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  • 1
    Electronic Resource
    Electronic Resource
    New tilted-poles Wien filter with enhanced performance (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 350-357 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The Wien filter is an E×B deflecting analyzer with the electrostatic field perpendicular to the magnetostatic field. The twofold functions of the Wien filter are as an energy analyzer as well as a mass analyzer. It has very high resolution for paraxial charged-particle beams with V=E/B, the Wien velocity. Two Wien filters, a tilted-poles Wien filter, and a classical parallel-rectangular-poles Wien filter were built and tested for electrons up to 3.5 keV and protons beams of 200 eV. (The tilted-poles Wien filter is a new diagnostic developed by the authors.) The performance of the two is compared, and the tilted-poles Wien filter has superior resolution to the classical Wien filter. Both Wien filters appear to have features useful for high-temperature plasma diagnostics, including simultaneous measurement of energy and mass spectra, and high resolution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140437
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  • 2
    Electronic Resource
    Electronic Resource
    E×B Wien analyzers (abstract) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 1738-1738 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The Wien filter is an E×B deflecting analyzer with the electrostatic field perpendicular to the magnetostatic field. The twofold functions of the Wien filter are as an energy analyzer as well as a mass analyzer. It has very high resolution for paraxial charged particle beams with V=E/B, the Wien velocity. Two Wien filters were built and tested for electrons up to 3.5 keV and protons beams of 200 eV. The performance of the two is compared and appears to have features useful for high-temperature plasma diagnostics including simultaneous measurement of energy and mass spectra and high resolution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140097
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  • 3
    Electronic Resource
    Electronic Resource
    Diffusion of boron, lithium, oxygen, hydrogen, and nitrogen in type IIa natural diamond (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5103-5106 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of boron, lithium, nitrogen, oxygen, and hydrogen into type IIa natural diamond was studied. The diffusion was performed in two steps. First, diffusion of Li and oxygen was performed in nitrogen atmosphere at 860 °C for one hour. The sample was then placed in a hot filament chemical vapor deposition (CVD) growth reactor and diffusion was performed for two hours in hydrogen atmosphere from a boron solid source placed on the surface of the sample. The condition of diffusion were those used routinely during CVD growth. After diffusion, the concentration of Li was of the order of 2×1016 cm−3 at the depth of 0.5 micrometer, and oxygen, nitrogen, and boron were found to be in the range (1–4)×1020 cm−3 at the same depth. The diffusion of hydrogen under conditions specific to CVD growth has also been studied for the first time and was found to be quite strong. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359320
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  • 4
    Electronic Resource
    Electronic Resource
    High quantum efficiency for Pt2Si Schottky-barrier diodes in the vacuum ultraviolet (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7588-7590 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pt2Si Schottky-barrier diodes were found to exhibit excellent photoresponse in the wavelength region of 116.4–221.4 nm when they were operated in the front illumination mode. Quantum efficiencies as high as 220% were achieved, depending on the substrate resistivity used and the Pt2Si film thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356591
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  • 5
    Electronic Resource
    Electronic Resource
    Forced diffusion of impurities in natural diamond and polycrystalline diamond films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5625-5629 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method is proposed for the determination of the state of an impurity (donor, acceptor, or deep level) in semiconductor lattice. To demonstrate the method boron was diffused into type Ia natural diamond under a dc electric field. The concentration and diffusion profiles of boron were affected by the applied field. Boron diffuses as a negative ion since it is an acceptor shallow enough to be partially ionized at the temperature of diffusion. The drift velocity of boron ions at the temperature of diffusion was also estimated. The diffusion of lithium and oxygen from a Li2CO3 source in chemical vapor deposited diamond films was performed under bias at 1000 °C in an argon atmosphere. After diffusion, the concentrations of Li, O, and H in the diamond films were found to be around (3–4)×1019 cm−3. No dependence of these concentrations on the applied bias was observed. It was found that the diffusion of Li goes primarily through grain boundaries, which may explain why it does not depend on the applied voltage. Fluorine was present as an impurity in the dopant source. Its concentration in the films was around (1–2)×1017 cm−3 and did depend on the applied bias, indicating that fluorine may have formed a shallow level in the diamond band gap. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359204
