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  • 1
    Electronic Resource
    Electronic Resource
    Nitrogen content of oxynitride films on Si(100) (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3473-3475 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The absolute nitrogen concentration in SiOxNy/Si films grown by rapid thermal oxidation in N2O has been determined by nuclear reaction analysis. Compared with conventional surface analysis methods, i.e., Auger electron spectroscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry, the nuclear reaction 14N(d,α)12C provides more accurate depth profiles of 14N due to the quantitative nature of the technique and its high sensitivity, ∼6.0×1013 atoms cm2. Silicon oxynitride films prepared under various conditions, specifically different growing temperatures and times, were analyzed. Nitrogen is observed to accumulate in a narrow region in the oxynitride (within (approximately-less-than)2.5 nm) close to the interface; the total amount of nitrogen increases with increasing temperature and growth time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111948
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  • 2
    Electronic Resource
    Electronic Resource
    Quantum-well intermixing for optoelectronic integration using high energy ion implantation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3697-3705 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The technique of ion-induced quantum-well (QW) intermixing using broad area, high energy (2–8 MeV As4+) ion implantation has been studied in a graded-index separate confinement heterostructure InGaAs/GaAs QW laser. This approach offers the prospect of a powerful and relatively simple fabrication technique for integrating optoelectronic devices. Parameters controlling the ion-induced QW intermixing, such as ion doses, fluxes, and energies, post-implantation annealing time, and temperature are investigated and optimized using optical characterization techniques such as photoluminescence, photoluminescence excitation, and absorption spectroscopy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359948
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  • 3
    Electronic Resource
    Electronic Resource
    Defect diffusion in ion implanted AlGaAs and InP: Consequences for quantum well intermixing (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2367-2371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAs/GaAs/AlGaAs and InGaAs/InGaAsP/InP laser structures, with InGaAs quantum wells approximately 1.85 μm beneath the surface, were implanted with ions having energies up to 8.6 MeV. Intermixing of the quantum wells, after rapid thermal annealing, was monitored through changes in the energy, linewidth, and intensity of the photoluminescence peak from the quantum wells. Where the defects had to diffuse primarily through Al0.71Ga0.29As, these quantities correlate strongly, for short anneal times, with calculated vacancy generation and ion deposition at the depth of the quantum well prior to annealing. This suggests that the defect diffusion length in the AlGaAs and/or GaAs is quite low. For diffusion primarily through InP, the photoluminescence data correlated well with the calculated total number of vacancies created in the sample, suggesting that defect diffusion is very efficient in InP. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360157
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  • 4
    Electronic Resource
    Electronic Resource
    Argon incorporation in Si(100) by ion bombardment at 15–100 eV (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7101-7106 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Argon incorporation in Si(100) by low energy ion bombardment has been studied by polar angle dependent x-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy. The bombardment was performed at 15, 20, and 100 eV in an ultrahigh vacuum chamber where a mass-separated argon ion beam with an energy spread of less than 1 eV was directed to the target. Both the argon penetration depth and incorporation probability were found to increase with bombardment energy. With a fluence of 2×1017/cm2, most of the incorporated argon was located within 20 A(ring) of the target surface for the 100 eV bombardment and within 10 A(ring) for the 15 eV bombardment. In all cases, the argon depth distribution reached a maximum and then declined. At this fluence, the incorporation probabilities were 0.0015 and 0.0004 for the 100 and 15 eV bombardment, respectively. When the amount of incorporated argon was measured as a function of fluence, it increased with fluence at low fluences, reached a quasisaturation at about 1×1016/cm2, but became fluence dependent again above 1×1018/cm2. The retained argon was stable at room temperature but showed at least two stages of thermal desorption in the temperature range 25–500 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355024
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  • 5
    Electronic Resource
    Electronic Resource
    Hydrogen catalyzed crystallization of strontium titanate (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2711-2718 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallization rate of amorphous strontium titanate is enhanced by more than an order of magnitude during thermal annealing in water vapor as compared to a dry ambient. Time resolved optical reflectivity (TRR) has been combined with Rutherford backscattering spectrometry (RBS) and ion channelling to investigate this effect. Thin amorphous films (0.6 μm) were produced on single-crystal substrates of (100) strontium titanate by bombardment with 1.9 or 2.0 MeV Pb ions. Specimens were annealed under controlled ambient conditions (H2O, D2O, vacuum, 265–430 °C) and the solid phase epitaxial crystallization monitored in situ by TRR (633 nm). The TRR data were calibrated ex situ by transmission electron microscopy and RBS measurements. Isotope substitution, nuclear reaction analysis, and secondary-ion-mass spectrometry were utilized to reveal the uptake of hydrogen and oxygen into the implanted layer. Hydrogen is identified as the only species which penetrates to the crystal/amorphous interface. It is shown that the crystallization rate is proportional to the concentration of diffusing hydrogen (H or D) at the interface. The data show that the effect of water vapor, or more precisely, hydrogen, is to reduce the activation energy of crystallization from 2.1 to 1.0 eV. It is concluded that hydrogen, provided by the dissociation of water molecules at the surface, is a catalyst in the crystallization of amorphous strontium titanate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357574
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  • 6
    Electronic Resource
    Electronic Resource
