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  • 1
    Electronic Resource
    Electronic Resource
    HgCdTe dual-band infrared photodiodes grown by molecular beam epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4620-4622 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the demonstration of an all molecular beam epitaxy HgCdTe bias-selectable dual-band infrared photodetector. The mesa device, an n-p-n three layer HgCdTe heterostructure, was in situ doped with arsenic and indium for p- and n-type doping. The device design is similar to a heterostructure floating base transistor. The feasibility of the two-color bias-switchable detector was demonstrated by obtaining backside illuminated spectrally pure dual-band detection at 77 K. Wavelength cutoff (λco) selection to 5.2 μm with 60% quantum efficiency (QE) was obtained by applying a negative bias of −250 meV, and to λco=7.9 μm with 36% QE by applying a positive bias of 250 meV. The current-voltage characteristics of this device can be described in terms of a simple back-to-back diode model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349099
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  • 2
    Electronic Resource
    Electronic Resource
    Molecular-beam epitaxy growth and in situ arsenic doping of p-on-n HgCdTe heterojunctions (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2143-2148 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper we present, results on the growth of in situ doped p-on-n heterojunctions on HgCdTe epilayers grown on (211)B GaAs substrates by molecular-beam epitaxy (MBE). Long wavelength infrared (LWIR) photodiodes made with these grown junctions are of high performance. The n-type MBE HgCdTe/GaAs alloy epilayer in these structures was grown at Ts=185 °C and it was doped with indium (high 1014 cm−3 range) atoms. This epilayer was directly followed by the growth, at Ts=165 °C, of an arsenic-doped (1017–1018 cm−3 ) HgTe/CdTe superlattice structure which was necessary to incorporate the arsenic atoms as acceptors. After the structure was grown, a Hg annealing step was needed to interdiffuse the superlattice and obtain the arsenic-doped p-type HgCdTe layer above the indium-doped layer. LWIR mesa diodes made with this material have 77 K R0A values of 5×103, 81, 8.5, and 1.1 Ω cm2 for cutoff wavelengths of 8.0, 10.2, 10.8, and 13.5 μm, respectively; the 77 K quantum efficiency values for these diodes were greater than 55%. These recent results represent a significant step toward the demonstration of MBE as a viable growth technique for the in situ fabrication of large area LWIR focal plane arrays.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348741
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  • 3
    Electronic Resource
    Electronic Resource
    p-i-n HgCdTe photodiodes grown by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2806-2808 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the successful molecular beam epitaxy (MBE) growth of in situ arsenic- and indium-doped p-i-n HgCdTe double heterostructures. High-performance, short-wavelength, infrared (2.09 μm) photodiodes operating at 300 K have been fabricated with these double heterostructures. The observed current-voltage characteristics and quantum efficiency of these diodes can be explained by assuming that the current components are dominated by generation-recombination currents. These photodetectors exhibit quantum efficiencies of 78%. Growth of this kind of in situ doped structures indicates that the HgCdTe MBE technology has matured to the point where doped HgCdTe multilayer heterostructures can be grown and used to fabricate advanced infrared electronic devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104742
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  • 4
    Electronic Resource
    Electronic Resource
    Minority carrier lifetime and diffusion length in HgTe/CdTe superlattices by molecular beam epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1196-1198 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient minority carrier lifetime and steady state diffusion length measurements have been performed on n-type HgTe/CdTe superlattices grown on CdZnTe(100) substrates. The n-type (100) superlattice sample shows a lifetime of 90–100 ns at 77–160 K which then decreases with increasing temperature down to 50 ns near 300 K. p-type HgTe/CdTe superlattices show normal behavior for temperature-dependent lifetimes. The measured lifetime is approximately 20 ns at 77 K and increases continuously to 85 ns at 300 K. An independent measurement of minority carrier diffusion length in a p-type HgTe/CdTe superlattice has led to an excellent agreement with a transient lifetime value of 66 ns at 200 K. The minority carrier diffusion length in a direction parallel to the interfaces indicates that the lateral transport properties are not much different from the transport properties of bulk HgCdTe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107592
