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  • 1
    Electronic Resource
    Electronic Resource
    Optical properties of BeCdSe/ZnCdMgSe strained quantum well structures (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5135-5138 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the optical properties of BeCdSe/ZnCdMgSe single quantum well (QW) structures that consist of closely lattice matched ZnCdMgSe barrier layers and a strained BeCdSe QW layer (Δa/a=1.95%) grown on InP substrates. Emission from the red to the green regions of the visible spectrum was obtained from the structures with the QW thickness varying from 95 to 12 Å. Efficient QW emission, dominated by an exciton recombination behavior, was observed. From the Arrhenius plot of the integrated emission intensity as a function of temperature, an activation energy of 61 meV was obtained for a BeCdSe QW structure with a 48 Å thick QW layer. Parameters that describe the temperature dependence of the near band edge emission energy and the broadening of the excitonic emission were evaluated. Our results indicate that the BeCdSe-based QW structures are attractive for application as red light emitters. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1413232
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  • 2
    Electronic Resource
    Electronic Resource
    Distributed Bragg reflectors based on (Zn, Cd, Mg)Se for use in the visible spectral range (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2202-2207 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Distributed Bragg reflectors (DBRs) based on ZnCdSe and ZnCdMgSe quarter wave layers have been grown on InP (001) substrates by molecular beam epitaxy. Their reflectivity maxima were controlled by the individual thicknesses of constituent layers, and were adjusted in the range of 615–500 nm, covering the red, green, and blue-green regions of the visible spectrum. The crystal quality of the structures was assessed by double crystal x-ray diffraction measurements. Reflectivity as high as 95% was achieved for the DBR structures that consisted of 16 periods. Theoretical calculations, based on the transfer matrix method, predict that a reflectivity above 99% can be achieved by increasing the number of periods to between 20 and 26. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337598
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  • 3
    Electronic Resource
    Electronic Resource
    High p-type doping of ZnBeSe using a modified delta-doping technique with N and Te (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1725-1729 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High crystalline quality ZnBeSe epilayers were grown nearly lattice matched to GaAs (001) substrates by molecular beam epitaxy with a Be–Zn co-irradiation. A (1×2) reflection high energy electron diffraction pattern was observed after the Be–Zn co-irradiation of the GaAs (2×4) surface. A high p-type doping level of 1.5×1018 cm−3 was achieved for (N+Te) triple-delta doping (δ3 doping) of ZnBeSe epilayers, whereby three adjacent δ layers of N and Te were deposited in each doping cycle. X-ray diffraction measurements reveal that (N+Te) δ3-doped ZnBeSe samples with a Te concentration of about 0.5% remain of very high crystalline quality with an X-ray rocking curve linewidth of 51 arcsec. Low temperature photoluminescence measurements show some emission peaks related to Te2 clusters and/or Ten≥3 clusters. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384863
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  • 4
    Electronic Resource
    Electronic Resource
    Growth and characterization of BeCdSe alloys and BeCdSe/ZnCdMgSe quantum wells on InP substrates (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2473-2475 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the molecular-beam-epitaxy growth and characterization of BexCd1−xSe (0.06〈x〈0.2) epilayers and Be0.08Cd0.92Se/Zn0.32Cd0.25Mg0.43Se quantum-well (QW) structures on InP substrates. Good optical properties and high crystalline quality were established using photoluminescence and x-ray diffraction measurements. Narrow x-ray rocking curves with line widths down to 49 arc sec were obtained for Be0.2Cd0.8Se, closely lattice-matched to InP. A strong luminescence emission with energy of 2.072 eV and a full width at half maximum of 27 meV at 77 K was obtained from a QW structure with a 48-Å-thick QW. Strong room-temperature luminescence was also observed from the QW. A linear dependence of the QW photoluminescence intensity on the excitation laser density and an absence of shift in the emission energy indicates that the QW emission has an excitonic behavior. Based on these results and on the expected lattice-hardening properties of BeSe, we propose that BeCdSe is an attractive quantum-well material for visible light-emitting diodes. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368192
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  • 5
    Electronic Resource
    Electronic Resource
    Distributed Bragg reflectors for visible range applications based on (Zn,Cd,Mg)Se lattice matched to InP (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4107-4109 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice-matched (Zn,Cd,Mg)Se epilayers were grown by molecular-beam epitaxy on InP substrates. X-ray diffraction and photoluminescence measurements show the high crystalline quality of the epilayers. Using a prism coupler technique, the index of refraction of the epilayers was investigated at four discrete wavelengths. With these results, (Zn,Cd,Mg)Se-based distributed Bragg reflector structures have been grown, covering nearly the entire visible spectral range. A maximum reflectivity of 95% has been achieved for structures having 16 periods. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1334650
