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  • 1990-1994  (15)
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1551-1553 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep electron traps in Te-doped AlSb have been investigated by deep level transient spectroscopy (DLTS). The diodes used for DLTS measurement were InAs/AlSb n-N isotype heterojunctions (quasi-Schottky barriers) with excellent rectification characteristics, grown on n+-GaAs substrates by molecular beam epitaxy. In the temperature range investigated, from 90 to 300 K, a number of electron trap levels were observed, not all of them well defined. The best-defined level was found to have a thermal electron emission energy of 0.26 eV, much shallower than the values 0.46–0.48 eV found by Takeda et al. for AlxGa1−xSb alloys with x≤05. This suggests a compositional dependence of the thermal emission energy for the deep electron trap level in AlxGa1−xSb in the range 0.4〈x≤1.0, in contrast to the constant value reported for AlxGa1−xAs. Temperature-dependent Hall effect measurements gave an ionization energy of 100 meV, suggesting that EDX decreases with increasing Al content, as in (Al,Ga)As. In a sample doped with Te at a level of 3.1×1017 cm−3, the trap concentration was 2.0×1017 cm−3, indicating that Te-doped AlSb has a much larger number of deep electron traps than n-AlAs.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3303-3305 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on photoluminescence spectra from narrow InAs-AlSb quantum wells. Strong, clearly resolved peaks for well widths from 2 to 8 monolayers were observed. Transmission electron micrographs show direct evidence for the structural quality of the quantum well structures. The transition energies of the narrowest wells suggest a strong influence of the AlSb X-barrier on the electronic states in the conduction band.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1854-1856 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron concentration in not-intentionally doped InAs/AlSb quantum wells is found to depend sensitively on the top AlSb barrier thickness even for barriers as thick as 100 nm. The carrier concentration increases as the thickness of this barrier is decreased. The analysis of the dependence of concentration on top barrier thickness indicates that the Fermi level is pinned at the surface of the sample, 850±50 meV below the conduction band edge of the AlSb top layer. Surface donors are the main contribution to the high carrier concentrations in these not-intentionally doped wells.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3392-3394 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs-AlSb short period superlattices were grown with both InSb-like or AlAs-like interfaces and their properties were studied using photoluminescence, x-ray diffraction, and transmission electron microscopy. A shift of 96 meV in the photoluminescence peak position is observed, with the peak from the sample with InSb-like interfaces being at a lower energy. The shift is interpreted as an interface band structure effect. X-ray diffraction patterns indicate that the sample with InSb-like interfaces grows pseudomorphically to the AlSb buffer layer, while the sample with AlAs-like interfaces is heavily dislocated. Transmission electron micrographs confirm the x-ray data.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1211-1213 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth of GaSb/AlSb serpentine superlattices (SSLs) on vicinal GaAs and GaSb substrates. Cross-sectional transmission electron microscopy confirms the SSL structure and shows excellent lateral uniformity, better than previous arsenide-SSLs. Photoluminescence (PL) measurements indicate a good-quality lateral superlattice with a spectral linewidth between 13 and 15 meV. Polarization-dependent PL measurements give a normalized linear polarization around 60%, the strongest that has been seen for SSL structures. Preliminary estimates suggest much better segregation between the Ga-rich and Al-rich regions than arsenide-SSLs, with the change in aluminum concentration Δx≈0.35.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    New York : Cambridge University Press
    Church history 61 (1992), S. 415-416 
    ISSN: 0009-6407
    Source: Cambridge Journals Digital Archives
    Topics: History , Theology and Religious Studies
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    New York : Cambridge University Press
    Church history 60 (1991), S. 55-69 
    ISSN: 0009-6407
    Source: Cambridge Journals Digital Archives
    Topics: History , Theology and Religious Studies
    Notes: Several scholars, including Workman, Cragg, Dreyer, and now Henry Rack, have called attention to Wesley's endorsement of Locke's philosophy (within limits) and, more broadly, to the debt which he owed to empiricist psychology and theories of knowledge. Wesley read the Essay Concerning Human Understanding in 1725 during the interval between his commencement as a Bachelor of Arts and his election to a Fellowship at Lincoln College, Oxford. The book made a favorable impression which endured to the end of his life. During the decade of the eighties, for instance, Wesley published a series of extracts from the Essay, books I and II, in his Arminian Magazine (volumes 5–7, 1782–1784). He also praised The Procedure, Extent, and Limits of Human Understanding and Things Divine and Supernatural Conceived by Analogy with Things Natural and Divine, books written by Peter Browne (died 1735), an Irish bishop and philosopher whom Locke had influenced to a considerable degree. Indeed, at one juncture, Wesley expressed a preference for Browne over Locke. He wrote in his journal for 6 December 1756, “I began reading to our preachers the late Bishop of Cork's Treatise on Human Understanding, in most points far clearer and more judicious than Mr. Locke's, as well as designed to advance a better cause.”
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3032-3037 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on the role of the InAs/AlSb interface in determining the electron transport in AlSb/InAs/AlSb quantum wells grown by molecular-beam epitaxy. Because both anion and cation change across an InAs/AlSb interface, it is possible to grow such wells with two different types of interfaces, one with an InSb-like bond configuration, the other AlAs-like. Electron mobility and concentration were found to depend very strongly on the manner in which the quantum well's interfaces were grown, indicating that high mobilities are seen only if the bottom interface is InSb-like. An As-on-Al sites antisite defect model is postulated for bottom AlAs-like interfaces. Such antisites were used in subsequent samples as donors in modulation-doped high-mobility InAs/AlSb quantum wells.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Contact dermatitis 30 (1994), S. 0 
    ISSN: 1600-0536
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Contact dermatitis 30 (1994), S. 0 
    ISSN: 1600-0536
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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