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  • 1
    Electronic Resource
    Electronic Resource
    Simultaneous disordering and isolation induced by ion mixing in InGaAs/InP superlattice structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1306-1311 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phenomenon of simultaneous compositional disordering and the formation of electrical resistive layers induced by oxygen implantation in InGaAs/InP superlattices has been investigated. The disordering characteristics have been studied as a function of implantation temperature and ion dose. It was found that implantation at elevated temperatures (referred to as the IM or ion mixing process) usually leads to much more efficient disordering compared to implantation at room temperature followed by annealing at the same elevated temperature (referred to as the implantation plus annealing process). Of particular interest is the observation that ion mixing at 550 °C with 1×1013 O+/cm2 leads to significantly more disordering than implantation with the same dose at room temperature followed by annealing at 550 °C for the same period of ion mixing time. In addition, the electrical resistance of the ion-mixed layer at 550 °C increases 2600 times for the p-type InGaAs/InP superlattice structure, whereas the sample implanted at room temperature and annealed at 550 °C showed only a 20 times increase in electrical resistance. These results indicate a distinct advantage for the IM process in achieving simultaneous compositional disordering and electrical isolation for optoelectronic applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351737
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  • 2
    Electronic Resource
    Electronic Resource
    InGaAs/InP superlattice waveguides by elevated temperature argon ion mixing (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2020-2022 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical waveguides fabricated by argon ion mixing in InGaAs/InP superlattice structures grown by low-pressure metalorganic chemical vapor deposition are demonstrated for the first time. Implantation of argon ions at ∼400 °C eliminates the need for a high-temperature post-anneal to induce the compositional disordering. As-grown and argon-implanted samples were studied using x-ray diffraction and optical absorption measurements. Planar buried rib waveguides operating at a 1.5 μm wavelength are fabricated by selective ion implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102150
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  • 3
    Electronic Resource
    Electronic Resource
    Chirping of electroabsorption modulation in InGaAsP (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1100-1102 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oscillatory behaviors in the electroabsorption (EA) spectra around the fundamental edge of InGaAsP are measured for the first time. Chirping of EA modulation is obtained from these EA spectra and the corresponding electrorefraction spectra calculated from the Kramers–Kronig transform. This result is applied to the selection of material band gap for applications of laser light modulation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101669
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  • 4
    Electronic Resource
    Electronic Resource
    Laser spectral linewidth dependence on waveguide loss measurements using the Fabry–Perot method (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 536-538 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The critical role of the optical source spectral linewidth in semiconductor low loss waveguide measurements using the Fabry–Perot resonance method is analyzed. For 5-mm-long GaAs/AlGaAs waveguides with losses in the 1 dB/cm range, a frequency stabilized single mode laser with a linewidth of less than 0.01 A(ring) is required to obtain a loss value accurate to within 5%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111095
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  • 5
    Electronic Resource
    Electronic Resource
    Planar 1.3 and 1.55 μm InGaAs(P)/InP electroabsorption waveguide modulators using oxygen ion mixing and the photoelastic effect (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4352-4361 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Efficient 1.3 and 1.55 μm InP-based electroabsorption waveguide modulators with planar device structures have been demonstrated. Elevated temperature oxygen ion implantation and/or the photoelastic effect induced by W metal stressor stripes deposited on the semiconductor surface have been used to produce these self-aligned planar guided-wave devices. The oxygen ion mixing process has been used to simultaneously achieve compositional disordering and electrical isolation of superlattice material while the photoelastic effect has been used to improve the lateral mode confinement. A 1.3 μm Franz–Keldysh modulator with a (approximately-greater-than)10 dB extinction ratio at 2 V and a 1.55 μm device with a (approximately-greater-than)10 dB extinction ratio at 7 V are reported. These single growth step planar processing techniques have also been used to fabricate relatively low-loss (〈4 dB/cm) double heterostructure InGaAs(P)/InP single-mode optical waveguides which demonstrate their usefulness in developing InP-based photonic integrated circuits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355978
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  • 6
    Electronic Resource
    Electronic Resource
