (1983), S. 19-25 
    Details
    ISSN: 1432-0630
    Keywords: 40.80 ; 42.82 ; 34
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Characterization of the effects of thermal processing on the optical and electronic properties of proton implantedn-type GaAs is reported in this paper. The thermal processing includes variations in the substrate temperature during implantation and postimplantation thermal annealing. Infrared reflectivity data indicate that the depths to which the optical changes extend in the as-implanted samples are greatest in the cryogenic implants. Carrier concentration profiles derived from capacitance-voltage measurements are shown to have significant differences depending upon processing history. Existence ofn-type surface layers are noted in high fluence level implants.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00626129
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