Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
77 (1995), S. 1207-1210
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Results are presented which demonstrate that an absorption peak at a wavelength of 240 nm is produced in germania-doped planar silica structures by the implantation of a dose of 1×1017 cm−2 300 keV protons into a sample heated to 800 °C. This proton implantation induced absorption was found to saturate for a total implanted dose of 1×1017 protons cm−2 and the effect did not increase when multiple energy implants with a dose of 1×1017 protons cm−2 were used. The 240 nm absorption peak was partially removed by exposure to 0.5 J, 10 ns, 249 nm laser pulses for 7 min using a pulse repetition frequency of 50 Hz. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.358987
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