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  • 1
    Electronic Resource
    Electronic Resource
    Tb3+→Ce3+ energy transfer in Tb3+:Ce3+:YAG single crystalsa) (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 82 (1985), S. 3078-3082 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: An energy transfer from 5D3 and 5D4 levels of Tb3+ to 2D3/2 state of Ce3+ in Ce3+:Tb3+:YAG was studied using time resolved spectroscopy. It was found that the transfer from the Tb3+(5D3) level proceeds via (d–d) interaction and the critical distance is 18 A(ring). The transfer from Tb3+(5D4) state was consistent with the (d–d) interaction and with the critical distance of 15.4 A(ring), but could also be described in the framework of (d–q) interaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.448256
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  • 2
    Electronic Resource
    Electronic Resource
    Growth temperature dependence of the Si(001)/SiO2 interface width (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 748-750 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth temperature dependence of the thin thermally oxidized Si(001)/SiO2 interface width was studied using synchrotron x-ray diffraction. Nine samples with oxide thickness of about 100 A(ring) were studied, with growth temperatures ranging from 800 to 1200 °C. The oxides were prepared by rapid thermal oxidation. We found that interfacial roughness decreases linearly with increasing growth temperature, with a measured interface width of 2.84 A(ring) for the sample grown at 800 °C, and 1.76 A(ring) when grown at 1200 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111054
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  • 3
    Electronic Resource
    Electronic Resource
    Nitrogen content of oxynitride films on Si(100) (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3473-3475 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The absolute nitrogen concentration in SiOxNy/Si films grown by rapid thermal oxidation in N2O has been determined by nuclear reaction analysis. Compared with conventional surface analysis methods, i.e., Auger electron spectroscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry, the nuclear reaction 14N(d,α)12C provides more accurate depth profiles of 14N due to the quantitative nature of the technique and its high sensitivity, ∼6.0×1013 atoms cm2. Silicon oxynitride films prepared under various conditions, specifically different growing temperatures and times, were analyzed. Nitrogen is observed to accumulate in a narrow region in the oxynitride (within (approximately-less-than)2.5 nm) close to the interface; the total amount of nitrogen increases with increasing temperature and growth time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111948
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  • 4
    Electronic Resource
    Electronic Resource
    Kinetic smoothening: Growth thickness dependence of the interface width of the Si(001)/SiO2 interface (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4746-4749 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using x-ray diffraction techniques, we measure the root-mean-square width of the buried crystalline/amorphous Si(001)/SiO2 interface, as a function of oxide thickness. We find that the interface width decreases with increasing oxide thickness; the oxide growth process kinetically smoothens the buried interface. We also find a difference between the rate of smoothing for wet and dry oxides. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359410
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  • 5
    Electronic Resource
    Electronic Resource
    Mechanically and thermally stable Si-Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 745-751 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Traditional techniques for growing Si-Ge layers have centered around low-temperature growth methods such as molecular-beam epitaxy and ultrahigh vacuum chemical vapor deposition in order to achieve strain metastability and good growth control. Recognizing that metastable films are probably undesirable in state-of-the-art devices on the basis of reliability considerations, and that in general, crystal perfection increases with increasing deposition temperatures, we have grown mechanically stable Si-Ge films (i.e., films whose composition and thickness places them on or below the Matthews–Blakeslee mechanical equilibrium curve) at 900 °C by rapid thermal chemical vapor deposition. Although this limits the thickness and the Ge composition range, such films are exactly those required for high-speed heterojunction bipolar transistors and Si/Si-Ge superlattices, for example. The 900 °C films contain three orders of magnitude less oxygen than their limited reaction processing counterparts grown at 625 °C. The films are thermally stable as well, and do not interdiffuse more than about 20 A(ring) after 950 °C for 20 min. Therefore, they can be processed with standard Si techniques. At 900 °C, the films exhibit growth rates of about 15–20 A(ring)/s. We have also demonstrated the growth of graded layers of Si-Ge, and have determined that a strain gradient exists in these layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347360
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  • 6
    Electronic Resource
    Electronic Resource
