ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Polycrystalline and amorphous Si-C films were prepared by rf glow-discharge decomposition of silane-methane mixtures at 700 °C. We have demonstrated that polycrystalline SiC films with large grains grow under heavy hydrogen dilution. The bonding properties as a function of film composition and hydrogen dilution were characterized by means of x-ray diffraction and x-ray photoelectron spectroscopy. Crystallization takes place at around C content x=0.5 in Si1−xCx, accompanying some segregation of carbon atoms in grain boundaries, as a result of a preference for heteronuclear bonds. It was shown that C-C(C3−nSin) (n=0–3) bonds appear in the carbidic phase of C-rich films, leading to occurrence of compressive strain in the crystalline SiC grains. In addition, effects of hydrogen dilution were discussed in correlation with the strain.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.350561
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