ISSN:
1476-4687
Source:
Nature Archives 1869 - 2009
Topics:
Biology
,
Chemistry and Pharmacology
,
Medicine
,
Natural Sciences in General
,
Physics
Notes:
[Auszug] The narrowest feature on present-day integrated circuits is the gate oxide—the thin dielectric layer that forms the basis of field-effect device structures. Silicon dioxide is the dielectric of choice and, if present miniaturization trends continue, the projected oxide thickness by 2012 ...
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1038/21602
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