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  • 1
    Electronic Resource
    Electronic Resource
    Population genetic studies on pseudocholinesterase polymorphism in Germany, Čzechoslovakia, Finland and among Laps (1969)
    Springer
    Human genetics 〈Berlin〉 8 (1969), S. 158-161 
    Details
    ISSN: 1432-1203
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary The frequency of pseudocholinesterase variants controlled by the E1- and E2-locus have been determined in serum samples from Germany, Čzechoslovakia, Finland and from Laps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00295839
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  • 2
    Electronic Resource
    Electronic Resource
    Synergistic effect of tannic acid and X-rays detected by the Tradescantia-micronucleus bioassay
    Amsterdam : Elsevier
    Mutation Research/Environmental Mutagenesis and Related Subjects 271 (1992), S. 147 
    Details
    ISSN: 0165-1161
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0165-1161(92)91161-J
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  • 3
    Electronic Resource
    Electronic Resource
    Structural, electrical, and optical properties of SnO2 nanocrystalline thin films grown on p-InSb (111) substrates (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 175-180 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SnO2 thin films were grown on p-InSb (111) substrates by radio-frequency magnetron sputtering at low temperature. Atomic force microscopy images showed that the root mean square of the average surface roughness of the SnO2 films grown on the InSb (111) substrates with an Ar/O2 flow rate of 0.667 and at a temperature of 200 °C had a minimum value of 2.71 nm, and x-ray diffraction and transmission electron microscopy (TEM) measurements showed that these SnO2 thin films were polycrystalline. Auger electron spectroscopy and bright-field TEM measurements showed that the SnO2/p-InSb(111) heterointerface was relatively abrupt. High-resolution TEM measurements revealed that the SnO2 films were nanocrystalline and that the grain sizes of the nanocystalline films were below 6.8 nm. The capacitance–voltage measurements at room temperature showed that the type and the carrier concentration of the nominally undoped SnO2 film were n type and approximately 1.67×1016 cm−3, respectively, and the current–voltage curve indicated that the Au/n-SnO2/p-InSb diode showed tunneling breakdown. Photoluminescence spectra showed that peaks corresponding to the donor acceptor pair transitions were dominant and that the peak positions did not change significantly as a function of the measured temperature. These results indicate that the SnO2 nanocrystalline thin films grown on p-InSb (111) substrates at low temperature hold promise for new kinds of potential optoelectronic devices based on InSb substrates, such as superior gas sensors and high-efficiency solar cells. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1372159
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  • 4
    Electronic Resource
    Electronic Resource
    Existence of a CuAu–I-type ordered structure in lattice-mismatched InxGa1−xAs/InyAl1−yAs multiple quantum wells (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2503-2505 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selected area electron diffraction pattern (SADP) and transmission electron microscopy (TEM) measurements were carried out to investigate the ordered structures in lattice-mismatched InxGa1−xAs/InyAl1−yAs multiple quantum wells (MQWs). The SADP showed two sets of extra spots with asymmetrical intensity, and the high-resolution TEM image showed doublet periodicity in the contrast of the (001) lattice planes. The results of the SADP and the TEM measurements showed that a CuAu–I-type ordered structure was observed near the lattice-mismatched InxGa1−xAs/InyAl1−yAs heterointerfaces. This CuAu–I-type ordered structure had an antiphase boundary in the periodically regular InxGa1−xAs/InyAl1−yAs lattice-mismatched region. The existence of a CuAu–I-type ordered structure in InxGa1−xAs/InyAl1−yAs MQWs might originate from the lattice mismatch between the InxGa1−xAs and the InyAl1−yAs layers. These results provide important information on the microstructural properties for improving operating efficiencies in long-wavelength optoelectronic devices, such as strain compensated electroabsorption modulators utilizing lattice-mismatched InxGa1−xAs/InyAl1−yAs MQWs. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337917
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  • 5
    Electronic Resource
    Electronic Resource
    The formation of stable Co/Co2MnSn two phase magnets : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5253-5255 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase equilibria in the system Co–Mn–Sn have been studied with compositions along the join Co–CoMnSn. This is part of an effort to form a macroscopic ferrimagnet with two metallic ferromagnetic phases, Co and Co2MnSn. As-cast arc melted alloys have been made with Co compositions from 33 to 78 at. %. Three different phase and magnetization regions are observed with increasing Co composition. Cobalt becomes the primary phase at more than 71 at. % Co and crystallizes out of a Co2MnSn rich matrix. It is shown from x-ray diffraction analysis and the Tc change with Co compositions that the Co phase in Co2MnSn matrix is probably a Co–Mn solid solution. From the break in the magnetization vs temperature curves of two phase magnets with two different compositions, Curie temperatures are determined as approximately 160 °C and 175 °C for the Co–Mn solid solution phase. The exchange coupling at phase boundary is proposed by the analysis of coercivity vs temperature data. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361302
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  • 6
    Electronic Resource
    Electronic Resource
