Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1
    Electronic Resource
    Electronic Resource
    Nondestructive photoacoustic detection of exciton resonances in GaAs/AlGaAs multiple quantum well structures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 745-747 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report nondestructive observations of both heavy-hole and light-hole excitons in the GaAs/AlGaAs multiple quantum wells (MQWs) using photoacoustic spectroscopy. The absorption spectra were measured by the gas-microphone photoacoustic technique with a minimal volume cell and grazing incidence method. Two distinct peaks were clearly observed in the photoacoustic signal and phase spectra of the MQW at room temperature. A photoreflectance measurement for the given MQW structure revealed that two peaks originated from the heavy-hole and light-hole excitonic resonances.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111053
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    The interfacial layer formation of the Al2O3/Si structures grown by low-pressure metalorganic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 760-762 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic chemical vapor deposition of Al2O3 using Al(O-C3H7)3 and N2O via pyrolysis was investigated with the goal of producing Al2O3 epitaxial films on p-Si (100) substrates. Room-temperature capacitance-voltage measurements clearly showed metal-insulator-semiconductor behaviors for the samples with the Al2O3 insulator gate, and the interface state densities at the Al2O3/p-Si interface were approximately 1011 eV−1 cm−2 at the middle of the Si energy gap. Auger depth profiles demonstrated that the Al2O3/Si interface was not abrupt, and transmission electron microscopy verified the formation of an interfacial layer in the Al2O3/Si interface and the formation of a polycrystalline Al2O3 thin film. These results indicated that the failure to form Al2O3 epitaxial films was due to the formation of an interfacial layer prior to the growth of the Al2O3 layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355224
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Thermal stability of sulfur-treated InP investigated by photoluminescence (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4052-4057 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of sulfur (S) treatments on InP is investigated by low-temperature photoluminescence (PL) measurements. For both n- and p-InP, the PL intensity is observed to increase about four times in magnitude if the scattering by the S overlayer is relatively small. Some PL bands are observed to disappear after S treatments and then reappear if the S-treated surface is heat treated at 220 °C in a vacuum of 10−3 Torr. By observing their dependence on the excitation power density, the doping level of the samples, and measurement temperature, these PL bands are ascribed to the optical transitions via surface states. Our results thus indicate that the S-treated InP surface may not be stable at a subsequent processing temperature of about 250 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363366
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Structural and optical properties in ZnTe/GaAs strained heterostructures grown by temperature-gradient vapor transport deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8216-8218 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A lattice-mismatched ZnTe epilayer on a GaAs(100) substrate was grown by the simple method of temperature-gradient vapor deposition. X-ray diffractometry measurements were performed to investigate the structural properties of the ZnTe layer. Raman spectroscopy measurements showed that there was a lattice mismatch between the ZnTe epitaxial layer and the GaAs substrate. Reflectivity and photoreflectance measurements clearly revealed the splitting of the valence-band maximum, and photoluminescence measurements showed several resonant excitations of the ZnTe. The binding energies of the light holes and heavy holes determined from the splittings are in reasonable agreement with the bulk values.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356526
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectroscopy study of CaS:Eu and SrS:Eu phosphors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4546-4549 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phosphors of alkali-earth sulfides SrS:Eux (x=0.05 and 0.10 mole per mole of SrS), SrSO:Eux (x=0.05), and CaS:Eux (x=0.0005, 0.05, and 0.10) were studied by x-ray photoelectron spectroscopy. The CaS:Eu phosphors were found to be stabilized against atmospheric water vapor and carbon dioxide by annealing at high temperature for several hours. The S 2p core level shows that the chemical state of sulfur changes abruptly from −2 to +6 between the annealing temperature of 900 and 1100 °C. The Ca core level, on the other hand, does not show much change depending on the annealing temperature. From the Eu 3d core-level spectra of SrS:Eux and CaS:Eux (x=0.10) phosphors, we confirm that the valence state of Eu in these phosphors is Eu3+.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352799
