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  • 1990-1994  (22)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    High-speed modulation and nonlinear damping effect in InGaAs/GaAs lasers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2476-2478 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high-speed modulation characteristics of ridge waveguide InGaAs/GaAs strained quantum well lasers have been investigated. The lasers have bandwidth of 12 GHz at 21 mW of output power. The differential gain coefficient, the nonlinear damping factor (κ factor) and the gain suppression coefficient (ε) are found to be 6.4 × 10−16 cm2, 0.6 ns and 6.2 × 10−17 cm3, respectively. The above differential gain coefficient and κ factor for InGaAs/GaAs strained quantum-well lasers are a factor of 2 larger than that for unstrained InGaAs/InP quantum-well lasers. The ε value for these strained and unstrained quantum-well lasers are comparable.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349405
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    (GaAs)m(AlAs)n short-period superlattice quantum-well lasers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2085-2088 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and performance characteristics of (GaAs)3/(AlAs)1 short-period superlattice (SPS) quantum-well lasers emitting at 737 nm. The SPSs consists of eight periods of 3 and 1 monolayers of GaAs and AlAs, respectively. The (GaAs)m/(AlAs)n SPSs have many advantages over their equivalent AlGaAs alloy counterparts. The broad-area threshold current density, Jth, for 500-μm-long lasers is 510 A cm−2. The 500-μm-long ridge waveguide lasers have a threshold current of 48 mA with a characteristic temperature of 68 K in the temperature range 19–60 °C. The external differential quantum efficiency near threshold is 0.58 mW/mA/facet. The devices lase in a single mode with spectral width within the resolution limit of the spectrometer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353155
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    A photoluminescence study of hydrogenated GaAs grown on an InP substrate by metalorganic chemical vapor deposition (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 902-905 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of hydrogenation on the low-temperature (5 K) photoluminescence properties of GaAs grown on InP substrate by metalorganic chemical vapor deposition are investigated. An emission band at ∼1.4 eV originating from the GaAs/InP interfacial region shows a 30-fold increase in intensity relative to the GaAs band-edge emission after exposure to hydrogen plasma for 30 min at 250 °C. This improvement in intensity is attributed to hydrogen passivation of defects at the heterointerface caused by the large (≈4%) lattice mismatch between GaAs and InP. Annealing the hydrogenated sample at 350 °C nullifies the passivation effect. Further, the 1.4-eV band shifts to higher energy on annealing the sample in the temperature range 150–450 °C with the hydrogenated sample exhibiting a larger shift than the untreated sample. It is suggested that the annealing-induced peak shift arises due to modification of the interface and that it is greater in the hydrogenated sample compared to the untreated sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346757
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Carbon-doped impurity induced layer disorder 0.98 μm lasers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 590-592 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated high power carbon-doped InGaAs/AlGaAs lasers using an impurity-induced layer disordering process to define the active region. The advantage of carbon doping is that it exhibits significantly lower diffusivity compared to other p-type dopants, thereby avoiding displacement of the p-n junction, even at the high temperatures and long diffusion times required by the disordering process. Secondary ion mass spectrometry (SIMS) measurements before and after Si diffusion show the p-n junction position to be unchanged during processing. The carbon was introduced using CCl4 as an extrinsic precursor, giving improved control over doping levels and ternary growth conditions that is not available with intrinsic carbon doping. Thresholds of 20 mA and slope efficiencies of 0.44 mW/mA at 25 °C were obtained for lasers with cavity lengths of 500 μm and coated facets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357048
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Hydrogen in carbon-doped GaAs grown by metalorganic molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2561-2563 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic profiles show that hydrogen is incorporated in GaAs:C that has been grown by metalorganic molecular beam epitaxy. The hydrogen concentration has been found to be about 5% of the carbon concentration for our growth conditions. An infrared absorption study shows that this hydrogen is involved in stable C-H complexes. At the lower C concentrations (〈1019 cm−3) the CAs-H complex is the dominant species involving C and H. At higher C concentrations new complexes involving C and H appear.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103817
