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InAsSb/AlAsSb double-heterostructure diode lasers emitting at 4 μm (1994)

Eglash, S. J. ; Choi, H. K.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 64 (1994), S. 833-835

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Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Double-heterostructure InAsSb/AlAsSb diode lasers emitting at 4 μm have been fabricated. The laser structure was grown on GaSb substrates by molecular beam epitaxy. The devices exhibit continuous wave operation at temperatures up to 80 K, and pulsed operation up to 155 K. The lowest threshold current density is 33 A/cm2 obtained at 50 K, but the characteristic temperature is only 17 K.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.111029

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