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Wafer and epilayer improvement for integrated optics devices on InP: the ESPRIT project 2518 (1991)

Renaud, M. ; Bris, J. ; Erman, M. ; [et al.]

Springer

Optical and quantum electronics 23 (1991), S. 391-404

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ISSN: 1572-817X

Source: Springer Online Journal Archives 1860-2000

Topics: Electrical Engineering, Measurement and Control Technology , Physics

Notes: Abstract Ga x In1−x As y P1−y alloys lattice matched to InP substrates are currently used to fabricate optoelectronic and integrated optics devices. To achieve devices with high performances and high fabrication yield, the uniformity and reproducibility of the Ga x In1−x As y P1−y epitaxial layers (composition, thickness, doping, etc.) have become key parameters. These problems have been addressed in the frame of ESPRIT project 2518 and are presented in this paper. Several aspects have been considered starting from the optimization of InP substrates, the MOVPE growth of uniform GalnAsP layers, the material characterization to the validation of material uniformity on passive optical waveguides. Both scanning photoluminescence analysis and waveguide losses measurements performed on 2 inch wafers with a high lateral resolution have shown that high quality uniform GalnAsP layers can be obtained reproducibly on 2″ InP substrates using a commercially available LP-MOCVD growth process. In particular, more than 60% of 36 mm long, 3μm wide and 100μm spaced rib waveguides exhibit losses below 0.8dBcm−1.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00619612

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Schichtstrukturen ternärer Chalkogenide A2M3X4 (A ≙ K, Rb, Cs; M ≙ Ni, Pd, Pt; X ≙ S, Se)Professor Hanskarl Müller-Buschbaum zum 60. Geburtstage gewidmet (1991)

Bronger, W. ; Rennau, R. ; Schmitz, D.

Weinheim : Wiley-Blackwell

Zeitschrift für anorganische Chemie 597 (1991), S. 27-32

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ISSN: 0044-2313

Keywords: Ternary chalcogenides A2M3X4 (A ≙ alkali metal; M ≙ Ni, Pt, Pd; X ≙ S, Se) crystal structures ; Chemistry ; Inorganic Chemistry

Source: Wiley InterScience Backfile Collection 1832-2000

Topics: Chemistry and Pharmacology

Description / Table of Contents: Layered Structures of Ternary Chalcogenides A2M3X4 (A ≙ K, Rb, Cs; M ≙ Ni, Pd, Pt; X ≙ S, Se)The ternary chalcogenides A2M3X4 have been prepared by fusion reactions of alkali carbonates with metals M ≙ Ni, Pd or Pt and the chalcogens X ≙ S or Se. Alternatively, the chalcogenides could be synthesized from alkali carbonates and M in a stream of hydrogen charged with chalcogen. X-ray investigations on powdered samples and single crystals reveal layered structures in which neutral A2M3X4-slabs from stacking variants.

Notes: Die Synthese ternärer Chalkogenide A2M3X4 gelang über Schmelzreaktionen durch Umsetzungen von Alkalimetallcarbonaten mit den Metallen M ≙ Ni, Pd oder Pt und den Chalkogenen X ≙ S oder Se oder über eine Reaktion der beiden erstgenannten Komponenten in einem mit Chalkogen beladenen Wasserstoffstrom.Röntgenographische Untersuchungen an pulverförmigen Proben sowie an Einkristallen führten zu Schichtstrukturen, in denen neutrale A2M3X4-Schichtpakete Stapelvarianten erzeugen.

Additional Material: 2 Ill.