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  • 1
    Electronic Resource
    Electronic Resource
    The relationship between the microstructure and magnetic properties of sputtered Co/Pt multilayer films (abstract) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6099-6099 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co/Pd multilayer films (MLFs) are of interest because of their potential application as high-density magneto-optical recording media. Co/Pd MLFs with varying Co and Pd layer thicknesses were grown by sputter-deposition onto (100) Si wafers. X-ray diffraction and high resolution electron microscopy were used to study the microstructure of the films, and Lorentz microscopy was used to analyze their magnetic domain structure. The films show an fcc crystal structure with a compromised lattice parameter and a strong (111) crystallographic texture in the growth direction. The compromised interplanar spacing parallel to the surface increased with decreasing thickness ratio (tCo/tPd), and the columnar grain size decreased with increasing Pd layer thickness. Films with tCo=0.35 nm and tPd=2.8 nm (columnar grain diameter 20 nm) showed promising magnetic properties, namely a high perpendicular magnetic anisotropy (1.85×105 J m−3), with a perpendicular coercivity of 98.7 kA m−1, a perpendicular remanence ratio of 99%, and a perpendicular coercivity ratio of 88%. The magnetic domains were uniform and of a narrow stripe type, confirming the perpendicular easy axis of magnetization. The Curie temperature was found to be about 430 °C. Films of pure Co and Pd, grown for comparison, also showed columnar grain structure with grain-sizes of the same order as those seen in the MLFs. In addition the Pd films showed a (111) textured fcc structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358384
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  • 2
    Electronic Resource
    Electronic Resource
    Nanocrystalline Nd12Fe80B6Nb1Ga1 melt-spun ribbon with textured surface (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4756-4758 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In Nd-Fe-B melt-spun ribbon, Ga addition is found to be effective for the orientation of c axis of 2-14-1 grains normal to the ribbon plane even at high wheel surface velocity. A Nd12Fe80B6Nb1Ga1 melt-spun ribbon quenched with optimum wheel surface velocity was found to have textured structure on the free-side surface. Furthermore, this melt-spun ribbon was composed of fine grains of about 30 nm in size which is believed to be enough to provoke intergrain exchange interaction. The remanence and energy product of the field aligned powder of this melt-spun ribbon was about 7% and 20% higher than those of the not-aligned powder, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355904
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  • 3
    Electronic Resource
    Electronic Resource
    Epitaxial (GaAs)1−x(Si2)x metastable alloys on GaAs(001) and (GaAs)1−x(Si2)x /GaAs strained-layer superlattices: Crystal growth, spinodal decomposition, and antiphase domains (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1644-1655 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of single-crystal zincblende-structure (GaAs)1−x(Si2)x metastable semiconducting alloys with 0≤x≤0.40 has been investigated using triple-crystal x-ray diffraction (XRD), plan-view and cross-sectional transmission electron microscopy (TEM and XTEM), scanning transmission electron microscopy, and convergent-beam electron diffraction. The alloys, typically 1–3 μm thick, were grown using a hybrid sputter-deposition/evaporation technique on As-stabilized GaAs(001) and (GaAs)1−x(Si2)x/GaAs(001) strained-layer superlattices, (SLS). Alloy XRD peak widths were approximately equal to those of the GaAs substrates, 30 arcsec, and lattice constants, uncorrected for strain, obeyed Vegard's "law'' and decreased linearly with increasing x. TEM and XTEM examinations of (GaAs)1−x(Si2)x alloys with 0≤x≤0.20 grown on GaAs revealed no evidence of dislocations or other extended defects. Film/substrate lattice misfit strain in alloys with 0.11〈x〈0.20 was partially accommodated by the formation of a thin interfacial spinodal layer whose average thickness increased with x to (approximately-equal-to)70 nm. The spinodal region, which remained epitaxial, consisted of lenticular platelets extending along the [001] direction with a compositional modulation in orthogonal directions. Films with x≥0.20 exhibited, together with the interfacial zones, inhomogeneously distributed a0/2〈110〉-type threading dislocations. Antiphase domains were observed in alloys with x≥0.23. The use of (GaAs)1−x(Si2)x/GaAs SLS buffer layers extended the composition range to x=0.3 over which dislocation-free alloys, with no evidence of interfacial spinodal decomposition, could be obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357749
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetotransport and electron subband studies of edge delta-doped Al0.27Ga0.73As/GaAs single quantum wells (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2863-2867 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shubnikov–de Haas and Van der Pauw Hall effect measurements at 1.5 K have been carried out to investigate the existence of a two-dimensional electron gas and to determine subband energies in a Si-delta-doped Al0.27Ga0.73As/GaAs single quantum well. The fast Fourier transformation results for the S-dH data indicate clearly the occupation of two subbands in edge delta-doped Al0.27Ga0.73As/GaAs quantum wells. Capacitance-voltage profiling and temperature-dependent photoluminescence measurements have been performed to characterize the properties of edge delta-doped Al0.27Ga0.73As/GaAs quantum wells. Using these experimental results and a self-consistent numerical method which took into account the exchange-correlation effects, the electron subband energies were determined. These results indicate that edge delta-doped Al0.27Ga0.73As/GaAs single quantum wells are similar to the asymmetrical potential wells occupied by relatively high electron carrier densities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357523
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  • 5
    Electronic Resource
    Electronic Resource