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  • 6
    Electronic Resource
    Electronic Resource
    Enhancement of p-type doping of ZnSe using a modified (N+Te)δ -doping technique (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2205-2207 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Delta doping techniques have been investigated to enhance the p-type doping of ZnSe. Tellurium was used as a codopant for improving the nitrogen doping efficiency. The net acceptor concentration (NA−ND) increased to 1.5×1018 cm−3 using single δ doping of N and Te (N+Te), while it was limited to 8×1017 cm−3 by δ doping of N alone. A promising approach was developed in which three consecutive δ-doped layers of N+Te were deposited for each δ-doping cycle. An enhancement in the (NA−ND) level to 6×1018 cm−3 has been achieved in ZnSe using this technique. The resultant layer has an average ZnTe content of only about 3%. This doping method shows potential for obtaining highly p-type doped ohmic contact layers without introducing significant lattice mismatch to ZnSe. Low-temperature photoluminescence spectra reveal some Te-related emissions. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126297
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  • 7
    Electronic Resource
    Electronic Resource
    Molecular-beam epitaxy growth and nitrogen doping of ZnSe1−xTex alloys grown on InP substrates (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2608-2610 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality ZnSe1−xTex alloys spanning the entire compositional range have been grown by molecular-beam epitaxy. Good compositional control can be obtained by adjusting the beam equivalent pressure ratio of Se to Zn during growth. Double-crystal x-ray rocking curves with full widths at half maximum as narrow as 70 arcsec were obtained suggesting excellent crystalline quality. The p-type doping with nitrogen of ZnSe1−xTex alloys having Te contents from 0% to 100% has been systematically studied. The free hole concentration increases from 1017 to 1019 cm−3 as the Te content increases from 12% to 40%. The N-doped ZnSeTe lattice matched to InP has a free hole concentration of 2×1019 cm−3. This highly doped material was used as the p-type ohmic contact layer in light-emitting diodes made from ZnCdMgSe/ZnCdSe quantum-well structures grown on InP substrates that emit in the red, green and blue regions. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125093
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  • 8
    Electronic Resource
    Electronic Resource
    Quaternary Znx′Cdy′Mg1−x′−y′Se/ZnxCdyMg1−x−ySe quantum wells grown on InP substrates for blue emission (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1-3 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quaternary Znx′Cdy′Mg1−x′−y′Se/ZnxCdyMg1−x−ySe quantum well (QW) structures in which both the well and the barrier layers are composed of quaternary alloys lattice matched to InP and having various well thicknesses have been grown and investigated. A blue emission with narrow linewidth was achieved by using a relatively thick well thickness (40–60 Å). The quaternary QW emission exhibits excitonic recombination behavior and it has higher quantum efficiency than the ternary ZnxCd1−xSe/ZnxCdyMg1−x−ySe QW of comparable thickness. The temperature dependence of the photoluminescence measurements shows a high activation energy of 68 meV, indicating a strong quantum confinement by introduction of Mg in the QW region. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337631
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  • 9
    Electronic Resource
    Electronic Resource
    Patterned three-color ZnCdSe/ZnCdMgSe quantum-well structures for integrated full-color and white light emitters (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4259-4261 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth and characterization of patterned ZnCdSe/ZnCdMgSe quantum-well (QW) structures grown adjacent to each other on a single InP substrate. Each structure emits at a different wavelength range spanning the visible range. Stripe and square-shaped QW structures of different emission wavelengths, with lateral dimensions between 15 and 60 μm, were deposited sequentially by shadow mask selective area epitaxy (SAE) steps. Conventional and microphotoluminescence measurements were used to characterize the patterned QWs. They exhibit well-defined excitonic emission in the red, yellow, and green regions of the visible spectrum. This result demonstrates the feasibility of fabricating integrated full-color light emitting diode and laser-based display elements and white light sources using the ZnCdMgSe material system and shadow mask SAE. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330229
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  • 10
    Electronic Resource
    Electronic Resource
    Direct observation of vibrational modes in Hg1−xCdxTe (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3272-3274 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The vibrational modes in Hg1−xCdxTe epitaxial films and HgTe/CdTe superlattices have been investigated by means of far-infrared (FIR) transmittance spectra at temperatures from 4.2 to 300 K. The observations were put forward in the spectral range from 20 to 350 cm−1, emphasizing the wave-number region at the low-frequency side of the reststrahlen absorption band. A series of single-phonon and two-phonon modes as well as impurities- and defects-induced vibrational modes are observed. FIR transmission seems to be a good probe for characterization of the perfection of Hg1−xCdxTe films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116571
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