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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 25 (1969), S. 676-682 
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Spectroscopically pure Cu has a lattice parameter a25 = 3.61491 Å (corrected for refraction), and a thermal expansion coefficient α = 14.87 × 10−6°C−1 between 15 and 55°C. The measured density d25 is 8.9314 ± 0.0002 g.cm−3 in agreement with the calculated value dx = 8.9316. In the α solid solution region additions of In increase the lattice parameter of Cu according to ax = 3.6149 + 0.0091x up to x = 10.4 (x = atomic % In, balance Cu). The thermal expansion coefficients between 15 and 65°C of the homogeneous alloys increase from 14.87 (pure Cu) to 17.2 × 10−6°C−1 at the solid solubility limit (10.4 atomic % In, quenched from 650°C). With the increase of In content the experimental densities become increasingly lower than the calculated ones because of void formation. Upon cold rolling the voids close and the differences disappear. The α phase represents a substitutional solid solution without structural defects. Alloys quenched from the liquid state do not show any microporosity; the voids appear after homogenization at 800°C. Micropore formation is explained by differential shrinkage of the various crystalline fractions formed during solidification, giving rise to internal stresses in the solid alloy. Relief of stresses results in vacancies or micropores, which coalesce into voids upon heat treatment.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 721-723 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Specific contact resistivity ρc of planar Ge/Pd ohmic contacts to n-type AlxGa1−xAs is measured as a function of AlAs mole fraction x and anneal temperature Tann. The functional dependence of ρc on Tann is the same for all x, decreasing to a minimum at 275–325 °C. This indicates that the ohmic contact formation mechanism is independent of x(0≤x≤0.3) as verified by MeV Rutherford backscattering spectrometry and Read camera glancing angle x-ray diffraction. Decomposition of an epitaxial Pd-AlxGa1−xAs phase is correlated with the onset of ohmic behavior and may result in a thin solid phase regrown interfacial AlxGa1−xAs layer. An undoped 20 nm GaAs cap layer reduces ρc by about one order of magnitude. Ge/Pd contacts display greater dependence of ρc on x and much smoother surface morphology compared with those of standard Au-Ge-Ni contacts on AlxGa1−xAs (0≤x≤0.3).
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1880-1882 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method for enhancing effective Schottky barrier heights in III–V nitride heterostructures based on the piezoelectric effect is proposed, demonstrated, and analyzed. Two-layer GaN/AlxGa1−xN barriers within heterostructure field-effect transistor epitaxial layer structures are shown to possess significantly larger effective barrier heights than those for AlxGa1−xN, and the influence of composition, doping, and layer thicknesses is assessed. A GaN/Al0.25Ga0.75N barrier structure optimized for heterojunction field-effect transistors is shown to yield a barrier height enhancement of 0.37 V over that for Al0.25Ga0.75N. Corresponding reductions in forward-bias current and reverse-bias leakage are observed in current–voltage measurements performed on Schottky diodes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 536-538 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The critical role of the optical source spectral linewidth in semiconductor low loss waveguide measurements using the Fabry–Perot resonance method is analyzed. For 5-mm-long GaAs/AlGaAs waveguides with losses in the 1 dB/cm range, a frequency stabilized single mode laser with a linewidth of less than 0.01 A(ring) is required to obtain a loss value accurate to within 5%.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 238-240 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of Ni and Ti Schottky barriers on n-Al0.15Ga0.85N on SiC were investigated. We report that the barrier height for Ni on n-Al0.15Ga0.85N was about 1.26 eV and about 1 eV or less for Ti. These barrier heights are about 0.3–0.4 eV larger than those for Ni and Ti on n-GaN, which are in good agreement with Schottky model predictions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1763-1771 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of strain-induced band-gap modulation has been studied in a GaAs/AlGaAs multiple-quantum-well structure with the wells located at various depths in the structure. The energy change in the quantum wells was calculated based on simple elasticity theory and measured using photoluminescence on the structure where a thin-film stressor array was deposited. Metallic thin-film stressors were made by conventional thin-film deposition techniques followed by photolithography. It was found that the elasticity theory describes the energy changes reasonably well in comparison with the experimental results. For stressor layers that react with the heterojunction structure, the situation was more complex and requires more detailed analysis. Based on the calculated and experimental results it appears possible to fabricate quantum wire with lateral dimensions of less than 100 nm using thin-film technology and e-beam lithography. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Efficient 1.3 and 1.55 μm InP-based electroabsorption waveguide modulators with planar device structures have been demonstrated. Elevated temperature oxygen ion implantation and/or the photoelastic effect induced by W metal stressor stripes deposited on the semiconductor surface have been used to produce these self-aligned planar guided-wave devices. The oxygen ion mixing process has been used to simultaneously achieve compositional disordering and electrical isolation of superlattice material while the photoelastic effect has been used to improve the lateral mode confinement. A 1.3 μm Franz–Keldysh modulator with a (approximately-greater-than)10 dB extinction ratio at 2 V and a 1.55 μm device with a (approximately-greater-than)10 dB extinction ratio at 7 V are reported. These single growth step planar processing techniques have also been used to fabricate relatively low-loss (〈4 dB/cm) double heterostructure InGaAs(P)/InP single-mode optical waveguides which demonstrate their usefulness in developing InP-based photonic integrated circuits.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the use of thin film technology to introduce controllable and thermally stable stress into semiconductor heterostructures. Two simple schemes are used. The first scheme is to use interfacial reactions between a metal and the substrate, such as Ni, Co, Pd, and Pt on GaAs/AlGaAs. The induced stress in the structure is reproducible and controllable because the volumetric change for a given reaction is fixed, as long as the deposited film is fully reacted to form a compound. The stability of the stress depends on the stability of the compound. In the case of Ni and Co on GaAs/AlGaAs, the induced stress is thermally stable up to 600 °C. Evaporated films and reacted films are usually under tension. The second scheme is to use rf sputtered W or WNi alloy films where W or WNi is sputtered onto a negative dc biased substrate. This scheme effectively provides highly compressed films. The thermal stability depends on the concentration of Ni in the WNi alloy. Using the two schemes above, we have fabricated low-loss (∼1 dB/cm at 1.52 μm wavelength) photoelastic waveguides in GaAs/AlGaAs heterostructures, and explored the interrelationship between the photoelastic waveguide characteristics and the stress. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1621-1625 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the contact resistance of the Ge/Pd and Si/Pd metalization scheme on n-GaAs was investigated. These two contact systems are based on solid-phase reactions, thus leading to nonspiking ohmic contacts to n-GaAs. The experimental results show that the ohmic behavior is likely due to both a highly doped surface n+ region and/or a small barrier at the interface. The origin of this small barrier and nonlinear current-voltage characteristics for certain samples are also discussed.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2696-2699 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A photoconductance method was used to determine the band-gap energy and, therefore, the Al mole fraction of bulk AlxGa1−xN and AlxGa1−xN/GaN heterostructures. The results are compared with those obtained by a more elaborate photoluminescence method. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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