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  • 1
    Electronic Resource
    Electronic Resource
    p on n heterostructures in HgCdTe on GaAs analyzed by transmission electron microscopy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7952-7954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of p on n HgCdTe heterostructures grown by molecular beam epitaxy on GaAs(211) B substrates have been analyzed by transmission electron microscopy. The HgCdTe absorber layer is grown on a CdTe buffer and doped n type with indium. The p-type arsenic dopant is incorporated in the heterostructure during growth into a HgTe/CdTe cap superlattice and annealed ex situ to form the random alloy. The active p-n junction is formed below the as-grown p-n interface as a result of As diffusion. We compare the device performance with the microstructural defects in the various regions of the device layers and show the importance of dislocations near the p-n junction as well as in the n layer in influencing device quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354093
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Microstructural evolution during the heteroepitaxy of Ge on vicinal Si(100) (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6461-6471 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microstructural evolution during the initial stages of islanding of Ge on vicinal Si(100) has been studied in situ with nanometer resolution in an ultrahigh-vacuum scanning transmission electron microscope. Ge is deposited using molecular-beam-epitaxy (MBE) techniques on vicinal Si(100) misoriented 1° and 5° toward 〈110〉. For MBE-type experiments, there is evidence for metastable growth of the Ge intermediate layer to much greater than the equilibrium critical thickness. The layer may grow up to seven monolayers thick before islanding in the Stranski–Krastanov growth mode. The presence of strong adatom sinks significantly alters the growth and size distribution of the islands when the spacing of these sinks is less than an adatom diffusion distance. Studies of the initial stages of islanding in solid-phase MBE indicate that there is no long-range adatom diffusion. There is an initial fast transformation from a disordered layer growth, followed by a sluggish growth of islands. We have studied the coarsening of these islands at the earliest stages with sensitivity to islands as small as 2 nm in radius. It appears that there is a novel coarsening mechanism influenced by an unstable intermediate layer and dislocation-free islands. In all cases, the dislocation-free islands grow more slowly than those which have relaxed by the introduction of misfit dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348852
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Step equalization in epitaxial growth: A noise limited process (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1350-1352 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results from the Monte Carlo simulation of terrace size evolution by vapor phase growth on vicinal surfaces. We show that as a function of the number of added monolayers, the standard deviation of the step length distribution rapidly falls to a constant equilibrium value. We argue that recent analytical and numerical work indicating that the standard deviation falls continuously is incorrect because of a statistical preaveraging of the evolution equations. This has experimental importance as it shows that increasing the number of monolayers beyond a certain limit has no effect on the step size distribution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108675
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  • 4
    Electronic Resource
    Electronic Resource
    Structure of serpentine superlattice quantum-wire arrays determined by transmission electron microscopy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2990-2992 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of serpentine superlattice (SSL) quantum-wire arrays is analyzed with transmission electron diffraction and microscopy. The lateral SSL barriers are nominally formed as a digital alloy of (AlAs)r(GaAs)p partial layers in the vertical direction. Micrographs demonstrate the predicted SSL shape and its insensitivity to systematic deposition rate errors. A diffraction pattern is synthesized to explain diffraction features and order-sensitive SSL images, which are compared with chemical contrast images. The lateral structure is observed to be incompletely segregated into wells and barriers. The length of the quantum wires is estimated to be at least on the order of 100 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108012
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Growth and characterization of serpentine superlattices in the GaSb-AlSb system (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1211-1213 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth of GaSb/AlSb serpentine superlattices (SSLs) on vicinal GaAs and GaSb substrates. Cross-sectional transmission electron microscopy confirms the SSL structure and shows excellent lateral uniformity, better than previous arsenide-SSLs. Photoluminescence (PL) measurements indicate a good-quality lateral superlattice with a spectral linewidth between 13 and 15 meV. Polarization-dependent PL measurements give a normalized linear polarization around 60%, the strongest that has been seen for SSL structures. Preliminary estimates suggest much better segregation between the Ga-rich and Al-rich regions than arsenide-SSLs, with the change in aluminum concentration Δx≈0.35.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109774
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    Paper (German National Licenses)
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