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  • 5
    Electronic Resource
    Electronic Resource
    High-power diode-laser-pumped midwave infrared HgCdTe/CdZnTe quantum-well lasers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 810-812 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diode-array-pumped HgCdTe/CdZnTe broad-stripe quantum-well lasers operated at 88 K yielded 1.3 W peak power and 10 mW average power per facet at 3.2 μm. The highest operation temperature was 154 K, and the characteristic temperature of the threshold was 16 K. The external quantum efficiency was ∼7.5% at ∼80 K and decreased by an order of magnitude at 150 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112239
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  • 6
    Electronic Resource
    Electronic Resource
    HgCdTe double heterostructure injection laser grown by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1022-1024 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: While a variety of light-detecting devices have been made with HgCdTe, little has been done to apply this technology to light-emitting devices. We report here the successful fabrication and operation of the first HgCdTe injection laser. This stripe-geometry double-heterostructure laser was operated under pulsed current at temperatures between 40 and 90 K. At 77 K, the emission wavelength was 2.86 μm with a linewidth of 0.3 meV, and the pulsed threshold current density was 625 A/cm2. The double heterostructure, with a 1.4-μm-thick active layer, was grown and in situ doped by molecular beam epitaxy (MBE). The p+ and n+ confinement layers were doped with arsenic and indium, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106332
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of the dislocation density on minority-carrier lifetime in molecular beam epitaxial HgCdTe (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2718-2720 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoconductive minority-carrier lifetime has been measured as a function of temperature and etch-pit density in n-type HgCdTe grown by molecular beam epitaxy with a composition range x=0.22–0.23 to determine the limiting recombination mechanisms, particularly those related to dislocation density. In the extrinsic region at temperatures T〈77 K, the minority-carrier lifetime is limited by Shockley–Read recombination. Strong correlation between minority-carrier lifetime and dislocation density is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105895
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  • 8
    Electronic Resource
    Electronic Resource
    Planar p-on-n HgCdTe heterostructure photovoltaic detectors (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 976-978 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a process to fabricate planar Hg1−yCdyTe/Hg1−xCdxTe (x〈y) heterostructure photodiodes with the p-on-n configuration. The material used for this demonstration was grown by molecular beam epitaxy. The p-on-n planar devices consist of an arsenic-doped p-type epilayer (y=0.28) on top of a long wavelength infrared n-type epilayer (x=0.225, λ=10 μm). The planar junctions were formed by selective pocket diffusion of arsenic deposited by ion implantation. The detailed analysis of the current-voltage characteristics of these diodes as a function of temperature show that they have high performance and that their dark currents are diffusion limited down to 52 K. The results also show that the R0A values for these devices are highly uniform at 77 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108538
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  • 9
    Electronic Resource
    Electronic Resource
    p-type arsenic doping of Hg1−xCdxTe by molecular beam epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2815-2817 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of in situ As doped Hg1−xCdxTe by molecular beam epitaxy and activation of As at 250 °C is reported. We have used elemental arsenic, As4, as the p-type dopant source. The activation of As was observed in the 1016–1018 cm−3 range after a low temperature annealing step at 250 °C. However, for doping levels above 5×1018 cm−3, we have observed that the As activation efficiency drops. It is speculated at this time that self-compensation and formation of neutral As complexes may limit doping efficiency at very high levels. We also report our data on the structural and electrical characteristics of these As doped p-type layers using secondary ion mass spectroscopy analysis, and Hall effect measurements. An acceptor activation energy of 5.4 meV was obtained based on the dependence of the Hall coefficient on temperature. This value was attributed to singly ionized As located on a Te site (AsTe•) acting as an acceptor. A brief discussion on activation mechanism of As doped p-type HgCdTe material is also presented. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120144
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