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  • 1
    Electronic Resource
    Electronic Resource
    Chemical investigations of GaAs wafer bonded interfaces (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5991-5999 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bonding chemistry of various GaAs-to-oxide/GaAs bonded samples was investigated using multiple internal transmission Fourier transform infrared spectroscopy for thermally annealed and thermocompression annealed samples. The oxides used in these investigations included a native GaAs oxide as well as two compositions of borosilicate glass (BSG) deposited by low-pressure chemical vapor deposition (LPCVD). For the thermally annealed samples, the hydrogen-bonded H2O/OH groups on the hydrophilic surface form a room temperature bond without the application of pressure. Chemical changes at the wafer-bonded interface occur in two temperature regions. For anneals between 200 and 400 °C for 1 h in N2, the H2O/OH groups react and evolve H that becomes absorbed within the oxide. The LPCVD BSG oxide was chemically unaltered during anneals in this temperature range, however, the GaAs native oxide underwent chemical modification. Initially, the GaAs oxide consisted of As(III)–O and Ga–O related oxides. The As(III)–O oxides react to form free As and Ga–O during annealing between 200 and 400 °C. For anneals between 500 and 600 °C, the reaction of H2O/OH groups continue and the H becomes infrared inactive, most likely forming H2 voids at the bonded interface. In addition, As(V)–O related oxides were observed during thermal annealing in this temperature range. No detectable chemical changes in the BSG were observed over the temperature range investigated. Samples that were annealed under an estimated 1–10 MPa of pressure had similar chemical changes to thermally annealed samples.© 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1416139
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical characteristics of regrown interfaces using diethylgallium chloride-based metalorganic vapor phase epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2214-2216 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of regrown interfaces deposited using an alternate metalorganic chemistry, diethylgallium chloride (DEGaCl), are investigated. With the appropriate HCl pre-regrowth surface treatment, these interfaces are found to be of very high quality with no substantial interface charge. The contact resistivity, as determined by transmission line measurements, is (2–4)×10−7 Ω cm2 at both 77 and 300 K. Secondary-ion mass spectroscopy measurements show no detectable accumulation of impurities at the regrown interface, in contrast to those regrown using the conventional trimethylgallium-based chemistry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102064
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  • 3
    Electronic Resource
    Electronic Resource
    Planar Ge/Pd and alloyed Au-Ge-Ni ohmic contacts to n-AlxGa1−xAs (0≤x≤0.3) (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 721-723 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Specific contact resistivity ρc of planar Ge/Pd ohmic contacts to n-type AlxGa1−xAs is measured as a function of AlAs mole fraction x and anneal temperature Tann. The functional dependence of ρc on Tann is the same for all x, decreasing to a minimum at 275–325 °C. This indicates that the ohmic contact formation mechanism is independent of x(0≤x≤0.3) as verified by MeV Rutherford backscattering spectrometry and Read camera glancing angle x-ray diffraction. Decomposition of an epitaxial Pd-AlxGa1−xAs phase is correlated with the onset of ohmic behavior and may result in a thin solid phase regrown interfacial AlxGa1−xAs layer. An undoped 20 nm GaAs cap layer reduces ρc by about one order of magnitude. Ge/Pd contacts display greater dependence of ρc on x and much smoother surface morphology compared with those of standard Au-Ge-Ni contacts on AlxGa1−xAs (0≤x≤0.3).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100872
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  • 4
    Electronic Resource
    Electronic Resource
    Schottky enhancement of reacted NiAl/n-GaAs contacts (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3485-3487 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky enhancement of reacted NiAl/n-GaAs contacts was demonstrated experimentally. The Schottky barrier height increases from 0.83 eV for the as-deposited contacts to 0.96 eV when the contacts were annealed at 400 °C for 1 min. Formation of a high Al content (Al,Ga)As layer at the interface upon annealing was rationalized in terms of a thermodynamic/kinetic model. A (200) dark field cross-sectional transmission electron microscopy image was used to show the presence of high Al content (Al,Ga)As at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111248
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  • 5
    Electronic Resource
    Electronic Resource
    Strain-induced band-gap modulation in GaAs/AlGaAs quantum-well structure using thin-film stressors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1763-1771 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of strain-induced band-gap modulation has been studied in a GaAs/AlGaAs multiple-quantum-well structure with the wells located at various depths in the structure. The energy change in the quantum wells was calculated based on simple elasticity theory and measured using photoluminescence on the structure where a thin-film stressor array was deposited. Metallic thin-film stressors were made by conventional thin-film deposition techniques followed by photolithography. It was found that the elasticity theory describes the energy changes reasonably well in comparison with the experimental results. For stressor layers that react with the heterojunction structure, the situation was more complex and requires more detailed analysis. Based on the calculated and experimental results it appears possible to fabricate quantum wire with lateral dimensions of less than 100 nm using thin-film technology and e-beam lithography. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360966
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  • 6
    Electronic Resource
    Electronic Resource