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Monolithic integration of GaAs and In0.2Ga0.8As lasers by molecular beam epitaxy on GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2698-2700 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective area molecular beam epitaxial regrowth of In0.2Ga0.8As lasers through dielectric masks between GaAs laser stripes on a GaAs substrate has been used for the first time to monolithically integrate these two lasers emitting near 1.0 and 0.85 μm, respectively. During regrowth, GaAs laser stripes were protected under a dielectric mask over which polycrystalline material grew, which was later chemically etched away during the fabrication process. The lasers are of the ridge waveguide type and have threshold currents in the 30–35 mA range for cleaved, uncoated facets at room temperature and a T0 value of 100 K. The overall performance characteristics of these lasers selectively regrown on dielectric coated wafers were comparable to lasers grown over a bare substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104787
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Hydrogenation of GaAs-on-InP (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 887-889 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Incorporation of atomic hydrogen into heteroepitaxial Si-doped GaAs layers grown directly on InP substrates by organometallic vapor phase epitaxy produces substantial increases in the reverse bias breakdown voltage of TiPtAu Schottky diodes fabricated on the GaAs-on-InP. Plasma hydrogenated diodes annealed at 400 °C to restore the electrical activity of the passivated shallow donors have reverse breakdown voltages (VB) of ∼6.5 V compared to 4.5 V for untreated samples. The increases in VB are stable to 500 °C annealing for 5 min. Atomic profiling of deuterated samples showed substantial outdiffusion of deuterium from the GaAs at 600 °C, with increasing accumulation at the heterointerface. The deuterium in this disordered region after 600 °C annealing is in a relatively immobile, electrically inactive state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103394
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  • 8
    Electronic Resource
    Electronic Resource
    Temperature dependence of threshold of strained quantum well lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1125-1127 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of threshold current of strained quantum well lasers is analyzed both experimentally and theoretically. The measurements are performed on ridge waveguide In0.2Ga0.8As/GaAs multiquantum well lasers emitting near 1 μm. The carrier densities at threshold of these lasers are measured using very short current pulse injection. A simplified calculation of the radiative, nonradiative recombination rates and the relationship between gain and carrier density in strained quantum well lasers is described. The results of the calculation are compared with experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104391
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Hydrogen passivation of Si δ-doped GaAs grown by molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2928-2930 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen passivation of Si δ-doped GaAs grown by molecular beam epitaxy is studied. Just as in uniformily Si-doped GaAs, exposure of the δ-doped material to a low frequency (30 kHz) hydrogen plasma at 250 °C for 30 min deactivates the Si donors in the δ spikes. For samples with Si doping of (1–6)×1018 cm−3, carrier concentration in the spikes decreased by nearly three orders of magnitude following hydrogenation. Secondary-ion mass spectrometric analysis of deuterated samples confirmed trapping of deuterium in the Si-doped spikes. Consistent with the deactivation of Si donors following hydrogenation, changes were observed in the near-band edge luminescence spectrum at 4.2 K, which showed in the hydrogenated sample the absence of Burstein–Moss shift that was observed in the as-grown sample. This hydrogen-induced passivation of Si donors in the δ spikes can be of benefit in selectively deactivating donor atoms in device applications, and also provide a method for tailoring the hydrogen distribution in an epitaxial structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103733
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Monolithic hybrid mode-locked 1.3 μm semiconductor lasers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 111-113 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the first results of hybrid mode locking combining both active and passive mode locking of a semiconductor laser. These functions are integrated into a monolithic device with a 1.3 μm GaInAsP gain region, an active waveguide, and a saturable absorber. The devices have low threshold currents, and exhibit hysteresis in their light/current characteristics. The long integrated waveguides allow mode locking at a repetition rate of 15 GHz without the need for an external cavity. Pulse widths as short as 1.4 ps have been demonstrated using the combined effects of active and passive mode locking.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103046
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    Paper (German National Licenses)
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