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  • 1
    Electronic Resource
    Electronic Resource
    Block by LSD of the Increase in Brain Serotonin Turnover induced by Elevated Ambient Temperature (1968)
    [s.l.] : Nature Publishing Group
    Nature 220 (1968), S. 795-796 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Sprague-Dawley (Charles River) male rats weighing 150-250 g were used. Before the experiment the rats were placed in individual cages and kept in a quiet room at 23 C for 4 h. An adaptation period is important for establishing uniformly low baseline levels of 5-HIAA because any alteration in ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/220795a0
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  • 2
    Electronic Resource
    Electronic Resource
    The effect of growth interruption on the properties of InGaAs/InAlAs quantum well structures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 338-340 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of the growth interruption time during the growth of InGaAs/InAlAs quantum well structures is shown to have a significant effect on both the interband transitions, as determined by photoreflectance, and the electrical properties of the as-grown structure. The results show that, for increasing growth interruption time, the quantum well heterointerfaces become more abrupt and the carrier mobility increases, thereby demonstrating that long interruption times are preferable for the growth of high quality rectangular quantum well structures. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120729
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  • 3
    Electronic Resource
    Electronic Resource
    Characteristics of surface acoustic wave propagation in III-V semiconductor quantum well structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5002-5007 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The propagation of surface acoustic waves (SAWs) in AlGaAs/GaAs and InGaAs/InP quantum well structures is modeled using a Laguerre polynomial approach to determine the effects of the quantum well parameters (layer thickness, layer composition, and number of layers) on the induced potential, electric field, particle displacement, and strain. These characteristics show that variations of the electric field within regions of the structure of interest for device applications can be brought about, and are of use for the design of devices based on SAW interactions in quantum well structures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359726
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  • 4
    Electronic Resource
    Electronic Resource
    Analysis of phase shifts due to etching in photoreflectance spectra of a GaAs/AlGaAs single-quantum well structure (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2672-2678 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature photoreflectance measurements of a GaAs/Al0.2Ga0.8As single-quantum well structure showed well defined Franz–Keldysh oscillations in the neighborhood of the GaAs and Al0.2Ga0.8As band-edge energies. That experiment investigated the origin of the Franz–Keldysh oscillations by sequential etching and photoreflectance analysis of the grown layers and showed that the phase of the Franz–Keldysh oscillations shifted as the upper Al0.2Ga0.8As barrier was etched, with eventual phase reversal when roughly half of the upper barrier was removed. Here, these phase shifts are determined accurately using a novel Kramers–Kronig approach and they are interpreted in terms of optical interference effects using both a simple two-ray model and a multiple-reflection treatment incorporating a calculation of the Seraphin coefficients. The results also enable the thickness of the layers removed to be determined. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358734
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  • 5
    Electronic Resource
    Electronic Resource
    Analysis of Franz–Keldysh oscillations in photoreflectance spectra of a AlGaAs/GaAs single-quantum well structure (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6472-6480 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental results are presented for the physical origins of room-temperature photoreflectance features of a AlGaAs/GaAs single-quantum well structure. The spectra exhibit well-defined Franz–Keldysh oscillations which overlap with photoreflectance features due to the quantum well and complicate the determination of the energies of the transitions within the quantum well. The origin of the Franz–Keldysh oscillations are determined using wet chemical etching to selectively remove grown layers down to the substrate. The resulting spectra are presented as a function of etch depth which allows the magnitude of the built-in electric fields to be determined and reveals the location within the quantum well structure where the Franz–Keldysh oscillations originate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359122
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of Ge concentration on the propagation characteristics of SiGe/Si heterojunction waveguides (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2254-2257 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The variation of the modal propagation loss of planar SiGe/Si heterojunction waveguides with Ge concentrations ranging from 1.3% to 10% has been determined for both TE and TM polarizations at wavelengths of 1.15 and 1.523 μm. The results show that at 1.15 μm wavelength the propagation loss increases with increasing Ge concentration due to the band-edge absorption, which dominates the waveguide loss characteristics, while at the wavelength of 1.523 μm it decreases with increasing Ge concentration. The polarization sensitivity is only found at the longer wavelength and is thought to be due to the interaction of the evanescent field at the SiGe/Si interface with the Si substrate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359573
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  • 7
    Electronic Resource
    Electronic Resource
    Photosensitivity of proton implanted germania-doped planar silica structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1207-1210 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented which demonstrate that an absorption peak at a wavelength of 240 nm is produced in germania-doped planar silica structures by the implantation of a dose of 1×1017 cm−2 300 keV protons into a sample heated to 800 °C. This proton implantation induced absorption was found to saturate for a total implanted dose of 1×1017 protons cm−2 and the effect did not increase when multiple energy implants with a dose of 1×1017 protons cm−2 were used. The 240 nm absorption peak was partially removed by exposure to 0.5 J, 10 ns, 249 nm laser pulses for 7 min using a pulse repetition frequency of 50 Hz. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358987
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  • 8
    Electronic Resource
    Electronic Resource
    Optical waveguides formed by deuterium passivation of acceptors in Si doped p-type GaAs epilayers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4151-4155 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the use of plasma hydrogenation of Si doped, p-type GaAs crystalline samples to form infrared waveguides through acceptor passivation. Epilayers grown by liquid phase epitaxy were exposed to a deuterium plasma for ninety minutes at three different temperatures. Secondary-ion mass spectrometry (SIMS) analysis indicated that the deuterium concentrations in the crystals after plasma exposure were nearly equal to the acceptor level and extended to depths between 2.0 and 4.0 μm. Reflectivity measurements showed that the epilayers had passivated regions whose thicknesses corresponded to those determined by SIMS analysis. Laser coupling experiments at 1.15 μm showed optical waveguiding in each sample and lowest propagation losses were on the order of 35 dB/cm. At a wavelength of 1.523 μm, only the sample processed at the highest temperature exhibited laser guiding and losses were considerably higher.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350849
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  • 9
    Electronic Resource
    Electronic Resource
    Study of the electron field emission and microstructure correlation in nanocrystalline carbon thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5671-5675 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystalline carbon thin films were deposited by hot-filament chemical vapor deposition using a 2% concentration of methane in hydrogen. The films were deposited on molybdenum substrates under various substrate biasing conditions. A positive bias produced a continuous flow of electrons from the filament onto the substrate, while a negative bias caused the substrate to be bombarded with positive ions. Films were also grown under no bias, for comparison. Differences in the electron field emission properties (turn-on fields and emitted currents) of these films were characterized. Correspondingly, microstructural differences were also studied, as characterized with atomic force microscopy and Raman spectroscopy. Films grown under electron bombardment showed lower turn-on fields, smoother surfaces, and smaller grains than those grown under ion bombardment or no bias. A correlation between the enhanced emission properties and the nanocrystalline carbon material produced by the low-energy particle bombardment was found through the parameters obtained using spectroscopic ellipsometry modeling. The results confirm the significant role of defects on the electron field emission mechanism. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367873
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  • 10
    Electronic Resource
    Electronic Resource
    The characteristics of optical waveguides fabricated in Y- and Z-cut LiNbO3 by He+ implantation (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 464-465 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the orientation of the LiNbO3 samples on the characteristics of planar waveguides fabricated by He+ implantation are presented. They show that the number of extraordinary modes is the same in Y- and Z-cut samples whereas the Z-cut samples support more ordinary modes than do Y-cut samples. Also the attenuation of each mode is lower in Z-cut material, showing that Z-cut material is more suitable for the fabrication of low loss waveguides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337624
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