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  • 1
    Electronic Resource
    Electronic Resource
    InAsSb/AlAsSb double-heterostructure diode lasers emitting at 4 μm (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 833-835 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double-heterostructure InAsSb/AlAsSb diode lasers emitting at 4 μm have been fabricated. The laser structure was grown on GaSb substrates by molecular beam epitaxy. The devices exhibit continuous wave operation at temperatures up to 80 K, and pulsed operation up to 155 K. The lowest threshold current density is 33 A/cm2 obtained at 50 K, but the characteristic temperature is only 17 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111029
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  • 2
    Electronic Resource
    Electronic Resource
    The influence of hydrogen plasma treatment and proton implantation of electrical properties of AlGaAsSb (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3510-3515 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of hydrogen plasma treatment and 300 keV proton implantation on the electrical properties of AlGaAsSb layers matched to GaSb are studied. It is shown that the hydrogen introduced from a plasma can form electrically neutral complexes with donors and acceptors in this material system. The results can be explained under the assumption that the hydrogen has an acceptor and a donor level in AlGaAsSb and an estimate of the depth of these levels as a function of composition is made. It is also shown that after heavy irradiation of AlGaAsSb with protons the material becomes p type with the hole concentration of about 1016 cm−3, independent of the initial doping level in the starting material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352956
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  • 3
    Electronic Resource
    Electronic Resource
    Annealing of intimate Au-GaAs Schottky barriers: Thick and ultrathin metal films (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1247-1251 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using valence-band and core-level photoemission spectroscopy (PES) and electrical device measurements, the effects of annealing on Au:n-type (110) GaAs Schottky diodes fabricated in ultrahigh vacuum have been studied. Similiar trends in the annealing-induced changes in the barrier height of Au:n-type GaAs were found for 0.2 and 15 monolayer coverages as determined by PES and for thick film coverages (1000 A(ring)) as determined by current-voltage (I-V) and capacitance-voltage (C-V) measurement techniques. In each case, the barrier height was found to be stable for temperatures between 30 and 200 °C and between 300 and 500 °C; while a gradual decrease in the barrier height was found for annealing temperatures of 200–300 °C. These changes are correlated with the formation of a Au-Ga rich layer at the interface during anneals at 200 to 300 °C. Leakage currents were found to dominate the I-V characteristics in the devices which were annealed above the Au-Ga eutectic temperature. These peripheral leakage currents were eliminated by mesa-etching the devices. This allowed more reliable barrier height determinations using device measurements for higher annealing temperatures than has been previously reported for the Au-GaAs system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334521
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  • 4
    Electronic Resource
    Electronic Resource
    Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5159-5169 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for fabricating controlled Schottky barrier heights to GaAs over the entire band gap is demonstrated. Thin, highly doped semiconductor layers at the metal-semiconductor interface allowed the reproducible control of the effective barrier height on n-type GaAs from near zero (i.e., ohmic behavior at 300 K) to 1.33 eV (the band gap equals 1.43 eV at 300 K) with diode ideality factors 1.02≤n≤1.21. Molecular-beam epitaxy was used to grow GaAs epitaxial layers with in situ deposited Al metal layers, resulting in diodes with nearly ideal electrical and structural characteristics. Electrical characterization by current-voltage (I-V) and capacitance-voltage (C-V) techniques, models for these I-V and C-V characteristics, and structural characterization by high resolution transmission electron microscopy lattice images are presented. Implications of this work for models of Schottky barrier formation are discussed, as well as some applications for these "engineered Schottky barrier diodes.''
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338290
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  • 5
    Electronic Resource
    Electronic Resource
    Single-frequency GaInAsSb/AlGaAsSb quantum-well ridge-waveguide lasers emitting at 2.1 μm (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3271-3272 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ridge-waveguide lasers emitting at ∼2.1 μm have been fabricated from a GaInAsSb/AlGaAsSb quantum-well heterostructure grown on a GaSb substrate by molecular beam epitaxy. The cw threshold current is as low as 29 mA at room temperature, and the maximum cw output power is 28 mW. The lasers operate in a single longitudinal mode which can be continuously tuned without mode hopping over 1.2 nm by changing the heatsink temperature and over 0.8 nm by changing the current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110171
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  • 6
    Electronic Resource
    Electronic Resource
    Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1292-1294 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diode lasers emitting at 2.29 μm have been fabricated from lattice-matched double heterostructures having a GaInAsSb active layer and AlGaAsSb confining layers grown by molecular beam epitaxy on GaSb substrates. For pulsed room-temperature operation these devices have exhibited threshold current densities as low as 1.7 kA/cm2 and differential quantum efficiencies as high as 18% per facet, the highest room-temperature efficiency reported for any semiconductor diode laser emitting beyond 2 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103462
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  • 7
    Electronic Resource
    Electronic Resource
    High-power diode-laser-pumped InAsSb/GaSb and GaInAsSb/GaSb lasers emitting from 3 to 4 μm (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 152-154 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diode-array-pumped GaInAsSb/GaSb and InAsSb/GaSb double heterostructure lasers operated at 85 K yielded 95 mW average and 1.5 W peak power per facet at 3 μm, and 50 mW average and 0.8 W peak power facet at 4 μm. The highest operational temperature was 210 K for the 3-μm quaternary and 150 K for the 4-μm ternary.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111548
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  • 8
    Electronic Resource
    Electronic Resource
    High-power multiple-quantum-well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1154-1156 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first GaInAsSb/AlGaAsSb diode lasers with a quantum-well active region have been demonstrated. These devices, which were grown by molecular beam epitaxy, emit at ∼2.1 μm. For room-temperature pulsed operation of lasers 100 μm wide, threshold current density as low as 260 A/cm2 and differential quantum efficiency up to 70% have been obtained for cavity lengths of 2000 and 300 μm, respectively. One device 100 μm wide and 1000 μm long has operated pulsed at heatsink temperatures up to 150 °C, with a characteristic temperature of 113 K between 20 and 40 °C. For another device of the same dimensions, cw output power up to 190 mW/facet has been achieved at a heatsink temperature of 20 °C. These characteristics represent a dramatic improvement in performance over double-heterostructure GaInAsSb/AlGaAsSb diode lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107630
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  • 9
    Electronic Resource
    Electronic Resource
    Room-temperature cw operation at 2.2 μm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1165-1166 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gain-guided Ga0.84In0.16As0.14Sb0.86/Al0.75 Ga0.25As0.06Sb0.94 double-heterostructure lasers emitting at ∼2.2 μm have been operated cw at heat sink temperatures up to 30 °C. The maximum output powers obtained at 5 and 20 °C were 10.5 and 4.6 mW/facet, respectively. For pulsed operation of broad-stripe lasers 300 μm wide and 1000 μm long, the threshold current density was as low as 940 A/cm2, the lowest room-temperature value reported for diode lasers emitting beyond 2 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105544
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  • 10
    Electronic Resource
    Electronic Resource
    Double-heterostructure diode lasers emitting at 3 μm with a metastable GaInAsSb active layer and AlGaAsSb cladding layers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2474-2476 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double-heterostructure diode lasers emitting at 3 μm have exhibited pulsed operation at temperatures up to 255 K and cw operation up to 170 K, with cw output power of 45 mW/facet at 100 K. The laser structure, grown on GaSb substrates by molecular beam epitaxy, has a metastable GaInAsSb active layer and AlGaAsSb cladding layers. The lowest pulsed threshold current density is 9 A/cm2 obtained at 40 K. The characteristic temperature is 35 K at low temperatures and 28 K above 120 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111601
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