    Changing photoluminescence intensity from GaAs/Al0.3Ga0.7As heterostructures upon chemisorption of SO2 (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1233-1240 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chemisorption of SO2 gas molecules onto photowashed GaAs surfaces results in a change in the density of charge at the surface, giving rise to a measurable change in the charge distribution within the semiconductor. We consider the development of a novel semiconductor chemical sensor based on this phenomenon. The intensity of photoluminescence (PL) from metalorganic vapor phase epitaxy grown GaAs/Al0.3Ga0.7As structures at 300 K is used to detect this change in charge distribution. The doping densities and layer thicknesses within these heterostructures are shown to have a profound influence on the relative magnitude of PL intensity and its sensitivity to changes in the density of surface charge brought about by chemisorption of SO2. New analytical and finite element method (FEM) numerical models are derived to quantitatively predict the effect of changing surface charge on the PL intensity from finite thickness heterostructure layers. The PL response from these heterostructures is shown to follow the trends predicted by these models and suggests that the adsorption of SO2 from a 0.6 mol % mixture of SO2 in N2 results in a reduction in the negative surface charge density by 9×109 to 2×1010 cm−2. Simultaneous changes in surface recombination rates due to adsorption are shown (using the FEM model) to have no effect on the PL intensity from the structures studied here. The results are applied to the improvement of signal characteristics from a potential chemical sensor device. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358924
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  • 7
    Electronic Resource
    Electronic Resource
    Growth studies of erbium-doped GaAs deposited by metalorganic vapor phase epitaxy using novel cyclopentadienyl-based erbium sources (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1585-1591 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Erbium-doped GaAs layers were grown by metalorganic vapor phase epitaxy using two new sources, bis(i-propylcyclopentadienyl)cyclopentadienyl erbium and tris(t-butylcyclopentadienyl) erbium. Controlled Er doping in the range of 1017–1018 cm−3 was achieved using a relatively low source temperature of 90 °C. The doping exhibits a second-order dependence on inlet source partial pressure, similar to behavior obtained with cyclopentadienyl Mg dopant sources. Equivalent amounts of oxygen and Er are present in "as-grown'' films indicating that the majority of Er dopants probably exist as Er-O complexes in the material. Er3+ luminescence at 1.54 μm was measured from the as-grown films, but ion implantation of additional oxygen decreases the emission intensity. Electrical compensation of n-type GaAs layers codoped with Er and Si is directly correlated to the Er concentration. The compensation is proposed to arise from deep centers associated with Er which are responsible for a broad emission band near 0.90 μm present in the photoluminescence spectra of GaAs:Si, Er films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357737
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  • 8
    Electronic Resource
    Electronic Resource
    The effects of temperature and oxygen concentration on the photoluminescence of epitaxial metalorganic vapor-phase epitaxy GaAs:O (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1175-1179 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Semi-insulating epitaxial GaAs:O prepared in a metalorganic vapor-phase epitaxy growth process using DEALO [(C2H5)2AlOC2H5] as the oxygen source has been characterized by temperature-dependent (12–300 K) photoluminescence. Oxygen-related deep level photoluminescence bands were detected at ∼0.8 and ∼1.1 eV. The relative intensities of the two bands were sensitive to both oxygen concentration and temperature. At a given temperature, an increase in oxygen concentration led to an increase in the intensity of the lower energy band relative to the higher energy band. A similar effect occurred at a given oxygen concentration as the temperature was raised. Band edge luminescence was also measured and was observed to quench when the oxygen concentration exceeded ∼1018 cm−3. The results indicate that oxygen is incorporated differently in epitaxial GaAs than in bulk GaAs. We propose that the difference is due to the incorporation of Al when DEALO is used in the growth of epitaxial GaAs:O. We suggest equally plausible microscopic models, based on the number of nearest-neighbor Al associated with O and multiple charge states, to explain the properties of the oxygen-related photoluminescence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357842
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  • 9
    Electronic Resource
    Electronic Resource
    Selective epitaxy in the conventional metalorganic vapor phase epitaxy of GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 910-912 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The selective epitaxy of GaAs was demonstrated in the metalorganic vapor phase epitaxy of GaAs utilizing diethylgallium chloride [Ga(C2H5)2Cl] and AsH3. No GaAs will deposit on SiO2, Si3N4, or SiONx under normal growth conditions, i.e., 600–800 °C at 0.1 atm reactor pressure. Unlike other forms of selective epitaxy, there is no enhanced growth rate at the edge of the selectively grown regions. The selectivity is a result of the reduced adsorption of the growth precursor, probably GaCl, on the masking material relative to the exposed GaAs areas. Similar selectivity should be possible for Al and In containing semiconductors using an analogous growth chemistry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100805
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  • 10
    Electronic Resource
    Electronic Resource
    Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1317-1319 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The controlled incorporation of carbon has been demonstrated for the metalorganic vapor phase epitaxy of GaAs. Carbon levels between 1016 and 1019 cm−3 can be achieved under typical growth conditions by using Ga(CH3)3 and either As(CH3)3 or mixtures of As(CH3)3 and AsH3. The carbon incorporation into GaAs goes through a minimum with growth temperature at ∼650 °C when using Ga(CH3)3 and As(CH3)3. The controlled addition of AsH3 monotonically decreases the carbon incorporation. The high carbon levels ((approximately-greater-than)1–2×1019 cm−3), greater than the reported solid solubility, are thermally stable with a low diffusion coefficient. The GaAs:C layers exhibit a low deep level concentration, ∼1013 cm−3, with only a single midgap trap present.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100008
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