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  • 1990-1994  (3)
  • 1993  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Boron delta-doped Si metal semiconductor field-effect transistor grown by molecular-beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1363-1365 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A working p-type Si metal semiconductor field-effect transistor structure, utilizing a boron delta-doped layer as the conducting channel, has been successfully fabricated. Based on Hall measurements, a hole mobility of 120 (180) cm2 V−1 s−1 at 300 (77) K has been obtained. The sheet carrier density of the delta layer was estimated to be about 1.8×1012 cm−2. It is shown that the delta field-effect transistor exhibits an extrinsic transconductance of 640 μS/mm for a gate length of 5 μm, and a high gate to drain breakdown voltage ((approximately-greater-than)18 V). By reducing the gate length to 1 μm, a transconductance of up to 3.2 mS/mm is expected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110769
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    10 GHz bandwidth monolithic p-i-n modulation-doped field effect transistor photoreceiver (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2115-2116 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A photoreceiver circuit using an InGaAs p-i-n photodiode and InGaAs/InAlAs pseudomorphic modulation-doped field effect transistor (MODFET) based preamplifier has been fabricated. The 18 μm diam photodiode has a bandwidth of 29 GHz and the ft and fmax of the MODFET are 26 and 30 GHz, respectively. The photoreceiver circuits have bandwidths of 10 GHz and 17 dB gain. The sensitivity at 2.5 Gb/s is −26.4 dBm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110557
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    99mTc-sestamibi can improve the inferior attenuation of TL-201 myocardial spect imaging (1993)
    Springer
    The international journal of cardiovascular imaging 9 (1993), S. 87-92 
    Details
    ISSN: 1573-0743
    Keywords: 99mTc-sestamibi myocardial imaging ; radionuclide myocardial perfusion imaging
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Tl-201 myocardial scintigraphy (Tl study) tends to be attenuated by soft tissues (such as the diaphragm) due to its low energy emission. 99mTc-sestamibi (2-methoxy isobutyl isonitrile) is a relatively new agent with a higher energy emission and this characteristic accounts for the higher quality of 99mTc-sestamibi images. The purpose of this study is to evaluate the ability of 99mTc-sestamibi in alleviating the inferior attenuation of Tl studies. 99mTc-sestamibi SPECT myocardial scintigraphy was performed on 13 patients with inferior wall perfusion defects as determined by Tl study (but with normal coronary artery as evidenced by cardiac catheterization). All patients underwent Tl SPECT study using a standard procedure. Same-day protocol (rest-stress sequence) was used for 99mTc-sestamibi SPECT imaging. All images were analyzed by two independent observers. The results of our study reveal that 99mTc-sestamibi produced better images. The inferior wall perfusion defects in the Tl study were noted in one case only (l/13)in the 99mTc-sestamibi study. Our study suggests that 99mTc-sestamibi can remarkably reduce the inferior attenuation of Tl study.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01151432
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    Paper (German National Licenses)
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