    Semiconductor waveguide phase comparator (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1297-1298 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A phase comparator based on two cascaded semiconductor electroabsorption waveguide modulators is demonstrated for the first time. The operation principle of this device is derived and experimentally confirmed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100002
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  • 7
    Electronic Resource
    Electronic Resource
    Photoelastic waveguides and the controlled introduction of strain in III-V semiconductors by means of thin film technology (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 236-244 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the use of thin film technology to introduce controllable and thermally stable stress into semiconductor heterostructures. Two simple schemes are used. The first scheme is to use interfacial reactions between a metal and the substrate, such as Ni, Co, Pd, and Pt on GaAs/AlGaAs. The induced stress in the structure is reproducible and controllable because the volumetric change for a given reaction is fixed, as long as the deposited film is fully reacted to form a compound. The stability of the stress depends on the stability of the compound. In the case of Ni and Co on GaAs/AlGaAs, the induced stress is thermally stable up to 600 °C. Evaporated films and reacted films are usually under tension. The second scheme is to use rf sputtered W or WNi alloy films where W or WNi is sputtered onto a negative dc biased substrate. This scheme effectively provides highly compressed films. The thermal stability depends on the concentration of Ni in the WNi alloy. Using the two schemes above, we have fabricated low-loss (∼1 dB/cm at 1.52 μm wavelength) photoelastic waveguides in GaAs/AlGaAs heterostructures, and explored the interrelationship between the photoelastic waveguide characteristics and the stress. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360657
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  • 8
    Electronic Resource
    Electronic Resource
    Ion mixing of III-V compound semiconductor layered structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2602-2610 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compositional disordering of III-V compound superlattice structures has received considerable attention recently due to its potential application for photonic devices. The conventional method to induce compositional disorder in a layered structure is to implant a moderate dose of impurity ions (∼1015/cm2) into the structure at room temperature, followed by a high-temperature annealing step (this process is referred to as IA here). Ion irradiation at room temperature alone does not cause any significant intermixing of layers. The subsequent high-temperature annealing step tends to restrict device processing flexibility. Ion mixing (IM) is capable of enhancing compositional disordering of layers at a rate which increases exponentially with the ion irradiation temperature. As a processing technique to planarize devices, ion mixing appears to be an attractive technology. In this work, we investigate compositional disordering in the AlGaAs/GaAs and the InGaAs/InP systems using ion mixing. We found that the ion mixing behavior of these two systems shows a thermally activated regime as well as an athermal regime, similar to that observed for metal-metal and metal-semiconductor systems. Ion mixing is observed to induce compositional disordering at significantly lower temperatures than that for the IA process. We have compared the two processes in terms of five parameters: (1) irradiation temperature, (2) dose dependence, (3) dose rate dependence, (4) annealing, and (5) ion dependence (including electrical effects and mass dependence). We found that the IM process is more efficient in utilizing the defects generated by ion irradiation to cause disordering. Both the physical mechanism of ion mixing and possible device implications will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351079
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  • 9
    Electronic Resource
    Electronic Resource
    Light-activated silicon diode switches (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 930-933 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental study of the fundamental limits to current density, power, and speed of light-activated semiconductor switches (LASS) is described. The LASS investigated are high-voltage silicon junction devices illuminated with 1.06-μm laser light. A novel optical delay line is designed in sampling the laser pulses. Experimental results to date demonstrated a switch power of 6.7 MW, a peak electrical pulse power of 4.8 kW, a current density of 150 kA/cm2, a power density of 5.3 GW/cm3, and an electrical pulse rise time of 100 ps. The results of theoretical analysis indicate that the circuit configuration is the main limitation to the pulse rise time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340035
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  • 10
    Electronic Resource
    Electronic Resource
    Wafer-fused p-i-n InGaAs/Si photodiode with photogain (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 970-972 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using high temperature fusion of InGaAs/InP on Si, we demonstrated an InGaAs/Si p-i-n photodiode with a photomultiplication gain of 11 at relatively low bias of −15 V. The photodiode exhibited a dark current of 30 nA at −5 V, and a responsivity of 0.3 A/W at 1.32 μm wavelength without antireflection coating. The measured device behavior were consistent with that predicted by a model of charged interface states resulting from the fusion. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1394171
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