Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    A new approach to the Schrodinger equation with rational potentials
    Amsterdam : Elsevier
    Physics Letters A 101 (1984), S. 473-478 
    Details
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0375-9601(84)90421-3
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Nondestructive photoacoustic detection of exciton resonances in GaAs/AlGaAs multiple quantum well structures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 745-747 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report nondestructive observations of both heavy-hole and light-hole excitons in the GaAs/AlGaAs multiple quantum wells (MQWs) using photoacoustic spectroscopy. The absorption spectra were measured by the gas-microphone photoacoustic technique with a minimal volume cell and grazing incidence method. Two distinct peaks were clearly observed in the photoacoustic signal and phase spectra of the MQW at room temperature. A photoreflectance measurement for the given MQW structure revealed that two peaks originated from the heavy-hole and light-hole excitonic resonances.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111053
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Free-carrier absorption of Hg1−xCdxTe epitaxial films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7738-7742 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Free-carrier absorption (FCA) of Hg1−xCdxTe epitaxial films is analyzed by considering the composition-in-depth nonuniformity of epilayers. The results show that epilayers exhibit different FCA behavior from bulk materials. Based on the analyses, the carrier concentration, the density and size distribution of Te precipitates, as well as the inclusion in Hg1−xCdxTe epilayers are derived from fitting the measured FCA spectra. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362342
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Composition and temperature dependence of the refractive index in Hg1−xCdxTe (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4176-4179 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intrinsic absorption spectra for very thin Hg1−xCdxTe bulk samples with compositions x ranging from 0.276 to 0.443 have been obtained at different temperatures. Based on the measured absorption curves and Kramers–Kronig relation, the refractive index dispersion has been calculated in the wavelength region near and below the band gap at temperatures from 4.2 to 300 K. For Hg1−xCdxTe samples with x from 0.276 to 0.443, the dispersion relation can be described by an empirical formula: n(λ,T)2=A+B/[1−(C/λ)2]+Dλ2, where the parameters A, B, C, and D are both temperature and composition dependent. In addition, a peak in the deduced dispersion spectra appears just at the wavelength corresponding to the band-gap energy Eg(x,T) of Hg1−xCdxTe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356001
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Potential model for the subband structures in the inversion layer of narrow-gap semiconductor heterostructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3608-3610 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on the capacitance–voltage (CV) characteristics of semiconductor metal-insulator- semiconductor (MIS) heterostructures and the nonparabolic characteristics of narrow-gap semiconductors (NGSs), a surface potential model has been developed to derive subband structures of two-dimensional electron gas systems in an inversion layer of NGS MIS heterostructures. CV measurement was also performed on a p-type InSb MIS heterostructure, and two onsets of electron filling more than one subband were observed. Subband structures were also obtained using the presented potential model. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361378
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Hole subband in p-type channel of semiconductor heterostructures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7998-8000 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on the characteristics of semiconductor surface capacitance, an experimental model is presented for evaluating the hole subband structures in the p-type channel of semiconductor heterostructures. For an n-type InSb metal-oxide-semiconductor sample, the capacitance-voltage spectroscopy is measured and the hole subband structure is derived with using the model presented. The result shows that the Fermi level is always pinned near the bottom of the hole subband, which is attributed to the large density of states of the hole subband. Relevant parameters are also obtained for the hole subband including the subband energy, Fermi level, inversion layer width, and depletion layer width, etc. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357914
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Fine silicon oxide particles in rf hollow magnetron discharges (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4741-4745 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation and the properties of fine silicon oxide particles in a hollow post-type rf magnetron discharge in SiH4/O2/Ar gas mixtures were studied. For P(approximately-greater-than)30 mTorr, primary fine particles (PFPs) with a diameter of about 20 nm are formed through homogeneous reactions. Their diameter increases with the system pressure. PFPs with sufficient negative charge are suspended in the plasma. They can further aggregate with other PFPs to form aggregated fine particles (AFP) with nearly spherical shape and larger diameter. The size of the AFP depends on the duration of the rf power. In the cw mode, AFPs gradually drift axially to both ends of the discharge system. The accumulation of AFPs at the end trap causes low-frequency oscillation of the discharge. The films consisting of fine particles are loose and brittle. Infrared-absorption spectrum shows that oxide formed in the homogeneous reaction has similar Si—O bond strain relaxation to that of the thermal oxides and the annealed oxide from chemical-vapor deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354343
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Ultraviolet-infrared optical properties of highly (100)-oriented LaNiO3 thin films on Pt–Ti–SiO2–Si wafer (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2699-2702 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical constants of highly (100)-oriented LaNiO3 thin films on Pt(111)-Ti–SiO2–Si substrate derived by metalorganic deposition have been obtained using spectroscopic ellipsometry techniques in the wide wavelength range from ultraviolet to far infrared. In fitting the dielectric functions of LaNiO3, two harmonic oscillators are observed, one is believed to come from the valence–conduction interband transition and the other is attributed to the transition from a donor band to the conduction. Simultaneously the frequency of plasmon is also obtained, which results from the strong electron–electron interaction. Based on these optical and electrical properties, a promising application of LaNiO3 thin films in infrared microsensors has been proposed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1394903
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1909-1911 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Shubnikov–de Haas (SdH) oscillation measurement was performed on highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates at a temperature of 1.4 K. By analyzing the experimental data using fast Fourier transform, the electron densities and mobilities of more than one subband are obtained, and an obvious double-peak structure appears at high magnetic field in the Fourier spectrum. In comparing the results of SdH measurements, Hall measurements, and theoretical calculation, we found that this double-peak structure arises from spin splitting of the first-excited subband (i=1). Very close mobilities of 5859 and 5827 cm2/V s are deduced from this double-peak structure. The sum of the carrier concentration of all the subbands in the quantum well is only 3.95×1012 cm−2 due to incomplete transfer of the electrons from the Si δ-doped layer to the well. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1396625
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Changes in the interface capacitance for fatigued lead–zirconate–titanate capacitors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2548-2550 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: From the capacitance–voltage dependence of Pt/PbZr0.5Ti0.5O3/Pt capacitors, we mathematically separated the capacitance into two parts corresponding to two regions of the samples, the uniform electric-field region and the nonuniform region. They are correlated with the bulk ferroelectric film region and the Pt/PbZr0.5Ti0.5O3 Schottky barrier interface region, respectively. The calculations based on the in-series capacitor model show a slight decrease of dielectric permitivity for the fatigued bulk films. By assuming a much smaller dielectric permitivity of the interface region than that of bulk films, it was found that the interface capacitance decreased remarkably compared with that of the bulk ferroelectric film after fatigue. This decrease was attributed to the lowering of ferroelectricity in the interface layer, which suggests that the fatigue is mainly an interface state controlled process. The asymmetricity in the interface capacitance–voltage curve is attributed to the different defect concentration levels in the top and bottom interface regions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367301
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...