Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence characterization of ZnSe doped with Ga by bulk and planar doping techniques in molecular-beam epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3999-4005 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature and low-temperature (1.7-K) photoluminescence (PL) characteristics of heteroepitaxial ZnSe layers on GaAs which are doped with Ga by either conventional (bulk) or planar doping techniques are described. Low-temperature PL peaks at 2.27 and 2.0 eV involving deep acceptor levels are introduced by Ga doping, as well as newly reported shallow acceptor levels with binding energies of approximately 68 and 85 meV. The behavior of these peaks and the excitonic transitions is studied as a function of Ga-doping level and, for the case of the planar-doped layers, surface stoichiometry during doping. The exciton peaks exhibit substantially greater broadening for doping on Zn-rich surfaces than for Se-rich surfaces, corresponding to the higher carrier concentrations observed by electrical measurements in the former case. The deep acceptor levels are found to be incorporated to a lesser degree for doping on Zn-rich surfaces, while the incorporation of the 85-meV acceptor is enhanced in this case. The net electrical compensation is evidently dominated by the behavior of the deep levels. The results are explained by assuming that both deep levels involve donor-Zn vacancy complexes, whose formation is suppressed by the excess Zn flux supplied during the planar-doping process. A comparison of the exciton spectra of nominally undoped and bulk Ga-doped samples is used to demonstrate that the residual donor in the undoped material is Ga.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343342
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Reflection high-energy electron diffraction electron-stimulated desorption from ZnSe(100)(2×1)-Se surfaces (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4084-4086 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron-stimulated desorption (ESD) of Se from ZnSe(100)(2×1) surfaces prepared by molecular-beam epitaxy (MBE) and monitored with reflection high-energy electron diffraction is reported. Se atoms are removed from the growth surface according to a thermally activated ESD process. Consequently, this effect is most pronounced at higher temperatures and at lower growth rates. While ESD is commonly observed for ionic compounds, its significance for MBE growth of II-VI materials has not previously been discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343343
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Optical properties of BeCdSe/ZnCdMgSe strained quantum well structures (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5135-5138 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the optical properties of BeCdSe/ZnCdMgSe single quantum well (QW) structures that consist of closely lattice matched ZnCdMgSe barrier layers and a strained BeCdSe QW layer (Δa/a=1.95%) grown on InP substrates. Emission from the red to the green regions of the visible spectrum was obtained from the structures with the QW thickness varying from 95 to 12 Å. Efficient QW emission, dominated by an exciton recombination behavior, was observed. From the Arrhenius plot of the integrated emission intensity as a function of temperature, an activation energy of 61 meV was obtained for a BeCdSe QW structure with a 48 Å thick QW layer. Parameters that describe the temperature dependence of the near band edge emission energy and the broadening of the excitonic emission were evaluated. Our results indicate that the BeCdSe-based QW structures are attractive for application as red light emitters. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1413232
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Distributed Bragg reflectors based on (Zn, Cd, Mg)Se for use in the visible spectral range (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2202-2207 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Distributed Bragg reflectors (DBRs) based on ZnCdSe and ZnCdMgSe quarter wave layers have been grown on InP (001) substrates by molecular beam epitaxy. Their reflectivity maxima were controlled by the individual thicknesses of constituent layers, and were adjusted in the range of 615–500 nm, covering the red, green, and blue-green regions of the visible spectrum. The crystal quality of the structures was assessed by double crystal x-ray diffraction measurements. Reflectivity as high as 95% was achieved for the DBR structures that consisted of 16 periods. Theoretical calculations, based on the transfer matrix method, predict that a reflectivity above 99% can be achieved by increasing the number of periods to between 20 and 26. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337598
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    High p-type doping of ZnBeSe using a modified delta-doping technique with N and Te (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1725-1729 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High crystalline quality ZnBeSe epilayers were grown nearly lattice matched to GaAs (001) substrates by molecular beam epitaxy with a Be–Zn co-irradiation. A (1×2) reflection high energy electron diffraction pattern was observed after the Be–Zn co-irradiation of the GaAs (2×4) surface. A high p-type doping level of 1.5×1018 cm−3 was achieved for (N+Te) triple-delta doping (δ3 doping) of ZnBeSe epilayers, whereby three adjacent δ layers of N and Te were deposited in each doping cycle. X-ray diffraction measurements reveal that (N+Te) δ3-doped ZnBeSe samples with a Te concentration of about 0.5% remain of very high crystalline quality with an X-ray rocking curve linewidth of 51 arcsec. Low temperature photoluminescence measurements show some emission peaks related to Te2 clusters and/or Ten≥3 clusters. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384863