    Enhancement of the interband Stark effects in strained CdxZn1−xTe/ZnTe coupled double quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1550-1552 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of an electric field on the interband transitions in CdxZn1−xTe/ZnTe coupled double quantum wells have been investigated both experimentally and theoretically. Photoluminescence (PL) measurements have been performed to investigate the excitonic transitions in CdxZn1−xTe/ZnTe coupled double quantum wells. Transmission electron microscopy images show that a 35-Å Cd0.18Zn0.82Te quantum well and a 50-Å Cd0.18Zn0.82Te quantum well are separated by a 35-Å Cd0.1Zn0.9Te potential barrier. PL spectra at 300 K show the excitonic transitions. When an electric field is applied to a coupled double quantum well, the Stark shift of the interband transition energy in the CdxZn1−xTe/ZnTe coupled double quantum wells is much more sensitive to the applied electric field than that of the Cd0.1Zn0.9Te/ZnTe single quantum wells. The electronic subband energies and energy wave functions in the quantum wells are calculated by an envelope function approximation, which takes into account the strain effects. These results indicate that CdxZn1−xTe/ZnTe coupled double quantum wells hold promise for potential applications in optoelectronic devices, such as new types of modulators and tunable lasers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122202
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  • 7
    Electronic Resource
    Electronic Resource
    Strain effects in lattice-mismatched InxGa1−xAs/InyAl1−yAs coupled double quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 61-63 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy (TEM) and Raman scattering spectroscopy measurements were performed to investigate strain effects in lattice-mismatched InxGa1−xAs/InyAl1−yAs modulation-doped coupled double quantum wells. The high-resolution TEM images showed that a 100-Å In0.8Ga0.2As deep quantum well and a 100-Å In0.53Ga0.47As shallow quantum well were separated by a 30-Å In0.25Ga0.75As embedded potential barrier. The selected-area electron-diffraction pattern obtained from TEM measurements on the InxGa1−xAs/InyAl1−yAs double quantum well showed that the InxGa1−xAs active layers were grown pseudomorphologically on the InP buffer layer. The values of the strain and the stress of the InxGa1−xAs layers were determined from the electron-diffraction pattern. Based on the TEM results, a possible crystal structure for the InxGa1−xAs/InyAl1−yAs coupled double quantum well is presented. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121723
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  • 8
    Electronic Resource
    Electronic Resource
    Interband transition studies on CdxZn1−xTe/ZnTe step quantum wells under applied electric fields (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 563-565 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) measurements were carried out to investigate the interband transitions in CdxZn1−xTe/ZnTe asymmetric step quantum wells with and without an applied electric field. Transmission electron microscopy showed that the CdxZn1−xTe/ZnTe step quantum wells consisted of a shallow Cd0.1Zn0.9Te well and a deep Cd0.18Zn0.82Te well bound by two thick ZnTe barriers. The results for the PL data at 300 K for several applied electric fields showed that the excitonic transition from the first electronic state to the first heavy-hole state shifted to the larger energy side as the applied electric field increased. The electronic subband energies and the wave functions in the step quantum wells were calculated by an envelope-function approximation method, taking into account the strain effects, and the calculated values of the interband transitions were in qualitative agreement with those obtained from the PL measurements. The Stark shift of the step quantum well was much more sensitive to the applied electric field than that of the single quantum well. These results indicate that CdxZn1−xTe/ZnTe step quantum wells hold promise for potential applications such as new types of modulators and quantum-well infrared photodetectors in the blue–green region of the spectrum. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120760
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  • 9
    Electronic Resource
    Electronic Resource
    Photoluminescence and photoreflectance from GaAs/AlAs multiple quantum wells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3376-3379 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) and photoreflectance (PR) measurements have been performed to investigate the intermixing behavior of Al and Ga in GaAs/AlAs multiple quantum wells (MQWs) grown by molecular-beam epitaxy and treated by rapid thermal annealing. These results indicate that the magnitude of the disordering for a GaAs/AlAs MQW increases as the layer thickness increases. When the GaAs/AlAs MQWs with layer thicknesses of 34 A(ring) are annealed at 950 °C for 10 s, the GaAs/AlAs MQWs are totally intermixed, resulting in a formation of an Al0.45Ga0.55As alloy. For the intermixed GaAs/AlAs MQWs, PL spectra show dominantly the Γ-valley direct transition, and PR signals show that the peaks originating from the interband transitions disappear. The observed increases of the full width at half-maximum (FWHM) in the PL spectra for the annealed GaAs/AlAs MQWs originate from the nonuniformity of the intermixing as a function of depth, and the decrease of FWHM in the PL spectra for the GaAs/AlAs MQWs annealed for longer times is due to the formation of Al0.45Ga0.55As alloys in the GaAs/AlAs MQWs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359965
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  • 10
    Electronic Resource
    Electronic Resource
    The interfacial layer formation of the Al2O3/Si structures grown by low-pressure metalorganic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 760-762 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic chemical vapor deposition of Al2O3 using Al(O-C3H7)3 and N2O via pyrolysis was investigated with the goal of producing Al2O3 epitaxial films on p-Si (100) substrates. Room-temperature capacitance-voltage measurements clearly showed metal-insulator-semiconductor behaviors for the samples with the Al2O3 insulator gate, and the interface state densities at the Al2O3/p-Si interface were approximately 1011 eV−1 cm−2 at the middle of the Si energy gap. Auger depth profiles demonstrated that the Al2O3/Si interface was not abrupt, and transmission electron microscopy verified the formation of an interfacial layer in the Al2O3/Si interface and the formation of a polycrystalline Al2O3 thin film. These results indicated that the failure to form Al2O3 epitaxial films was due to the formation of an interfacial layer prior to the growth of the Al2O3 layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355224
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