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  • 1
    Electronic Resource
    Electronic Resource
    Free-carrier absorption of Hg1−xCdxTe epitaxial films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7738-7742 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Free-carrier absorption (FCA) of Hg1−xCdxTe epitaxial films is analyzed by considering the composition-in-depth nonuniformity of epilayers. The results show that epilayers exhibit different FCA behavior from bulk materials. Based on the analyses, the carrier concentration, the density and size distribution of Te precipitates, as well as the inclusion in Hg1−xCdxTe epilayers are derived from fitting the measured FCA spectra. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362342
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  • 2
    Electronic Resource
    Electronic Resource
    Composition and temperature dependence of the refractive index in Hg1−xCdxTe (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4176-4179 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intrinsic absorption spectra for very thin Hg1−xCdxTe bulk samples with compositions x ranging from 0.276 to 0.443 have been obtained at different temperatures. Based on the measured absorption curves and Kramers–Kronig relation, the refractive index dispersion has been calculated in the wavelength region near and below the band gap at temperatures from 4.2 to 300 K. For Hg1−xCdxTe samples with x from 0.276 to 0.443, the dispersion relation can be described by an empirical formula: n(λ,T)2=A+B/[1−(C/λ)2]+Dλ2, where the parameters A, B, C, and D are both temperature and composition dependent. In addition, a peak in the deduced dispersion spectra appears just at the wavelength corresponding to the band-gap energy Eg(x,T) of Hg1−xCdxTe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356001
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  • 3
    Electronic Resource
    Electronic Resource
    Potential model for the subband structures in the inversion layer of narrow-gap semiconductor heterostructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3608-3610 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on the capacitance–voltage (CV) characteristics of semiconductor metal-insulator- semiconductor (MIS) heterostructures and the nonparabolic characteristics of narrow-gap semiconductors (NGSs), a surface potential model has been developed to derive subband structures of two-dimensional electron gas systems in an inversion layer of NGS MIS heterostructures. CV measurement was also performed on a p-type InSb MIS heterostructure, and two onsets of electron filling more than one subband were observed. Subband structures were also obtained using the presented potential model. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361378
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  • 4
    Electronic Resource
    Electronic Resource
    Hole subband in p-type channel of semiconductor heterostructures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7998-8000 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on the characteristics of semiconductor surface capacitance, an experimental model is presented for evaluating the hole subband structures in the p-type channel of semiconductor heterostructures. For an n-type InSb metal-oxide-semiconductor sample, the capacitance-voltage spectroscopy is measured and the hole subband structure is derived with using the model presented. The result shows that the Fermi level is always pinned near the bottom of the hole subband, which is attributed to the large density of states of the hole subband. Relevant parameters are also obtained for the hole subband including the subband energy, Fermi level, inversion layer width, and depletion layer width, etc. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357914
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  • 5
    Electronic Resource
    Electronic Resource
    Stages of chaotic synchronization (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Chaos 8 (1998), S. 697-701 
    Details
    ISSN: 1089-7682
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In an experimental investigation of the response of a chaotic system to a chaotic driving force, we have observed synchronization of chaos of the response system in the forms of generalized synchronization, phase synchronization, and lag synchronization to the driving signal. In this paper we compare the features of these forms of synchronized chaos and study their relations and physical origins. We found that different forms of chaotic synchronization could be interpreted as different stages of nonlinear interaction between the coupled chaotic systems. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.166352
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  • 6
    Electronic Resource
    Electronic Resource
    Ultraviolet-infrared optical properties of highly (100)-oriented LaNiO3 thin films on Pt–Ti–SiO2–Si wafer (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2699-2702 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical constants of highly (100)-oriented LaNiO3 thin films on Pt(111)-Ti–SiO2–Si substrate derived by metalorganic deposition have been obtained using spectroscopic ellipsometry techniques in the wide wavelength range from ultraviolet to far infrared. In fitting the dielectric functions of LaNiO3, two harmonic oscillators are observed, one is believed to come from the valence–conduction interband transition and the other is attributed to the transition from a donor band to the conduction. Simultaneously the frequency of plasmon is also obtained, which results from the strong electron–electron interaction. Based on these optical and electrical properties, a promising application of LaNiO3 thin films in infrared microsensors has been proposed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1394903
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  • 7
    Electronic Resource
    Electronic Resource
    Infrared optical properties of LaNiO3–platinized silicon and PbZrχTi1−χO3–LaNiO3–platinized silicon heterostructures (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 793-795 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using infrared spectroscopic ellipsometry, the optical constants of LaNiO3 thin films on Pt(111)–Ti–SiO2–Si substrates are obtained in the 2.5–12.6 μm range, in which the infrared optical constants decrease when the annealing temperature increases from 600 to 650 °C. At the same time, the infrared optical properties of PbZrχTi1−χO3(PZT) thin films with χ=0.3 and 0.5 on LaNiO3–Pt–Ti–SiO2–Si substrates are simultaneously studied with respect to annealing temperatures. The infrared optical properties are associated closely with the grain size and crystallographic orientation of the films induced by annealing temperature, combined by the particular substrate. For the Ni–PZT–LaNiO3–Pt multilayer heterostructures, the infrared absorptance better than 99% can be achieved for PZT pyroelectric thin film infrared microsensors. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1347403
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  • 8
    Electronic Resource
    Electronic Resource
    Magneto-transport properties of semiconductors from flatband magnetocapacitance spectroscopy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1250-1254 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We introduce the flatband magnetocapacitance measurement to study magnetotransport properties in bulk semiconductors. This method is better, in some cases, than the Hall measurement because it can avoid some problems inherent to the latter method, such as the influence of the surface conducting layer, the carrier mobility, and the sample geometry correction factor. By using this experimental method some interesting phenomena concerning magnetotransport properties in an n-type InSb sample were observed, including Shubnikov–de Haas oscillations, resonant defect states, conduction process transitions, and the metal–insulator phase transition. The experimentally determined magnetotransport properties for the InSb sample are compared with those reported in literature. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363866
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical characterization of subbands in the HgCdTe surface layer (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5000-5004 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The subband dispersion relations have been computed as a function of the surface electron concentration in the accumulation layers of n-Hg1−xCdxTe photoconductive detectors, while the mobility and concentration for all kinds of carriers in the subband are determined from Shubnikov-de Haas (SdH) oscillation measurements and quantitative mobility spectrum analysis (QMSA). The results show that the QMSA can provide accurate electric parameters for all kinds of carriers in the subband without considering the complex energy band in the semiconductors, while the SdH oscillation can only offer qualitative data because the analysis is based on parabolic energy band approximation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366369
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  • 10
    Electronic Resource
    Electronic Resource
    Direct observation of vibrational modes in Hg1−xCdxTe (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3272-3274 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The vibrational modes in Hg1−xCdxTe epitaxial films and HgTe/CdTe superlattices have been investigated by means of far-infrared (FIR) transmittance spectra at temperatures from 4.2 to 300 K. The observations were put forward in the spectral range from 20 to 350 cm−1, emphasizing the wave-number region at the low-frequency side of the reststrahlen absorption band. A series of single-phonon and two-phonon modes as well as impurities- and defects-induced vibrational modes are observed. FIR transmission seems to be a good probe for characterization of the perfection of Hg1−xCdxTe films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116571
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