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Red–green–blue photopumped lasing from ZnCdMgSe/ZnCdSe quantum well laser structures grown on InP (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3136-3138 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature optical pumped lasing emission in the red, green, and blue has been obtained from ZnCdMgSe/ZnCdSe quantum well (QW) laser structures grown on InP substrates. The structures are nearly identical, except for variations in the thickness and/or composition of the QW layer. No other single set of semiconductor materials has been demonstrated whose structures are pseudomorphic on one single substrate, and produces light emitters throughout the entire visible range. Our results demonstrate the potential for these materials as integrated full color display devices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121571
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Optical investigations of the band structure of strained InAs/AlInAs quantum wells (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 302-304 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report photoluminescence and photoconductivity measurements on single InAs quantum wells under a 3.4% biaxial compression. The photoluminescence line, which is in the 1.2–1.6 μm wavelength range depending on well thickness, is interpreted as recombination between electrons and holes distributed over a range of confined energy states associated with quantum well width fluctuations. Photoconductivity is found to provide spectroscopic measurements of the optical transitions even for single, extremely thin quantum wells. We find excellent agreement between the measured transition energies and the result of an envelope function calculation taking into account the effect of both strain and quantum confinement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99500
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    N-type doping of lattice-matched ZnCdSe and ZnxCdyMg1−x−ySe epilayers on InP using ZnCl2 (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1472-1475 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chlorine on Se-site forms a shallow donor for ZnSe. In this article, we use Cl, obtained from ZnCl2, as the n-type dopant for ZnxCdyMg1−x−ySe lattice matched to InP, a new wide band gap II-VI material grown by molecular beam epitaxy. An 800 Å p-type doped InGaAs buffer layer was grown to improve the doping behavior, consistent with improved crystalline quality. The highest free-carrier concentrations measured by Hall effect are 7×1018 cm−3 with mobility of 240 cm2/V s and 3×1018 cm−3 with mobility of 230 cm2/V s for Zn0.5Cd0.5Se (77 K Eg=2.17 eV) and ZnCdMgSe (77 K Eg=2.74 eV), respectively. A small systematic reduction of maximum carrier concentration was observed as the quaternary layer band gap is increased. No deep level emission is introduced by the chlorine dopant. High n-type doping levels, consistent with semiconductor laser applications were achieved for quaternaries of band gaps as high as 2.9 eV. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368210
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Contactless electrical characterization and realization of p-type ZnSe (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1033-1035 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe is a potentially useful optoelectronic material for applications requiring emission in the blue region of the spectrum. However, such applications necessitate the development of p-type material, for which reliable ohmic-contact technology does not exist. To avoid difficulties associated with contact formation while developing p-type material, we combine two contactless methods, reflectance-difference spectroscopy and inductive-coupled radio-frequency loss to determine carrier type and sheet resistance, respectively. Using this information we have prepared conducting p-type ZnSe by doping the material during growth with Li.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349687
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    "Designer'' interfaces in II-VI/III-V polar heteroepitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7021-7028 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The development of composite materials incorporating both II-VI and III-V compound semiconductors, such as ZnSe and GaAs, leads to the possibility of a variety of new devices of potential importance to the communications industry. In many cases, such as those involving resonant tunneling junctions and quantum well structures, the quality of the interface between the different compound semiconductors determines the ultimate quality of the device itself. Therefore, we have investigated the factors determining this interface quality for the GaAs/ZnSe system as prepared by molecular beam epitaxy. In this system, the stoichiometry of the substrate is of paramount importance. An excess of one constituent leads to high local electrical fields and poor interface morphology. Optimum growth of ZnSe on GaAs is achieved with GaAs substrate surfaces having a stoichiometry intermediate between the As- and Ga-rich extremes. We will describe a model that defines the conditions for good interface formation and summarize experimental evidence which supports the validity of this model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347641
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...