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  • 6
    Electronic Resource
    Electronic Resource
    Plasma diagnostic x-ray tomography system (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 751-754 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A radiation-hardened 60-channel x-ray tomography system has been developed to determine the two-dimensional distribution of x-ray emissivity from magnetically confined plasmas. In order to maximize their field of view, the diode arrays are mounted in re-entrant tubes inside the plasma chamber diagnostic ports. Metal foil vacuum windows serve as x-ray filters and permit the diodes and cables to be at atmospheric pressure. Preamplifiers are mounted at the outside end of the re-entrant tubes. The diode arrays and preamplifiers are protected from the harsh radiation environment by lead shielding. Image reconstruction is done using the harmonic expansion method or the linear algebraic method. For plasmas with some cylindrical symmetry the harmonic expansion method is superior, but for small discrete objects the Cartesian algebraic method is better. Preliminary data from the Missouri Magnetic Mirror plasma with electron cyclotron resonance heating show evidence of a hot electron ring.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142079
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  • 7
    Electronic Resource
    Electronic Resource
    Fast multiline low-Z impurity imaging diagnostic for fluctuation and particle confinement studies : Eight topical conference on high−temperature plasma diagnostics (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 3064-3066 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A system for imaging complete tokamak edge cross sections using radiation from intrinsic low-Z impurities, such as carbon, with a frequency response of 500 kHz and a spatial resolution of 1–4 cm (depending on the thickness of the radiating region) is being developed. The noise level is determined by the electronics and is ≤2% for the full 500 kHz bandwidth and ≤1% for a 100 kHz subset of that bandwidth. Photon noise is 0.3% for the full 500 kHz bandwidth. This diagnostic can be used for studying fluctuations in Prad(λ), Γz, and Te. Additionally it may be useful for studying marfes and detached plasmas, transport and oscillations during pellet injection, and as a fast disruption precursor monitor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141728
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  • 8
    Electronic Resource
    Electronic Resource
    Energy storage of the atomic carbon laser in an electrical discharge (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2637-2639 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental investigation of the atomic carbon laser's energy storage was conducted with a rotating back mirror. The high rotational speed of the mirror allowed the laser cavity to be switched to a high Q configuration for various time delays after the discharge. This study, which combines results from experiments and computer simulations, revealed a short upper laser level lifetime of about 2 μsec. Thus, the lifetime of the upper laser state is too short to account for the delay observed (∼5 msec) in previous experiments on the atomic carbon nuclear-pumped laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335504
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  • 9
    Electronic Resource
    Electronic Resource
    Plasma etched polycrystalline hot-filament chemical vapor deposited diamond thin films and their electrical characteristics (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2827-2829 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Etching of hot-filament, chemical vapor deposited, diamond thin films utilizing low energy ion irradiation was investigated. The films used in this study were boron doped polycrystalline diamond, deposited on p-type (100) oriented silicon substrates. A low voltage dc corona discharge with an oxygen plasma was used to sputter etch the films. Surfaces were investigated by scanning electron microscopy and profilometry. Etch rates were approximately 500 A(ring)/min, depending on the various processing conditions. Characteristics of In/diamond/Si Schottky diodes were used to evaluate the electrical properties of diamond surfaces with various treatments. Results indicate that plasma etching can significantly affect Schottky device characteristics. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112578
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  • 10
    Electronic Resource
    Electronic Resource
    Growth of oriented aluminium nitride films on silicon by chemical vapour deposition (1994)
    Springer
    Journal of materials science 29 (1994), S. 4314-4318 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Aluminium nitride films were grown on silicon substrates using the chemical vapour deposition (CVD) method. The properties of the films were studied by scanning electron microscopy (SEM), atomic force microscope (AFM) measurements, X-ray diffraction and Raman scattering. The resulting films were strongly textured and had a preferential orientation with the c-axis normal to the surface, the Raman spectra showed two peaks at 607 and 653 cm−1 and two large bands at 750 and 900 cm−1 of smaller intensity. Both the macro- and micro-Raman spectra showed the same peaks.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00414216
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