ISSN:
1432-0630
Keywords:
61.70.−r
;
71.55.−i
;
81.40.−z
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The central position and the infrared absorption coefficient of the 9 μm band of Si samples were measured with Fourier transform infrared spectroscopy (FTIR) at temperatures from T=77 K to 775 K. The infrared absorption coefficients were corrected by considering background absorption and free carrier absorption calculated from the increased free carrier concentration and from the resistivity determined from Hall effect measurements. We found the central position of the 9 μm band to shift to longer wavelengths with increasing temperature. The concentration [Oi] of interstitial oxygen is almost constant for T〈600 K, but decreased rapidly for T〉600 K. These results verified there are two types of thermal configurations of oxygen in silicon: The bonded Si2O configuration with a binding energy E b≈0.8 to 1.0 eV at T≈77 K to 600 K, and the Si2O configuration coexists with a quasi-free interstitial oxygen (QFIO) state for T〉600 K. The lattice potential barrier E L, which retards QFIO atoms from migrating in the lattice, is estimated to be 1.5 to 1.6 eV. From these configurations the anomalous diffusivity of oxygen in silicon can be explained quite well.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00324078
Permalink
