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  • 1
    Electronic Resource
    Electronic Resource
    Homoepitaxial growth of GaN using molecular beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2195-2198 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, experimental results are presented for the homoepitaxial deposition of a GaN overlayer onto a bulk single-crystal GaN substrate using molecular beam epitaxy. Transmission electron microscopy shows a superior structural quality of the deposited GaN overlayer when compared to heteroepitaxially grown layers. Photoluminescence shows narrow excitonic emission (3.467 eV) and the very weak yellow luminescence, whereas the bulk substrate luminescence is dominated by this deep level emission. These results show that homoepitaxy of GaN can be used to establish benchmark values for the optoelectronic properties of GaN thin films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363112
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  • 2
    Electronic Resource
    Electronic Resource
    Hollow-anode plasma source for molecular beam epitaxy of gallium nitride : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 905-907 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: GaN films have been grown by molecular beam epitaxy (MBE) using a hollow-anode nitrogen plasma source. The source was developed to minimize defect formation as a result of contamination and ion damage. The hollow-anode discharge is a special form of glow discharge with very small anode area. A positive anode voltage drop of 30–40 V and an increased anode sheath thickness leads to ignition of a relatively dense plasma in front of the anode hole. Driven by the pressure gradient, the "anode'' plasma forms a bright plasma jet streaming with supersonic velocity towards the substrate. Films of GaN have been grown on (0001) SiC and (0001) Al2O3 at 600–800 °C. The films were investigated by photoluminescence, cathodoluminescence, x-ray diffraction, Rutherford backscattering, and particle-induced x-ray emission. The film with the highest structural quality had a rocking curve width of 5 arcmin, the lowest reported value for MBE growth to date. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146834
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  • 3
    Electronic Resource
    Electronic Resource
    Mechanism for nearly ohmic behavior in annealed Au/n-GaAs Schottky diodes (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 711-715 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The origin of the ohmic behavior observed after annealing Au/n-GaAs {110} Schottky diodes was investigated by electron-beam-induced current (EBIC) measurements of diode plan views and cross sections, combined with standard scanning electron microscopy and transmission electron microscopy techniques. The large leakage currents responsible for this behavior arise at the periphery of the deposited gold films, where elongated gold crystallites which lie on the GaAs surface are observed after heat treatment. These crystallites are typically 2–5 μm long, 500–2000 A(ring) wide, and are crystallographically oriented along the GaAs [110] direction. EBIC imaging demonstrated that a space-charge region was present under the peripheral area showing the gold crystallites. Comparison of current collection as measured with EBIC between annealed and unannealed diodes shows a large reduction in current collection under and around the periphery of the annealed diodes. These data allow attribution of the ohmic behavior to a recombination current. Experiments done with overlapping Au evaporations show that recombination on the bare GaAs surface between the observed crystallites surrounding each annealed diode is the main component of this recombination current, and thus of the large leakage current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343543
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  • 4
    Electronic Resource
    Electronic Resource
    Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5159-5169 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for fabricating controlled Schottky barrier heights to GaAs over the entire band gap is demonstrated. Thin, highly doped semiconductor layers at the metal-semiconductor interface allowed the reproducible control of the effective barrier height on n-type GaAs from near zero (i.e., ohmic behavior at 300 K) to 1.33 eV (the band gap equals 1.43 eV at 300 K) with diode ideality factors 1.02≤n≤1.21. Molecular-beam epitaxy was used to grow GaAs epitaxial layers with in situ deposited Al metal layers, resulting in diodes with nearly ideal electrical and structural characteristics. Electrical characterization by current-voltage (I-V) and capacitance-voltage (C-V) techniques, models for these I-V and C-V characteristics, and structural characterization by high resolution transmission electron microscopy lattice images are presented. Implications of this work for models of Schottky barrier formation are discussed, as well as some applications for these "engineered Schottky barrier diodes.''
