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p on n heterostructures in HgCdTe on GaAs analyzed by transmission electron microscopy (1993)

Krishnamurthy, Mohan ; Petroff, P. M. ; Arias, J. M.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 73 (1993), S. 7952-7954

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The structure of p on n HgCdTe heterostructures grown by molecular beam epitaxy on GaAs(211) B substrates have been analyzed by transmission electron microscopy. The HgCdTe absorber layer is grown on a CdTe buffer and doped n type with indium. The p-type arsenic dopant is incorporated in the heterostructure during growth into a HgTe/CdTe cap superlattice and annealed ex situ to form the random alloy. The active p-n junction is formed below the as-grown p-n interface as a result of As diffusion. We compare the device performance with the microstructural defects in the various regions of the device layers and show the importance of dislocations near the p-n junction as well as in the n layer in influencing device quality.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.354093

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