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  • 1
    Electronic Resource
    Electronic Resource
    Nonlinear optical properties of CdSe quantum dots (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8041-8045 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nonlinear optical properties of CdSe quantum dots are investigated using self-saturation and degenerate four-wave mixing techniques. The saturation of the room temperature absorption coefficient, for a wavelength in the vicinity of the first exciton peak, is measured. The measured data can be predicted from a description of the quantum dot as a two level, homogeneously broadened, saturating system. The variation of the four-wave mixing reflectivity with intensity and with wavelength is reported. All four-wave mixing data are also consistent with the homogeneously-broadened two-level model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353919
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  • 2
    Electronic Resource
    Electronic Resource
    Band gap shrinkage in GaInAs/GaInAsP/InP multi-quantum well lasers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 279-281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated a band gap shrinkage in both lattice-matched and compressive strained GaInAs/GaInAsP/InP multi-quantum well lasers. The band gap shrinkage is obtained from the broadening of the low energy side in the spectrum by considering effects of an intraband scattering and a fundamental band edge. It amounts to 20–25 meV at sheet carrier densities of above 1012 cm−2, and shows n1/1.3 dependence at low carrier densities and n1/3 dependence at higher densities. These dependencies agree well with theoretical predictions in the quantum well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352129
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  • 3
    Electronic Resource
    Electronic Resource
    Interimpurity transitions in heavily doped semiconductors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5916-5918 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the first observation of theoretical predictions that, even in the case of a single acceptor level, the luminescence spectrum can have more than one peak depending on the temperature and pumping rate. Two peaks are observed: One peak (peak A) is related to the tail-impurity transition, and the other (peak B) to the band-impurity transition. The intensity of peak A is quenched at low and high temperatures, reaching its maximum value at about 30 K. At a high current and high temperature, peak B dominates and its energy increases with temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346918
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  • 4
    Electronic Resource
    Electronic Resource
    Optical gain measurements based on fundamental properties and comparison with many-body theory (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2945-2952 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present high accuracy measurements of gain, loss, and transparency energy in long-wavelength semiconductors based on a hybrid approach using the fundamental relationship between the gain and the spontaneous emission spectra. Independent measurements of optical gain, transparency energy, and loss show the accuracy and validity of this technique. These results are compared with those obtained by the non-Markovian gain model with many-body effects under the spontaneous emission transformation method. It is found that the hybrid approach for the gain spectrum alleviates many of the problems related to the poor signal to noise ratio in the amplified-spontaneous emission near and below the band edge. The theoretical spectra compare well with the measured spectra for both the transverse electric and transverse magnetic polarizations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371153
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  • 5
    Electronic Resource
    Electronic Resource
    Deep-level impurities in edge-defined film-fed-growth silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 801-810 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Edge-defined film-fed-growth (EFG) Si is investigated using deep-level transient spectroscopy and surface photovoltage. An impurity energy level of CrB was found at 0.27 eV above the valence band in EFG Si contaminated with Cr. The Cr diffusion coefficient in EFG Si was obtained as 2×10−17 cm2/s at room temperature using association and dissociation of CrB pairs after a 210 °C dissociation anneal. Most of the deep-level transient spectroscopy (DLTS) spectra are not analyzable with conventional methods due to abnormally broad peaks. DLTS spectra of as-grown EFG Si are modeled using a Gaussian distribution of impurity energy states. The simulated DLTS peaks agree well with measured data explaining the origin of the deep-level impurities of EFG Si. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360338
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  • 6
    Electronic Resource
    Electronic Resource
    Nondestructive propagation loss and facet reflectance measurements of GaAs/AlGaAs strip-loaded waveguides (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6318-6320 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modified Fabry–Perot resonance technique using a single cavity was proposed to obtain the propagation loss of the optical waveguide. The propagation loss as well as the facet reflectance were measured without sequential cleavage for a GaAs/AlGaAs strip-loaded waveguide based on the contrast ratios of the reflected and transmitted interference patterns. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360729
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  • 7
    Electronic Resource
    Electronic Resource
    Room-temperature excitonic optical nonlinearities of molecular beam epitaxially grown ZnSe thin films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 182-184 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large optical nonlinearities have been observed in molecular beam epitaxially grown thin films of ZnSe at room temperature and at T=150 K. A comparison with a plasma theory indicates that in both cases exciton screening is the dominating mechanism for the nonlinearity. The maximum nonlinear index per excited electron-hole pair at room temperature is comparable to that of bulk GaAs and GaAs-AlGaAs multiple quantum wells. The measured absorption and nonlinear index spectra agree quite well with our calculated values.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99513
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  • 8
    Electronic Resource
    Electronic Resource
    Measurements of room-temperature band-gap-resonant optical nonlinearities of GaAs/AlGaAs multiple quantum wells and bulk GaAs (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1201-1203 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a systematic study of the dependence of the optical nonlinearities on quantum well thickness for GaAs/AlGaAs multiple quantum wells (MQW's) at room temperature and compare them with bulk GaAs. The maximum change in the refractive index is greatest for the MQW's with the smallest well size and decreases with increasing well size, reaching a minimum for bulk GaAs. The maximum index change per photoexcited carrier increases by a factor of 3 as the well size decreases from bulk to 76 A(ring) MQW.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99157
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  • 9
    Electronic Resource
    Electronic Resource
    Mechanism of donor–acceptor pair recombination in Mg-doped GaN epilayers grown on sapphire substrates (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2082-2085 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature-dependent photoluminescence (PL) measurements in Mg-doped GaN epitaxial layers grown on sapphire substrates by plasma-assisted molecular beam epitaxy have been performed in order to investigate the process of donor–acceptor pair (DAP) recombination. The PL intensity of the DAP peak decreases below 35 K, and then it increases as the temperature increases in the temperature range between 35 and 100 K. This behavior originates from the interaction between two different Mg-related traps, one shallow and the other deep level. The ionization energies of the shallow trap and the deep level trap determined from the calculations and the PL experiments are 126 and 160 meV, respectively. The DAP recombination process suggests that holes are caught in the shallow trap and that they subsequently transfer, via a tunneling process, from the shallow trap to the deep trap, where recombination with electrons takes place. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368269
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of the band-tail states on the exciton peaks in GaN epilayers grown on sapphire substrates (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 790-793 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) measurements have been carried out to investigate the effects of the band-tail states on the exciton lines in unintentionally doped and Mg-doped GaN epilayers grown on sapphire substrates by using plasma-assisted molecular beam epitaxy. The results of the PL spectra for the Mg-doped epilayers show that the peak positions of the bound exciton lines shift to higher energy with increasing temperature within the low-temperature region. The radiative recombinations of the carriers are related to the band-tail states, and the temperature-dependent blueshifts are analyzed by using a Gaussian distribution of charged impurities. The calculated thermal activation energies of the band-edge emission lines show that those lines in Mg-doped GaN epilayers are related to ionized donor bound exciton recombinations. These results indicate that the positions and the intensities of the exciton peaks observed in Mg-doped GaN films are significantly affected by the concentration of the magnesium dopant. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373738
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