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  • 1
    Electronic Resource
    Electronic Resource
    Epitaxy of Dissimilar Materials (1995)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 25 (1995), S. 389-415 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ms.25.080195.002133
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of the CoGa/GaAs interface (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 39-41 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interface between the (001) surface of GaAs and a CoGa layer grown by molecular beam epitaxy has been characterized using transmission electron microscopy in plan view and cross-sectional view. The interface is found to consist primarily of a network of edge dislocations with Burgers vectors a[100] and a[010] (a being the lattice parameter of the CoGa). The occurrence of these Burgers vectors indicates that these misfit dislocations are nucleated in the CoGa during growth. It is clearly shown that the threading dislocations in the CoGa originate at the misfit dislocations at the interface, while the GaAs layer underneath is free of dislocation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101748
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  • 3
    Electronic Resource
    Electronic Resource
    Growth of heavy carbon-doped GaInAs lattice matched to InP by chemical beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3139-3141 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Successful growth of p-type (∼1×1020 holes/cm−3) C-doped lattice matched GaInAs on InP(100) has been demonstrated using chemical beam epitaxy. Carbon tetrachloride was used as the C-dopant gas and p-type GaInAs was grown by chemical beam epitaxy using trimethylindium, triethylgallium and cracked arsine. Combinations of elemental and organometallic group-III sources also resulted in p-type layers. High performance C-doped base InP/InGaAs heterojunction bipolar transistors were fabricated using chemical beam epitaxy grown material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111344
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetotransport in magnetic epitaxial metal layers buried in (Ga,Al)As heterostructures (invited) (abstract) : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6117-6117 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Incorporation of magnetic, metallic quantum wells in semiconductors has added new dimensions to epitaxial heterostructures. Magnetotransport experiments explore the interplay of bandstructure, quantum confinement, dimensionality and magnetism. Rare earth monoarsenides, like ErAs, have been grown as buried layers in GaAs. The material is a semimetallic antiferromagnet that exhibits spin-disorder scattering at the Néel point. By diluting the ErAs with ScAs, lattice matching to GaAs can be achieved and these materials exhibit Shubnikov–de Haas (SdH) oscillations. The exchange interaction between the conduction band and the 4f spin deduced from SdH agrees with that derived from spin-disorder scattering. Surprisingly, down to 2 monolayers, quantum confinement does not convert the semimetal into a semiconductor. This is not understood. But, the Neel point can be seen to drop by a factor of two by following the spin-disorder scattering. In the few monolayer regime the magnetotransport can change its character and is more aptly described by bound magnetic polarons. More recently, ferromagnetic, metastable, τ-MnAl layers have also been grown on GaAs. Thin layers of τ-MnAl grow in such a way that the tetragonal axis is perpendicular to the interface. The extraordinary Hall effect and longitudinal magnetotransport confirm that the moment has the desired property of being oriented perpendicular to the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347785
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  • 5
    Electronic Resource
    Electronic Resource
    Nonspiking ohmic contact to p-GaAs by solid-phase regrowth (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5714-5718 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low-resistance and nonspiking contact consisting of a layered structure of Si/Ni(Mg) on p-GaAs is formed by solid-phase regrowth. Backside secondary-ion mass spectrometry and cross-sectional transmission electron microscopy show an initial reaction between Ni and GaAs to form NixGaAs which is later decomposed to form NiSi by reacting with the Si overlayer. This reaction leads to the solid-phase epitaxial regrowth of a p+ -GaAs layer doped with Mg. The total consumption of substrate is limited to a few hundred angstroms. The as-formed ohmic contact structure is uniform and planar with an average specific contact resistivity of ∼7×10−7 Ω cm2 on substrates doped to 8×1018 cm−3. The thermal stability of this contact scheme is also reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346990
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  • 6
    Electronic Resource
    Electronic Resource
    Ion channeling study of strained ErAs films on (001) GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4890-4893 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of ErAs were grown by molecular beam epitaxy on (100) GaAs. The lattice mismatch induced strain and subsequent lattice relaxation were studied using Rutherford backscattering spectrometry and ion channeling. The channeling results showed a strong thickness dependence for the backscattered minimum yield. Channeled angular scans showed the thin films to be fully strained up to 15 nm in thickness. Thicker films were found to relax with full relaxation not being reached until the 100-nm thickness range. The thick films were found to tilt up to 0.26° with respect to the crystal axes of the substrate. The tilt is apparently a result of the strain relaxation mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349032
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  • 7
    Electronic Resource
    Electronic Resource
    Epitaxial growth of ferromagnetic Ni2MnGa on GaAs(001) using NiGa interlayers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7357-7359 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heusler alloy Ni2MnGa thin films have been grown pseudomorphically on a relaxed NiGa interlayer on GaAs(001) by molecular-beam epitaxy. In situ reflection high-energy electron diffraction patterns, ex situ x-ray diffraction, and cross-sectional view transmission electron microscopy electron diffraction patterns confirm the single-crystal growth of Ni2MnGa. The films grow pseudomorphically on the relaxed NiGa interlayer with a tetragonal structure (a=b=5.79 Å and c=6.07 Å). Magnetic measurements using vibrating sample and superconducting quantum interference device magnetometers reveal Ni2MnGa to have an in-plane easy axis and a Curie temperature ∼350 K. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326461
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  • 8
    Electronic Resource
    Electronic Resource
    Thin film interactions of Al and Al(Cu) on TiW (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3444-3448 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin-film reactions of Al/Ti22W78 (∼10 wt. % Ti) with and without ∼2 at. % Cu in the Al were investigated by transmission electron microscopy for vacuum annealing in the temperature range 300–600 °C. The reactions are nonuniform and the presence of Cu has little effect on the reaction kinetics. Reactions are grain boundary dominated and start at 400 °C with the formation of WAl12.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335765
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  • 9
    Electronic Resource
    Electronic Resource
    Co/GaAs interfacial reactions (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3755-3762 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reactions of metals with GaAs are substantially more complex than comparable metal-silicon systems. In this paper, phase formation in the Co-GaAs system is examined in detail and contrasted with other metal-GaAs and metal-silicon systems. Both elemental and microstructural characterization techniques are used, and the limitations of each are discussed. Cobalt begins to react with GaAs at 375 °C and initially forms a ternary phase of approximate composition, Co2GaAs. Subsequent reactions or higher-temperature annealing results in the formation of binary phases CoGa and CoAs. The observed phase formation is controlled by the species with the largest diffusion coefficient, and this species is determined by the temperature. At sufficiently high annealing temperatures, arsenic is lost from the surface, and an epitaxial CoGa phase is formed on the GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339239
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  • 10
    Electronic Resource
    Electronic Resource
    Al/TiW reaction kinetics: Influence of Cu and interface oxides (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3440-3443 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction kinetics of Al with Ti22W78 alloys has been investigated under vacuum annealing conditions. In particular, the effects of Cu in Al and venting during deposition of TiW were studied. It was observed that Cu did not play any significant role in the kinetics of the interdiffusion of Al and TiW. During the reaction process at temperatures around 500 °C, Ti accumulated on the surface of the samples with or without Cu in Al. The Ti accumulation is diffusion limited with an activation energy of 2.4 eV. Interface oxides are believed to be primarily responsible for the stability of Al/TiW metallization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335764
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