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Interface properties and capacitance-voltage behavior of indium phosphide metal-insulator-semiconductor prepared by plasma-assisted oxidation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7918-7920 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A remote plasma-enhanced oxidation method, with two different reactant gases of N2O and POCl3, is used to grow stable insulating layers on an InP substrate. The compositional profile of the oxide grown with N2O reactant was very similar to that of thermally grown oxide. The hysteresis of capacitance-voltage (C-V) characteristics in this system was relatively small and determined by the compensative effects of mobile charges in the oxide and the capture of electrons at the interface. The very unstable nature of the C-V characteristics in the metal-insulator-semiconductor (MIS) diode prepared with POCl3 reactant seems to be related to the gradual nature of the interface and/or the P-oxide deficiency at the interface. Even if a stable oxide layer of InPO4 can be grown by POCl3 plasma, the very poor nature of the transition region must be overcome to achieve a good MIS structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347482
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Growth of CdTe epitaxial films on p-InSb(111) by temperature gradient vapor transport deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1049-1051 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of high quality CdTe epitaxial films on p-InSb(111) by a simple method of temperature gradient vapor transport deposition was carried out to investigate the possibility of the existence of a two-dimensional electron gas with high mobility at CdTe/InSb heterointerfaces. From the x-ray diffraction analysis, the grown layer was found to be a CdTe epitaxial film. Photoluminescence measurements at 15 K showed that a CdTe film grown on InSb(111) in the temperature range between 180 and 280 °C appeared to have an optimum crystal perfection at a substrate temperature of about 245 °C. These results also indicated that the CdTe films grown above 245 °C contained a significant problem due to interdiffusion from the InSb substrates during the growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351360
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Spectroscopic ellipsometry study of SrBi2Ta2O9 ferroelectric thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1664-1666 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties of SrBi2Ta2O9 (SBT) ferroelectric thin films were investigated by spectroscopic ellipsometry at room temperature in the 1.5–5.5 eV spectral range. The films were grown on platinized silicon (Pt/Ti/SiO2/Si) with a Bi/Sr ratio (x) range from 1.2 to 2.8 by pulsed-laser deposition. The measured pseudodielectric functions of the samples indicate the band-gap energy of SBT shifts to lower energies as x increases. The optical constants and band-gap energies of the SBT films were determined through multilayer analyses on their pseudodielectric functions. The band-gap energy of SBT is found to shift to lower energies quite linearly with x. The band-gap energy at stoichiometric composition (x=2) is estimated to be 4.1 eV. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402654
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Interband transitions in CdTe/ZnTe single quantum wells grown by temperature-gradient vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3194-3196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several CdTe/ZnTe strained single quantum well structures with widths ranging from 5 to 20 A(ring) were grown on GaAs (100) substrates by double-well temperature-gradient vapor-transport deposition. Photoluminescence (PL) measurements on the strained single quantum-well structures showed that the sharp excitonic peaks corresponding to the transitions from the first electronic subband to the first heavy-hole band (E1–HH1) below the critical thickness of the CdTe well were shifted to lower energy with increasing well width. However, the results of the PL spectra above the critical thickness of the CdTe clearly showed broad excitonic peaks, originating from the dislocations in the CdTe quantum well, corresponding to the (E1–HH1) transitions. Electronic subband energies were calculated by an envelope function approximation taking into account the strain effects, and the transition values were in good agreement with those obtained from the experimental measurements. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113720
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Amphoteric behavior of Sn in In0.5Ga0.5P layers grown by liquid phase epitaxy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2014-2018 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sn-doped In0.5Ga0.5P epilayers, grown on semi-insulating (100) GaAs substrates by the liquid phase epitaxy technique, have been investigated using photoluminescence and Hall effect measurements from 15 to 300 K. The Sn dopant in InGaP shows amphoteric behavior with a compensation ratio of ∼0.4–0.6. Transitions involving shallow Sn acceptors have been identified through photoluminescence measurements for the first time and the ionization energy of Sn was determined to be 57 meV, which is in good agreement with the hydrogenic acceptor value. It was also found that the Sn shallow donor has an ionization energy 17–12 meV with increasing carrier concentrations through Hall measurements. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366931
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...