ISSN:
1432-0630
Keywords:
42.80 Lt
;
66.30 Jt
;
79.20 Nc
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract A technique has been developed for dopant concentration depth profiling using static Secondary Ion Mass Spectrometry (SIMS), and an ex-situ ion milling facility to produce “tapers” through the region of interest of an optical waveguide sample. Results have been obtained for titanium-diffused optical waveguides in lithium niobate and for potassium and caesium ion-exchanged glass waveguides. The SIMS profiles have been compared with refractive index profiles in multimode structures. The refractive index profiles have been obtained from the waveguide mode spectra by a piecewise linear Wentzel-Kramers-Brillouin (WKB) method. The two profiles are in close agreement. Use of the SIMS technique for single mode Ti∶LiNbO3 waveguides has revealed significant changes in the forms of the profiles, compared with deeper structures, and we suggest a mechanism to account for these changes.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00617185
Permalink