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338290
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  • 5
    Electronic Resource
    Electronic Resource
    High critical current densities in epitaxial YBa2Cu3O7−δ thin films on silicon-on-sapphire (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2432-2434 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of silicon on sapphire (SOS) as a substrate for YBa2Cu3O7−δ allows the growth of thick (∼4000 A(ring)) films without the thermally induced cracking characteristic of epitaxial films on bulk Si substrate. Epitaxy is sustained and reaction is prevented by an intermediate buffer layer of yttria-stabilized (YSZ). The transport critical current density is as high as 4.6×106 A/cm2 at 77 K, and surface resistance measurements at 4.2 K are reported. Microtwin propagation from Si into YSZ is shown not to occur.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104864
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  • 6
    Electronic Resource
    Electronic Resource
    Annealing of intimate Au-GaAs Schottky barriers: Thick and ultrathin metal films (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1247-1251 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using valence-band and core-level photoemission spectroscopy (PES) and electrical device measurements, the effects of annealing on Au:n-type (110) GaAs Schottky diodes fabricated in ultrahigh vacuum have been studied. Similiar trends in the annealing-induced changes in the barrier height of Au:n-type GaAs were found for 0.2 and 15 monolayer coverages as determined by PES and for thick film coverages (1000 A(ring)) as determined by current-voltage (I-V) and capacitance-voltage (C-V) measurement techniques. In each case, the barrier height was found to be stable for temperatures between 30 and 200 °C and between 300 and 500 °C; while a gradual decrease in the barrier height was found for annealing temperatures of 200–300 °C. These changes are correlated with the formation of a Au-Ga rich layer at the interface during anneals at 200 to 300 °C. Leakage currents were found to dominate the I-V characteristics in the devices which were annealed above the Au-Ga eutectic temperature. These peripheral leakage currents were eliminated by mesa-etching the devices. This allowed more reliable barrier height determinations using device measurements for higher annealing temperatures than has been previously reported for the Au-GaAs system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334521
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  • 7
    Electronic Resource
    Electronic Resource
    Aging of Schottky diodes formed on air-exposed and atomically clean GaAs surfaces: An electrical study (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2006-2010 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this report we show that the application of a large voltage and current stress can significantly change the barrier height of a given metal (Ag,Al,Au,Pd,Cr)/GaAs(110) contact. These changes of barrier height depend on the metal used, the method of fabrication of the diode (air exposed or UHV cleaved), and the intensity and direction of the potential and current during the electrical aging. In particular, the air-exposed Ag diodes exhibit the largest change in the barrier height (∼85 meV) upon aging, while the UHV-cleaved Ag diodes do not exhibit a significant change. In the case of Au, both UHV-cleaved and air-exposed diodes show a small change (∼20 meV). The barrier heights of Pd, Al, and Cr air-exposed diodes do not exhibit an appreciable change upon aging (i.e., 〈10 meV). The changes in barrier height are found to have a very consistent and characteristic logarithmic dependence upon time. Once the electrical aging is stopped, the barrier height is found to recover to near the unaged value. The long time constant of the aging process, the ability of the barrier height to recover after aging, the long time constant of the recovery process, and the acceleration of the recovery process by illumination suggest that the changes in the barrier height which occur upon electrical aging are due to the creation and/or annihilation of deep level traps near the interface. We also report a systematic study of a comparison of barrier height determinations for Ag, Al, Au, Cr, and Pd diodes formed on air-exposed and UHV-cleaved GaAs(110) surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341178
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  • 8
    Electronic Resource
    Electronic Resource
    Observation of two in-plane epitaxial states in YBa2Cu3O7−δ films on yttria-stabilized ZrO2 (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2168-2170 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that two distinctly different in-plane epitaxial states of c-axis oriented YBa2Cu3O7−δ (YBCO) films on (100) yttria-stabilized ZrO2 (YSZ) single-crystal substrates can be produced independently, namely, YBCO [100]//YSZ [100] or YBCO [100]//YSZ [110]. Both in-plane epitaxial relationships can be modeled by matching YBCO and YSZ oxygen sublattices at the film-substrate interface. High critical current densities (Jc), ∼5×105–1×106 A/cm2 at 77 K, are achieved when (approximately-greater-than)90 vol % of either orientation is present. Jc can be degraded nearly four orders of magnitude in films with mixed orientation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104995
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  • 9
    Electronic Resource
    Electronic Resource
    YBa2Cu3O7−δ superconducting films with low microwave surface resistance over large areas (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 520-522 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that in situ off-axis sputtering from a composite target can reproducibly fabricate very high quality YBa2Cu3O7−δ films over large areas of deposition. A significant reduction in the microwave surface resistance, Rs, compared to many previously reported values is found. Rs values at 10 GHz were found to be as low as 20 μΩ at 4.2 K and 450 μΩ at 77 K. A systematic variation of several properties including the transition temperature, critical current density at high magnetic fields, and the c-axis lattice parameter across the 3.8 cm×3.8 cm (14.5 cm2) deposition area was found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104244
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of interfacial contamination on the structure and barrier height of Cr/GaAs Schottky contacts (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 356-358 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of as-deposited and annealed Cr/GaAs Schottky contacts was investigated by high resolution and analytical electron microscopy. The Schottky barrier height for contacts prepared by cleavage and in situ metallization in ultrahigh vacuum was stable upon annealing up to 370 °C in N2. In contrast, the contacts prepared on air-exposed substrates show an increase of the barrier height by 80 meV during annealing in the same range of temperatures. Comparing these two types of contacts, distinct differences in the grain size, presence of an oxide layer at the interface, and change in stoichiometry in the substrate beneath the contact were detected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100968
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