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  • 1
    Electronic Resource
    Electronic Resource
    Crystallographic Data. 188. Aluminum Boride. AlB12 (1960)
    s.l. : American Chemical Society
    Analytical chemistry 32 (1960), S. 296-298 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60158a052
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  • 2
    Electronic Resource
    Electronic Resource
    Thermal stability of W ohmic contacts to n-type GaN (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 278-281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: W was found to produce low specific contact resistance (ρc∼8.0×10−5 Ω cm2) ohmic contacts to n+-GaN (n=1.5×1019 cm−3) with limited reaction between the metal and semiconductor up to 1000 °C. The formation of the β–W2N and W–N interfacial phases were deemed responsible for the electrical integrity observed at these annealing temperatures. No Ga out-diffusion was observed on the surface of thin (500 A(ring)) W contacts even after 1000 °C, 1 min anneals. Thus, W appears to be a stable contact to n+-GaN for high temperature applications. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362816
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  • 3
    Electronic Resource
    Electronic Resource
    The microstructure and electrical properties of nonalloyed epitaxial Au-Ge ohmic contacts to n-GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4773-4780 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure and electrical properties of nonalloyed epitaxial Au-Ge contacts were studied. Ohmic behavior was obtained after a 3 h anneal at 320 °C with the lowest average contact resistance and specific contact resistivity found to be ∼0.28 Ω mm and ∼7×10−6 Ω cm2, respectively. Localized reactions in the form of islands were observed across the surface of the contact after annealing and were composed of Au, Ge, and As, as determined by secondary ion mass spectroscopy (SIMS) imaging and Auger depth profiling. Back side SIMS profiles indicate deep Ge and Au diffusion into the GaAs substrate in the island regions. Ohmic contact behavior was found to depend upon both the kinetics of the reactions (localized reactions and island growth) and the thermodynamics (substantial diffusion of both Au and Ge) of the system. A model describing the coupled Au and Ge in-diffusion with respect to the GaAs substrate is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352089
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  • 4
    Electronic Resource
    Electronic Resource
    A surface modification study of InGaP etched with an electron cyclotron resonance source at variable microwave powers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3286-3289 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Etch-induced surface modifications, utilizing an electron cyclotron resonance source, have been studied as a function of controllable etch parameters. InGaP was etched with BCl3 at a constant substrate temperature (100 °C) and bias voltage (−145 V) using microwave powers varying between 250 and 1000 W. The surface morphology, residual etch damage, and surface stoichiometry were strongly influenced by changes in ion flux. The etch-induced lattice damage and surface smoothness increased as the ion energy was elevated. Low ion flux etching resulted in an In-enriched P-depleted surface suggesting nonuniform desorption of InClx which gave rise to the surface roughness observed at the low microwave powers. The smooth surfaces, achieved at the higher microwave power levels, were attributed to either efficient sputter-assisted desorption of the InClx etch products or to InClx desorption via plasma-induced surface heating. Results of this study demonstrate that etching at microwave powers between 500 and 750 W induce low residual damage and smooth surfaces while maintaining a reasonable etch rate for device processing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361227
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  • 5
    Electronic Resource
    Electronic Resource
    A NEW SERIES OF “HEXAGONAL FERRITE” STRUCTURES (1963)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 67 (1963), S. 957-958 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100798a528
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  • 6
    Electronic Resource
    Electronic Resource
    Biaxial and uniaxial stress in gallium arsenide on silicon: A linear polarized photoluminescence study (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 369-371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed anisotropic behavior of the polarization of low-temperature photoluminescence from thick gallium arsenide grown on silicon substrates. The identification of the observed transitions was obtained from analysis of the selection rules, the temperature dependence of the feature intensities, and the transition energies. We find that the low-temperature doublet peaks are due to the emissions from two regions of material experiencing two different kinds of stress, one being biaxial and the other uniaxial. The anisotropy is due to the preferential direction created by parallel microcracks.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347147
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  • 7
    Electronic Resource
    Electronic Resource
    Growth of HgBa2Ca2Cu3O8+δ thin films on LaAlO3 substrates using fast temperature ramping Hg-vapor annealing (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2565-2567 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fast temperature ramping Hg-vapor annealing (FTRA) process has been used for growth of superconducting Hg-based cuprate thin films on (100) LaAlO3 substrates. The film/substrate interface chemical reactions and the formation of a CaHgO2 impurity phase have been effectively reduced with adoption of the FTRA process. A zero-resistance superconducting transition temperature of 128 K and critical current densities of up to 1.4×106 A/cm2 at 77 K and 2.5×105 A/cm2 at 110 K and zero field have been obtained. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116185
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  • 8
    Electronic Resource
    Electronic Resource
    Comparison of PdGeTiPt and NiGeAu ohmic contacts to n-GaAs and PdGeTiPt and TiPd contacts to p+-GaAs (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1723-1729 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: NiGeAu and PdGeTiPt ohmic contacts to n-GaAs and TiPd and PdGeTiPt ohmic contacts to p+-GaAs are examined by comparing their contact resistances, chemical intermixing as determined by Auger electron microscopy, interface structure as determined by transmission electron microscopy, and surface roughness as determined by surface profiling all measured as a function of annealing time and temperature. The n-PdGeTiPt contact annealed for short times, ≤15 s, and at low temperatures, ≤395 °C, was superior to the NiGeAu contact because it had a comparable contact resistance, less interface mixing, better lateral homogeneity, and a smoother surface. However, its contact resistance increased substantially with the annealing time and temperature, whereas the NiGeAu contact was relatively unaffected. For all annealing times and temperatures except the one at 550 °C, the TiPd contact to p+ GaAs was superior as it had a lower contact resistance and a comparable amount of interface intermixing, lateral homogeneity, and surface roughness. However, it had a complete chemical breakdown at 550 °C, whereas the PdGeTiPt contact resistance remained relatively stable.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365973
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  • 9
    Electronic Resource
    Electronic Resource
    AlN as an encapsulate for annealing SiC (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 8010-8015 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlN films grown by either organometallic vapor phase epitaxy (OMVPE) or pulsed laser deposition (PLD) can be used to encapsulate SiC when heated in an argon atmosphere at temperatures at least as high as 1600 °C for times at least as long as 30 min. The coverage of the AlN remains complete and the AlN/SiC interface remains abrupt as determined by Auger electron spectroscopy. However, considerable atomic movement occurs in the AlN at 1600 °C, and holes can form in it as the film agglomerates if there are large variations in the film thickness. Also, the SiC polytype near the surface can in some instances be changed possibly by the stress generated by the epitaxial AlN film. Using x-ray diffraction measurements, we also found that, during the 1600 °C anneal, grains with nonbasal plane orientations tended to grow at the expense of those with basal plane orientations in the OMVPE films, whereas grains with only the basal plane orientation tended to grow in the PLD films. However, there is no indication that the type of grain growth that is dominant affects the film's ability to act as an encapsulate. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367893
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  • 10
    Electronic Resource
    Electronic Resource
    Shallow angle lapping of III-V semiconductor thin layer structures by an ion beam/chemical etching technique (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1041-1043 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Layer thicknesses of 〈2 nm have been resolved in GaAs-AlGaAs superlattice structures using a novel method involving the chemical etching of the shallow lapped area surrounding an ion beam sputter crater formed after Auger electron spectroscopy depth profiling. This method can be used to measure layer thickness variations across a wafer of a nominal 15 nm InGaAs layer in a pseudomorphic high electron mobility transistor. It can also be used to probe interlayer lattice mixing at selected areas on the wafer, for example, near an ohmic contact.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109828
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