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  • 1
    Electronic Resource
    Electronic Resource
    Detection of biomolecules on surfaces using ion-beam-induced desorption and multiphoton resonance ionization (1991)
    s.l. : American Chemical Society
    Analytical chemistry 63 (1991), S. 1947-1953 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00018a010
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  • 2
    Electronic Resource
    Electronic Resource
    Electronic and nuclear effects in ion-induced desorption from NaCl{100} (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 3298-3305 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Multiphoton resonance ionization (MPRI) spectroscopy has been employed to investigate the ejection mechanisms of neutral and ionic particles from an ion-bombarded NaCl{100} single crystal. The results are used to reveal the similarities and the differences between ion bombardment and electron irradiation of alkali halides. The mass spectra of neutral species and positive and negative ions have been measured. The yield of Na+ ions is found to be two orders of magnitude higher than in measurements with electron bombardment. It is suggested that the secondary ions are created by direct emission from the collision cascade. The ejection of neutral Na atoms is observed to be very sensitive to the temperature of the target, the angle of incidence, and the state of the surface as determined by the time-of-flight (TOF) measurements. In particular, it is found that most of the neutral Na atoms are emitted with thermal energies, which indicates that desorption via electronic transitions dominates over ejections from collision cascades. The relative yield of the collisional component to the thermal component is found to vary significantly as the surface structure is modified. This investigation emphasizes the importance of measurements with low incident-ion dose which allows one to decouple the single ion/surface interaction from the accumulative effect of ion-induced surface modifications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461975
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  • 3
    Electronic Resource
    Electronic Resource
    Improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2652-2657 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ni/WSi/Ti/Pt Ohmic contacts to n-SiC were investigated as a function of annealing temperatures up to 1000 °C. Annealing at temperatures between 950 and 1000 °C yielded excellent Ohmic behavior. At these temperatures the contact–SiC interface was smooth, defect free, and characterized by a narrow Ni2Si reaction region. The annealed contacts possessed atomically smooth surface morphologies and exhibited minimal contact expansion. The residual carbon, resultant from SiC decompositon and reaction with Ni to form Ni2Si, was constrained by reaction with the WSi and Ti layers forming carbide phases of W and Ti spatially distant from the metal semiconductor interface. Our results demonstrate that the Ni/WSi/Ti/Pt composite Ohmic contact maintains the desirable electrical properties associated with Ni contacts and possesses excellent interfacial, compositional, and surface properties which are required for reliable high power and high temperature device operation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287776
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  • 4
    Electronic Resource
    Electronic Resource
    Role of Ge on film quality of SiC grown on Si (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 668-671 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We find that the incorporation of Ge into SiC during the metalorganic chemical vapor deposition growth process improves the crystalline quality of SiC films grown on Si (111) substrates at 1000 °C. Secondary ion mass spectroscopy results indicate that Ge does not act as a surfactant, but rather it incorporates throughout the entire film. Transmission electron microscopy results show that high quality, single crystalline SiC films of up to 80 nm thickness are repeatably obtained for GeH4 flow rates ranging from 20 to 30 sccm. Higher GeH4 flow rates induce twinning and result in a reduced growth rate and increased surface roughness. Lower GeH4 flow rates result in polycrystalline and/or amorphous-like SiC films similar to what is normally obtained at such a low growth temperature. We discuss the role of Ge during growth and how its presence in the reactor during Si substrate carbonization results in higher quality SiC films than normally achieved for growth temperatures of 1000 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1425433
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  • 5
    Electronic Resource
    Electronic Resource
    AlN as an encapsulate for annealing SiC (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 8010-8015 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlN films grown by either organometallic vapor phase epitaxy (OMVPE) or pulsed laser deposition (PLD) can be used to encapsulate SiC when heated in an argon atmosphere at temperatures at least as high as 1600 °C for times at least as long as 30 min. The coverage of the AlN remains complete and the AlN/SiC interface remains abrupt as determined by Auger electron spectroscopy. However, considerable atomic movement occurs in the AlN at 1600 °C, and holes can form in it as the film agglomerates if there are large variations in the film thickness. Also, the SiC polytype near the surface can in some instances be changed possibly by the stress generated by the epitaxial AlN film. Using x-ray diffraction measurements, we also found that, during the 1600 °C anneal, grains with nonbasal plane orientations tended to grow at the expense of those with basal plane orientations in the OMVPE films, whereas grains with only the basal plane orientation tended to grow in the PLD films. However, there is no indication that the type of grain growth that is dominant affects the film's ability to act as an encapsulate. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367893
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