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  • 1
    Electronic Resource
    Electronic Resource
    Band bending, Fermi level pinning, and surface fixed charge on chemically prepared GaAs surfaces (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 555-557 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We compare the nature of the band bending under GaAs surfaces prepared by alkaline sulfides [Na2S⋅9H2O, (NH4)2S] with that under oxidized GaAs surfaces. We make the point that Fermi level pinning implies band bending, but band bending does not necessarily imply "pinning.'' In either case, even weak light illumination substantially flattens the bands. On ammonium sulfide treated surfaces the fixed and trapped charge density in the dark is only ∼5×1011 electrons/cm2, but these few states are mostly neutralized at low-level forward injection. This behavior should not be confused with Fermi level pinning.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100929
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Contactless electrical characterization and realization of p-type ZnSe (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1033-1035 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe is a potentially useful optoelectronic material for applications requiring emission in the blue region of the spectrum. However, such applications necessitate the development of p-type material, for which reliable ohmic-contact technology does not exist. To avoid difficulties associated with contact formation while developing p-type material, we combine two contactless methods, reflectance-difference spectroscopy and inductive-coupled radio-frequency loss to determine carrier type and sheet resistance, respectively. Using this information we have prepared conducting p-type ZnSe by doping the material during growth with Li.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349687
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  • 3
    Electronic Resource
    Electronic Resource
    Ge redistribution in solid-phase Ge/Pd/GaAs ohmic contact formation (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 334-339 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A backside secondary ion mass spectrometry technique is employed to examine elemental redistribution in the Ge/Pd/GaAs ohmic contact as a function of annealing conditions. Dilute Al containing marker layers (Ga1−x Alx As) in the GaAs permit precise calibration and alignment of the elemental depth profiles. Double etch-stop thinning yields high depth resolution. The onset of ohmic behavior is found to occur when Ge is detected at the GaAs surface. Good ohmic behavior is observed when an interfacial layer of reacted Pd4GaAs is dispersed and complete coverage of Ge occurs. The Ge/GaAs interface is abrupt with the Ge concentration dropping by over three orders of magnitude within 100 A(ring). About 40 A(ring) of GaAs is found to be consumed during the ohmic contact formation. Degradation of the ohmic contacts, as a result of further heat treatment, was found to correlate with Ge in-diffusion into the GaAs. The results place strict limitations on doping and heterointerface models of ohmic behavior for this contact.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345258
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  • 4
    Electronic Resource
    Electronic Resource
    Nearly ideal electronic surfaces on naked In0.53Ga0.47As quantum wells (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1002-1004 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have discovered that hydroxide-coated In0.53Ga0.47Ag has the lowest known surface recombination velocity of any III-V semiconductor. To demonstrate the excellent electronic quality of such interfaces, we have measured the quantum shifts in the room-temperature luminescence spectrum of "naked'' In0.53Ga0.47As quantum wells (i.e., quantum wells with one face uncovered) in the thickness range 15–50 A(ring). These nearly ideal electronic surfaces should allow the fabrication of lateral quantum confinement structures that operate at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99226
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  • 5
    Electronic Resource
    Electronic Resource
    Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 131-133 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically thin AlGaAs/GaAs/AlGaAs double heterostructures, (5000 A(ring)), are floated off their substrates by the epitaxial liftoff technique and mounted on various high reflectivity surfaces. From the absolute photoluminescence intensity, we measure internal and external quantum efficiencies of 99.7% and 72%, respectively. High spontaneous emission quantum efficiency, is important for photon number squeezed light, diode lasers, single-mode light-emitting-diodes, optical interconnects, and solar cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109348
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  • 6
    Electronic Resource
    Electronic Resource