    Positron annihilation study of defects in boron implanted silicon (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7685-7691 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defects and their annealing behavior in boron implanted silicon have been studied using positron annihilation spectroscopy (PAS), ion channeling, nuclear reaction analysis, and transmission electron microscopy. Silicon wafers were implanted with 80 keV boron ions to fluences from 1012 to 1015 cm−2. Furnace annealing or rapid thermal annealing (RTA) of the implanted Si samples was conducted to temperatures in the range 750–950 °C in a N2 ambient. For as-implanted samples, the defect profiles extracted from PAS spectra were found to extend beyond the implanted boron distribution given by TRIM calculations. The Sdefect/Sbulk values increased monotonically with increasing boron fluences. For boron fluences ≥1013 cm−2,Sdefect/Sbulk was found to be 〉1.04 (the characteristic value for divacancy), while Sdefect/Sbulk was found to be 〈1.04 for a boron fluence of 1012 cm−2. After annealing at 750 °C, all B-implanted samples had similar S-parameter values in the near-surface region, while in the deep region the S values for high B fluences (φ≥1014 cm−2) were found to be lower than those for low B fluences (φ≤1013 cm−2). Annealing at 950 °C did not change the S-parameter data for the lowest boron fluence (1012 cm−2), but caused a slight increase of the S parameters in the deep region for other boron fluences. RTA at 750 °C shows that major defects in B-implanted Si are annealed out within the first 3 s. An interesting transient annealing behavior is observed in which the S value decreases in the initial annealing stage, and then increases to a saturating value after prolonged annealing. Possible effects of electric fields resulting from the electrical activation of implanted boron on the behavior of positron annihilation line shapes after annealing are discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373441
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  • 7
    Electronic Resource
    Electronic Resource
    Trapping of Si interstitials in boron doping background: Boron clustering and the "+1" model (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 174-181 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron transient enhanced diffusion (TED) in Si predoped with boron isotope atoms has been studied using secondary ion mass spectroscopy and channeling nuclear reaction analysis. Si crystal was first implanted with 11B ions of various doses and subsequently annealed at 1100 °C for 2 h to produce a uniform 11B doping concentration. The 11B-doped sample and a Si control sample were then implanted with 40 keV 10B ions. Compared to the 11B-free sample, 10B TED in the 11B-doped sample is much retarded during the initial anneal at 750 °C for 1 h, while more broadening in the 10B profile occurs for the 11B-doped sample after a second anneal at 950 °C for 15 min. The effect of 11B doping on 10B TED is discussed in terms of the trapping of Si interstitials in 11B doping background. The amount of trapped Si interstitials, for a certain 10B dose, increases with 11B doping concentration, but no "missing" Si interstitials are found for a 11B doping level of 7.8×1017 cm−3. From our data we show that it is also possible to test the "+1" model from the knowledge of B clustering mechanisms. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369466
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  • 8
    Electronic Resource
    Electronic Resource
    Surface alloying in stainless steel and Ni-20% Fe by pulsed laser irradiation (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3061-3070 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface alloys have been produced by pulsed laser irradiation of thin metal overlayers (Au and Mo) on austenitic stainless steel and Ni-20% Fe. The structure and composition of the surface alloys have been characterized by Rutherford backscattering and ion channeling. The stainless-steel alloy has a thin surface layer with nonsubstitutional Au or Mo on top of the substitutional alloy. Metastable solid solutions of gold are formed with concentration levels as high as 5 at. % in stainless steel and 28 at. % in Ni-20% Fe. The laser alloying process involves surface melting and, in some cases, the formation of ∼1-μm-high ridges. The quality of the epitaxial regrowth, as seen in the channeling spectra, ranges from good to very poor. Dechanneling in the alloyed surface has a complex behavior and is dependent on the energy density used for the irradiation. It is also important whether or not the irradiation is carried out in air or in flowing helium. The use of flowing helium instead of air has a striking reverse effect on the two alloy systems; it reduces the lattice disorder of alloys formed by Au and stainless steel, while an increase in disorder is seen when Au is alloyed with Ni-20% Fe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337858
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  • 9
    Electronic Resource
    Electronic Resource
    Enhanced degradation resistance of quantum dot lasers to radiation damage (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 624-626 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We compare the degradation of InAs/GaAs quantum well (QW) and quantum dot (QD) laser diodes following irradiation by high energy (8.56 MeV) phosphorous ions. Over a fluence range of 108–1011 ions/cm2, the degradation of the low temperature QD photoluminescence and electroluminescence emission is greatly suppressed relative to that of QW based devices (×100 and ×1000, respectively at the highest dose studied). Irradiated QD laser diodes demonstrated lasing action over the entire range of fluences, and 2 orders of magnitude beyond the maximum dose sustainable by QW devices. The improved damage response of QD based structures results from efficient collection and localization of electrons and holes by QDs in the active region, which limit carrier transfer to nonradiative centers. This work suggests the suitability of QD device architectures for use in radiation environments, and in high power applications, wherever nonradiative processes promote the degradation or failure of traditional QW devices. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127065
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  • 10
    Electronic Resource
    Electronic Resource
    A comparison of spectroscopic and microscopic observations of ion-induced intermixing in InGaAs/InP quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1599-1601 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using n-doped InGaAs/InP multi-quantum-well samples we compare measurements of ion-beam-induced quantum well broadening made by cross-sectional scanning tunneling microscopy and cross-sectional scanning transmission electron microscopy with the broadening calculated from the blueshift of the low temperature photoluminescence peak using different models of the intermixing process. Results are consistent with a simple square well model used to interpret photoluminescence shifts, but disagree with a model of separate Fick's law diffusion on group III and V sublattices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121185
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