    High-quality homoepitaxial silicon films deposited by rapid thermal chemical vapor deposition (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2558-2560 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxial Si films have been deposited by rapid thermal chemical vapor deposition (RTCVD), a growth technique based on the combination of rapid thermal annealing lamps and a chemical vapor deposition chamber. The low thermal mass of the system allows the substrate to be heated and cooled rapidly, and to be held at temperature for short periods (seconds) of time, thereby allowing the growth of thin films. Si films have been grown epitaxially at temperatures between 600 and 900 °C. At 800 °C growth temperature, films with total C and O impurities less than 20 ppm, and defect densities less than 102 cm−2, have been grown. Finally, RTCVD and molecular-beam epitaxy have been compared with respect to the growth of Si-based structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342782
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  • 7
    Electronic Resource
    Electronic Resource
    Structural characterization of Ti-Si thin-film superlattices (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3527-3531 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of amorphous/polycrystalline Ti layers alternating with amorphous Si have been grown on room-temperature {001} Si substrates by electron beam evaporation. Cross-section transmission electron microscopy of these films indicates that the deposition results in the formation of ultrathin superlattice layers with no cumulative roughening and with atomically abrupt interfaces. The crystallinity of the layers containing Ti is found to depend on the layer thickness. For thicknesses ≤20 A(ring) they appear amorphous, whereas layers thicker than ∼40 A(ring) consist of polycrystalline hexagonal Ti grains exhibiting a (0001) preferred orientation parallel to the interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337606
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  • 8
    Electronic Resource
    Electronic Resource
    Excimer laser-induced deposition of InP: Crystallographic and mechanistic studies (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2022-2035 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InP thin films have been deposited on several types of substrates via 193-nm excimer laser-induced photochemical decomposition of (CH3)3In and P(CH3)3 gas-phase precursors. The characteristics of the deposited films are studied over a wide range of conditions. A photochemical model is proposed which explains the stoichiometry and rate at which the film deposits. Approximate fluences are given for the onset of (in order of increasing fluence) In-precursor photochemistry, P-precursor photochemistry, CHx photochemistry, laser-induced crystallization, and laser damage. Crystallinity of InP films deposited on (100) InP substrates has been studied by scanning electron microscopy, transmission electron microscopy, and Rutherford backscattering spectroscopy. Films range from amorphous to epitaxial, depending upon conditions (most notably fluence incident on the substrate). The best film deposited at ∼0.1 J/cm2 and at a steady-state temperature of only ∼320 °C had a backscattering spectrum indistinguishable from that of the substrate single crystal. To our knowledge, this is the first report of a 100% photochemically-induced deposition of an epitaxial, III-V compound semiconductor thin film (i.e., no growth in the absence of light), and also the first report of an epitaxial InP film deposited from organometallic precursors at a steady-state temperature below the incongruent decomposition temperature of InP (∼350 °C).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336011
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  • 9
    Electronic Resource
    Electronic Resource
    Study of MBE growth of GexSi1−x on {111} vicinal surfaces of Si substrates (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1860-1863 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GexSi1−x thin films were grown by molecular beam epitaxy on Si substrates which were purposely miscut ∼3° off the (111) face, toward the [011] pole. Rutherford backscattering channeling angular scans show that the miscut causes the Ge-rich alloy films to grow with an apparent crystallographic tilt relative to the substrate. Transmission electron microscopy micrographs reveal that these films contain many slip-induced stacking faults along a preferential direction. These results are explained in terms of a difference in the magnitude of the resolved shear stress, caused by the lattice mismatch and the 3° miscut.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336305
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  • 10
    Electronic Resource
    Electronic Resource
    ArF excimer-laser-stimulated growth of polycrystalline GaAs thin films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1410-1414 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of GaAs thin films by a laser photodecomposition process is reported. Ga(CH3)3 and As(CH3)3 mixtures are photolyzed above (100) Si and GaAs substrates by a 193-nm argon fluoride excimer laser beam directed normal to the substrate surface. Gas-phase products diffuse to, and stick on the surface where further laser irradiation leads to the formation of polycrystalline GaAs, with grain sizes between ∼20 and 2000 A(ring). Deposited films contain ∼1–3 at. % carbon, as determined by Auger electron spectroscopy. Surface irradiation by the transmitted beam improves the optical constants of the film to values approaching bulk GaAs, but annealing is not sufficient to promote epitaxial growth at fluences as high as 70 mJ/cm2, for average substrate temperatures up to 400 °C. Laser irradiation of the GaAs substrates exposed to BCl3 or As(CH3)3 immediately prior to deposition removes the native oxide and carbon contamination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338120
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