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Effect of oxygen aggregation processes on the recombining activity of 60° dislocations in Czochralski grown silicon (1994)

Acerboni, S. ; Pizzini, S. ; Binetti, S. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 76 (1994), S. 2703-2710

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Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The interaction of dislocations with light elements like oxygen and carbon presents a variety of aspects which are of basic interest for the understanding of gettering processes, as well as for a deeper knowledge of the electrical and optical properties of dislocations. We report the results of a systematic investigation of the influence of the dislocations on the segregation of oxygen and of the effect of oxygen segregation on their electrical activities. The experiments were carried out on p-type Czochralski silicon, in the 700–1100 °C temperature range. It has been shown that not only a direct oxygen-dislocation interaction occurs, but also that a competition between homogeneous and heterogeneous segregation processes occurs, which influences the overall electrical properties of the samples as well.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.357573

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