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  • 1
    Electronic Resource
    Electronic Resource
    Thermal equilibrium concentrations of the amphoteric dopant Si and the associated carrier concentrations in GaAs (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5376-5384 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Expressions of the thermal equilibrium concentrations of Si in GaAs have been obtained in terms of fundamental constants of the involved materials. Silicon is an amphoteric dopant in GaAs, with four species: a neutral and an ionized shallow donor species occupying Ga sublattice sites, and a neutral and an ionized shallow acceptor species occupying As sublattice sites. The concentration of an ionized Si species is expressed by the concentration of the appropriate neutral species and the GaAs crystal Fermi level or the carrier concentration and the band gap energy level positions. The thermal equilibrium concentrations of the two neutral species are expressed by the relevant Gibbs free energies of formation and the As4 vapor phase pressure in the ambient. Using these equations, the long observed relations between the carrier and Si concentrations in different experiments involving both n- and p-type Si doping produced GaAs are quantitatively explained. A difference of ∼1.55 eV in the effective formation enthalpy between the neutral Si atoms occupying the As and Ga sublattice sites has been identified. Moreover, at high temperatures, the GaAs intrinsic Fermi level energy Ei appears to be higher than the midgap energy Eg/2 by ∼20–80 meV. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371534
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  • 2
    Electronic Resource
    Electronic Resource
    Correlation of refractive index profiles with substitutional hydrogen concentrations in annealed proton-exchanged LiNbO3 waveguides (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2769-2771 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the behavior of the extraordinary refractive index in a set of annealed z-cut proton-exchanged lithium niobate (LiNbO3) substrates by means of optical prism-coupling measurements and numerical simulations. Values of the index as a function of depth have been determined and fitted with a single Gaussian diffusion expression. At 400 °C, the effective index diffusivity Dn of 4.6×10−12 cm−2/s is nearly identical to the diffusivity of substitutional H in these samples. Furthermore, we find a linear relationship between the increase in the extraordinary refractive index and the substitutional H concentration. At a wavelength of 0.6238 μm, the coefficient for this relationship is ∼1.5×10−23 (H cm−3)−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109255
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  • 3
    Electronic Resource
    Electronic Resource
    Analysis of hydrogen diffusion from proton-exchanged layers in LiNbO3 (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 718-720 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen profiles for proton-exchanged layers in Z-cut LiNbO3 were obtained by secondary ion mass spectrometry measurements after annealing at 400 °C for times from 6 to 180 min. To fit the measured hydrogen profiles, it was necessary to use two separate Gaussian diffusion profiles which could be designated as a more slowly diffusing substitutional hydrogen on lithium sites and a more rapidly diffusing interstitial hydrogen. At 400 °C, analysis leads to a substitutional hydrogen diffusion coefficient Ds≈4.6×10−12 cm2/s and an interstitial hydrogen diffusion coefficient Di≈1.5×10−11 cm2/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109938
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