    Metallic glass formation in highly undercooled Zr41.2Ti13.8Cu12.5Ni10.0Be22.5 during containerless electrostatic levitation processing (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2136-2138 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Various sample sizes of Zr41.2Ti13.8Cu12.5Ni10.0Be22.5 with masses up to 80 mg were undercooled below Tg (the glass transition temperature) while electrostatically levitated. The final solidification product of the sample was determined by x-ray diffraction to have an amorphous phase. Differential scanning calorimetry was used to confirm the absence of crystallinity in the processes sample. The amorphous phase could be formed only after heating the samples above the melting temperature for extended periods of time in order to break down and dissolve oxides or other contaminants which would otherwise initiate heterogeneous nucleation of crystals. Noncontact pyrometry was used to monitor the sample temperature throughout processing. The critical cooling rate required to avoid crystallization during solidification of the Zr41.2Ti13.8Cu12.5Ni10.0Be22.5 alloy fell between 0.9 and 1.2 K/s. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112768
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  • 6
    Electronic Resource
    Electronic Resource
    Surface segregation and growth-mode transitions during the initial stages of Si growth on Ge(001)2×1 by cyclic gas-source molecular beam epitaxy from Si2H6 (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 240-247 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface morphological and compositional evolution during the initial stages of Si growth on Ge(001)2×1 by cyclic gas-source molecular beam epitaxy from Si2H6 has been investigated using in situ reflection high-energy electron diffraction (RHEED), Auger electron spectroscopy, electron-energy-loss spectroscopy, and scanning tunneling microscopy, combined with post-deposition high-resolution cross-sectional transmission electron microscopy. The layers were deposited using repetitive cycles consisting of saturation Si2H6 dosing at room temperature, followed by annealing for 1 min at 550 °C. Film growth was observed to proceed via a mixed Stranski–Krastanov mode. Single-step-height two-dimensional growth was obtained for nominal Si deposition thicknesses tSi up to (approximately-equal-to)1.5 monolayers (ML). However, the upper layer remained essentially pure Ge which segregated to the surface through site exchange with deposited Si as H was desorbed. At higher tSi, the Ge coverage decreased slowly, the surface roughened, and two-dimensional multilayer island growth was observed for tSi up to (approximately-equal-to)7.5 ML, where bulk reflections in RHEED patterns provided evidence for the evolution of three-dimensional island formula.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355890
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  • 7
    Electronic Resource
    Electronic Resource
    Intramolecular energy flow and bond dissociation in iodoacetylene and iododiacetylene (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 4668-4681 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Intermolecular and intramolecular energy flow and subsequent bond dissociation in collinear collisions I–C≡C–H+Ar and I–C≡C–C≡C–H+Ar have been studied by classical trajectory techniques over the collision energy range of 0 to 10 eV. When the molecule is initially in the ground state, the overall energy transfer in I–C≡C–H+Ar is very small, but in I–C≡C–C≡C–H+Ar it is large. The collisionally perturbed C–H bond stores a large amount of energy from translation for a brief period during the early stage of collision and transfers most of it to the inner region of the molecule, specifically to the low frequency C–I vibration. Thus the high-frequency vibration of the perturbed C–H bond during the collision plays a crucial role in determining the extent of intramolecular energy transfer and, in turn, C–I dissociation. But in nondissociative collisions, there is another series of the C–H vibration at the latter stage of collision, transferring energy back to translation. This study also considers collision-induced intramolecular energy flow in the molecule with an initially excited C–H bond. The relaxation of the low-lying C–H excitation is very slow on a nanosecond time scale. However, when the excitation is high, the vibrational frequency of the C–H bond is significantly weakened, thus becoming comparable to that of the triple bond, in which case the isolating effect of the adjacent C≡C bond is no longer important and intramolecular energy flow becomes efficient.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.467456
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  • 8
    Electronic Resource
    Electronic Resource
    An investigation of photocurrent generation by squaraine aggregates in monolayer-modified tin oxide (SnO2) electrodes (1994)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 98 (1994), S. 984-988 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100054a039
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  • 9
    Electronic Resource
    Electronic Resource
    NMR Study of the Solution-State Dynamics and Solid-State Structure of Tri-n-butyltin Fluoride (1994)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 98 (1994), S. 4919-4922 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100069a025
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  • 10
    Electronic Resource
    Electronic Resource
    Magnetic properties of reactively sputtered Fe1−xO and Fe3O4 thin films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 431-437 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the magnetic properties of Fe3O4 thin films with thicknesses below 1000 A(ring). Previous reports had indicated an anomalous decrease in the saturation magnetization of Fe3O4 films with thicknesses below 700 A(ring). The films were prepared by reactive rf magnetron sputtering and effects of film thickness, oxygen flow rate, and substrate temperature were examined. A region of acceptable magnetic properties, which do not vary with film thickness, for Fe3O4 films has been found at both RT and 400 °C. Within the processing region for single-phase Fe3O4, the magnetic properties did not vary significantly with oxygen partial pressure but did change with substrate temperature. The RT films are characterized by low saturation magnetization, 250 emu/cm3, and modest coercivity, 250 Oe. The films at 400 °C have a higher saturation magnetization, 330 emu/cm3, but also a higher coercivity, 450 Oe. The increased saturation magnetization at higher temperature results from the higher film density and lower degree of cation disorder; the higher coercivity at 400 °C is anomalous. In addition, at RT we have discovered a processing region where ferrimagnetic wüstite, Fe1−xO, is formed. The Fe1−xO films have good soft magnetic properties and warrant further study.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355869
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