Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 1280-1282
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A novel, generic design for diode-pumped lasers and amplifiers utilizing semiconductor heterostructures has been implemented in the InGaAs/GaAs/AlGaAs material system. The spatial and spectral characteristics of these heterostructures are optimized to provide low output beam divergence, low aspect ratio, high efficiency, and low threshold. A pump-power-limited cw output of 0.58 W was obtained with diode-array pumping, and a peak power of 33 W per facet was achieved with pulsed Ti:Al2 O3 laser pumping. A near-diffraction-limited output beam with a divergence of 14° by 3.4° has been obtained.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107316
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