    Backside secondary ion mass spectrometry study of a Ge/Pd ohmic contact to InP (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1123-1125 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution SIMS (secondary ion mass spectrometry) depth profiles of Ge/Pd ohmic contacts on InP are obtained by sputter-etching from the back (semiconductor) side. The samples contain an InGaAs-etch stop layer, to allow chemical thinning, and InGaAsP marker layers, which allow alignment and calibration of the depth profiles on the nm scale. At 200 °C, a Pd-In-P alloy layer is observed to form at the contact interface. The thickness of this layer is dependent on the amount of metallic Pd available for reaction. Subsequent processing at 325 °C results in the partial dissolution of this alloy layer, as PdGe forms at the contact interface, and regrowth of the liberated InP. Ge is detected in the regrown region but is not observed to diffuse into the substrate. Ge epitaxy is not observed at the contact interface at 325 °C, in contrast to the behavior of the Ge/Pd-GaAs contact. The experimental evidence suggests that regrowth is a key step in the formation of the ohmic contact.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106428
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  • 7
    Electronic Resource
    Electronic Resource
    Van der Waals bonding of GaAs on Pd leads to a permanent, solid-phase-topotaxial, metallurgical bond (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3159-3161 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Various forms of wafer bonding have now emerged as a serious competitor to heteroepitaxy for optoelectronic integration of dissimilar semiconductor materials. Among the types of wafer bonding, perhaps the most flexible is that which employs free-standing III–V films as created by epitaxial liftoff. For some purposes, weak Van der Waals forces provide an adequate bond between the native oxides of the III–V film and its new substrate. If the substrate is coated by palladium however, a low temperature solid-phase-topotaxial reaction occurs, producing oriented Pd4GaAs under the GaAs film. In effect, the topotaxy comes about through mechanical contact alone. The resulting metallurgical bond is an ohmic contact, a thermal contact and a robust, permanent, adherent contact.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105771
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  • 8
    Electronic Resource
    Electronic Resource
    As2S3/GaAs, a new amorphous/crystalline heterojunction for the III-V semiconductors (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2241-2243 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Much of the technology of our era is based on the SiO2/Si amorphous/crystalline heterojunction interface. Now it appears that As2S3/GaAs amorphous/crystalline heterojunctions show some technological promise. We have found that properly prepared As2S3/GaAs interfaces can have reasonably good electronic quality. The interfacial recombination velocity is ≈15 000 cm/s at flat band, which results in a ∼100-fold reduction of perimeter recombination currents in p-n junction mesas. This can be important on heterojunction transistor emitter-base perimeters, solar cell and light-emitting diode perimeters, and for reducing mirror facet recombination in semiconductor lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104163
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  • 9
    Electronic Resource
    Electronic Resource
    Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2419-2421 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial liftoff is an alternative to lattice-mismatched heteroepitaxial growth. Multilayer AlxGa1−xAs epitaxial films are separated from their growth substrates by undercutting an AlAs release layer in HF acid (selectivity (approximately-greater-than)108 for x≤0.4). The resulting AlxGa1−xAs films tend to bond by natural intermolecular surface forces to any smooth substrate (Van der Waals bonding). We have demonstrated GaAs thin-film bonding by surface tension forces onto Si, glass, sapphire, LiNbO3, InP, and diamond substrates, as well as self-bonding onto GaAs substrates. In transmission electron microscopy the substrate and thin-film atomic lattices can be simultaneously imaged, showing only a thin (20–100 A(ring)) amorphous layer in between.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102896
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  • 10
    Electronic Resource
    Electronic Resource
    30% external quantum efficiency from surface textured, thin-film light-emitting diodes (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2174-2176 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There is a significant gap between the internal efficiency of light-emitting diodes (LEDs) and their external efficiency. The reason for this shortfall is the narrow escape cone for light in high refractive index semiconductors. We have found that by separating thin-film LEDs from their substrates (by epitaxial lift-off, for example), it is much easier for light to escape from the LED structure and thereby avoid absorption. Moreover, by nanotexturing the thin-film surface using "natural lithography,'' the light ray dynamics becomes chaotic, and the optical phase-space distribution becomes "ergodic,'' allowing even more of the light to find the escape cone. We have demonstrated 30% external efficiency in GaAs LEDs employing these principles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110575
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