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  • 1990-1994  (6)
  • 1980-1984
  • 1993  (6)
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  • 1990-1994  (6)
  • 1980-1984
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  • 1
    Electronic Resource
    Electronic Resource
    Carbon incorporation during growth of GaAs by TEGa-AsH3 base low-pressure metalorganic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7851-7856 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heavily carbon-doped GaAs (1×1018∼1×1020 cm−3) grown by low-pressure metalorganic chemical vapor deposition using triethylgallium and arsine as sources and liquid carbon-tetrachloride (CCl4) as dopant has been investigated. The carrier concentration was verified at various growth temperatures, V/III ratios, and CCl4 flow rates. Dopant concentration first increased from 550 °C and reached a maximum at 570 °C growth temperature (Tg) and then decreased monotonously. Carbon incorporation was strongly enhanced when the V/III ratio was less than 30 at Tg=590 °C or less than 40 at Tg=630 °C. Hole concentration increased and then decreased as CCl4 flow rate increased. Growth rate of layers decreased as growth temperature and flow rate of CCl4 increased. The doping efficiency of epitaxial layers grown on the (100) substrate was higher than that on the 2° off toward 〈110(approximately-greater-than) misoriented substrate. Carbon-doped GaAs films had higher Hall mobility than zinc-doped GaAs films at high doping levels due to less self-compensation. The highest dopant concentration in this system was 2.3×1020 cm−3 at Tg=580 °C and V/III=10.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353935
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    In0.49Ga0.51P/GaAs heterostructures grown by low-pressure metalorganic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 672-678 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully grown In0.49Ga0.51P/GaAs heterostructures and made InGaP-based high electron mobility transistors (HEMTs) by low-pressure metalorganic chemical vapor deposition. We have found the epitaxial layer of InGaP with a Hall mobility of 4073 cm2/V s (300 K) and the photoluminescence full width at half-maximum of 1 meV (4.2 K) for GaAs, 12 meV (4.2 K) for In0.49Ga0.51P. Zinc-induced disordering phenomenon was examined by transmission electron microscope. By Shubnikov-de Haas measurement, we demonstrated the existence of a two-dimensional electron gas in InGaP/GaAs heterojunctions. The sheet carrier concentration of 2DEG is around 8.8×1011 cm−2 at 1.5 K. A HEMT device with 1 μm×40 μm gate (pattern) shows an extrinsic transconductance of 65.5 mS/mm and an intrinsic transconductance of 266 mS/mm at 300 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355229
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Transverse mode emission characteristics of gain-guided surface emitting lasers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2624-2626 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transverse mode emission characteristics of gain-guided surface emitting lasers at 0.85 μm were investigated. Up to six nondegenerate circularly symmetrical modes were observed with detunings between the adjacent modes around 2.5 A(ring). Numerical simulations were performed. The calculated beam sizes, difference of modal gains to account for the side mode suppression ratio when operated with one dominant mode, and wavelength detunings agreed with experiments. Numerical simulations also predict that the mirror loss due to Gaussian beam diffraction is nonnegligible for the 1.3–1.55 μm devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110426
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    The small amplitude magnetohydrodynamic Riemann problem (1993)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 5 (1993), S. 2877-2886 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The small amplitude magnetohydrodynamic Riemann problem is studied using the Cohen–Kulsrud–Burgers equations. Unlike the coplanar Riemann problem, the evolution of noncoplanar Riemann problems is not self-similar and its flow structures could change in time. But its large-time behavior is very simple and a time-dependent 2→3 intermediate shock is always involved for the noncoplanar field rotations. The time-dependent 2→3 intermediate shock has a well-defined structure and exists for any degree of field rotation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.860675
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Attenuation of endothelium-dependent relaxation in mesenteric artery during noise-induced hypertension (1993)
    Springer
    Journal of biomedical science 1 (1993), S. 49-53 
    Details
    ISSN: 1423-0127
    Keywords: Noise ; Endothelium ; A23187 ; Acetylcholine ; Nitroglycerin
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract The present study was designed to determine whether there is a causal relationship between noise-induced hypertension and changes of endothelial function. Rats were exposed to noise stress (100 dB, 1 kHz, 4 h/day, 6 days/week) for 1–4 weeks. The systolic blood pressure was significantly increased after rats were exposed to noise stress for 3 weeks. The relaxant responses of isolated mesenteric arterial rings to endothelium-dependent vasodilators (A23187 and acetylcholine) in noise-treated rats were significantly less than those in control rats. This difference in response to acetylcholine still existed in the presence of methylene blue or Nω-nitro-L-arginine. On the other hand, the responses to the endothelium-independent vasodilator nitroglycerin were not affected in rats exposed to noise stress. The attenuation to endothelium-dependent vasodilators during noise stress may result in increasing peripheral vascular resistance and thus elevate blood pressure. This indicates that noise-induced hypertension may be partly due to the alterations of endothelial activity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02258339
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  • 6
    Electronic Resource
    Electronic Resource
    Semi-insulating iron-doped indium phosphide grown by low-pressure metal-organic chemical vapour deposition (1993)
    Springer
    Journal of materials science 4 (1993), S. 62-66 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract (C5H5)2Fe and Fe(CO)5 were used as the 3d transition-metal dopant sources in the growth of semi-insulating InP epitaxial layers by low-pressure metal-organic chemical vapour deposition (MOCVD). From the bright- and dark-field images of transmission electron microscopy (TEM) analysis, many precipitates were observed. Three extra peaks in the X-ray diffraction pattern were found. The peaks of band-band recombination, donor-acceptor pair recombination transitions and the recombination of donor-acceptor pair with one-phonon emission were observed in the short-wavelength range of low-temperature photoluminescence measurement. Three Fe-related peaks were observed at 0.7079, 0.6897 and 0.6683 Ev. For a wide range (10–600) of In/Fe molar fraction, the resistivity remained at high values (about 108 Ω cm) and the highest resistivity appeared at 5 × 108 Ω cm for a 1 Μm layer with a breakdown voltage of 9 V.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00226636
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    Paper (German National Licenses)
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